Zinc-blende and wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy

S. V. Novikov; C. R. Staddon; F. Luckert; P. R. Edwards; R. W. Martin; A. J. Kent; C. T. Foxon

doi:10.1016/j.jcrysgro.2011.12.028

Zinc-blende and wurtzite Al_xGa_1-xN bulk crystals grown by molecular beam epitaxy

S. V. Novikov, C. R. Staddon, F. Luckert, P. R. Edwards, R. W. Martin, A. J. Kent, C. T. Foxon

Research output: Contribution to journal › Article › peer-review

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Abstract

There is a significant difference in the lattice parameters of GaN and AlN and for many device applications AlxGa1-xN substrates would be preferable to either GaN or AlN. We have studied the growth of free-standing zinc-blende and wurtzite AlxGa1-xN bulk crystals by plasma-assisted molecular beam epitaxy (PA-MBE). Thick (similar to 10 mu m) zinc-blende and wurtzite AlxGa1-xN films were grown by PA-MBE on 2-in. GaAs (0 0 1) and GaAs (1 1 1)B substrates respectively and were removed from the GaAs substrate after the growth. We demonstrate that free-standing zinc-blende and wurtzite AlxGa1-xN wafers can be achieved by PA-MBE for a wide range of Al compositions. (C) 2011 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	80-84
Number of pages	5
Journal	Journal of Crystal Growth
Volume	350
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2011.12.028
Publication status	Published - 1 Jul 2012

Keywords

zinc-blende
AlxGa1-xN
wurtzite
bulk crystals
molecular beam epitaxy
substrates
semiconducting III-V materials
nitrides

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10.1016/j.jcrysgro.2011.12.028

JCG 350 80 Novikov Zb W AlGaNFinal published version, 264 KBLicence: Unspecified

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@article{447ba95d14d7457292a59c6e97d8e10d,

title = "Zinc-blende and wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy",

abstract = "There is a significant difference in the lattice parameters of GaN and AlN and for many device applications AlxGa1-xN substrates would be preferable to either GaN or AlN. We have studied the growth of free-standing zinc-blende and wurtzite AlxGa1-xN bulk crystals by plasma-assisted molecular beam epitaxy (PA-MBE). Thick (similar to 10 mu m) zinc-blende and wurtzite AlxGa1-xN films were grown by PA-MBE on 2-in. GaAs (0 0 1) and GaAs (1 1 1)B substrates respectively and were removed from the GaAs substrate after the growth. We demonstrate that free-standing zinc-blende and wurtzite AlxGa1-xN wafers can be achieved by PA-MBE for a wide range of Al compositions. (C) 2011 Elsevier B.V. All rights reserved.",

keywords = "zinc-blende , AlxGa1-xN, wurtzite , bulk crystals , molecular beam epitaxy , substrates , semiconducting III-V materials, nitrides",

author = "Novikov, {S. V.} and Staddon, {C. R.} and F. Luckert and Edwards, {P. R.} and Martin, {R. W.} and Kent, {A. J.} and Foxon, {C. T.}",

year = "2012",

month = jul,

day = "1",

doi = "10.1016/j.jcrysgro.2011.12.028",

language = "English",

volume = "350",

pages = "80--84",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

number = "1",

}

TY - JOUR

T1 - Zinc-blende and wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy

AU - Novikov, S. V.

AU - Staddon, C. R.

AU - Luckert, F.

AU - Edwards, P. R.

AU - Martin, R. W.

AU - Kent, A. J.

AU - Foxon, C. T.

PY - 2012/7/1

Y1 - 2012/7/1

N2 - There is a significant difference in the lattice parameters of GaN and AlN and for many device applications AlxGa1-xN substrates would be preferable to either GaN or AlN. We have studied the growth of free-standing zinc-blende and wurtzite AlxGa1-xN bulk crystals by plasma-assisted molecular beam epitaxy (PA-MBE). Thick (similar to 10 mu m) zinc-blende and wurtzite AlxGa1-xN films were grown by PA-MBE on 2-in. GaAs (0 0 1) and GaAs (1 1 1)B substrates respectively and were removed from the GaAs substrate after the growth. We demonstrate that free-standing zinc-blende and wurtzite AlxGa1-xN wafers can be achieved by PA-MBE for a wide range of Al compositions. (C) 2011 Elsevier B.V. All rights reserved.

AB - There is a significant difference in the lattice parameters of GaN and AlN and for many device applications AlxGa1-xN substrates would be preferable to either GaN or AlN. We have studied the growth of free-standing zinc-blende and wurtzite AlxGa1-xN bulk crystals by plasma-assisted molecular beam epitaxy (PA-MBE). Thick (similar to 10 mu m) zinc-blende and wurtzite AlxGa1-xN films were grown by PA-MBE on 2-in. GaAs (0 0 1) and GaAs (1 1 1)B substrates respectively and were removed from the GaAs substrate after the growth. We demonstrate that free-standing zinc-blende and wurtzite AlxGa1-xN wafers can be achieved by PA-MBE for a wide range of Al compositions. (C) 2011 Elsevier B.V. All rights reserved.

KW - zinc-blende

KW - AlxGa1-xN

KW - wurtzite

KW - bulk crystals

KW - molecular beam epitaxy

KW - substrates

KW - semiconducting III-V materials

KW - nitrides

UR - http://www.scopus.com/inward/record.url?scp=84861591791&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2011.12.028

DO - 10.1016/j.jcrysgro.2011.12.028

M3 - Article

SN - 0022-0248

VL - 350

SP - 80

EP - 84

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

Zinc-blende and wurtzite Al_xGa_1-xN bulk crystals grown by molecular beam epitaxy

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Keywords

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