Zinc-blende and wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy

S. V. Novikov, C. R. Staddon, F. Luckert, P. R. Edwards, R. W. Martin, A. J. Kent, C. T. Foxon

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Abstract

There is a significant difference in the lattice parameters of GaN and AlN and for many device applications AlxGa1-xN substrates would be preferable to either GaN or AlN. We have studied the growth of free-standing zinc-blende and wurtzite AlxGa1-xN bulk crystals by plasma-assisted molecular beam epitaxy (PA-MBE). Thick (similar to 10 mu m) zinc-blende and wurtzite AlxGa1-xN films were grown by PA-MBE on 2-in. GaAs (0 0 1) and GaAs (1 1 1)B substrates respectively and were removed from the GaAs substrate after the growth. We demonstrate that free-standing zinc-blende and wurtzite AlxGa1-xN wafers can be achieved by PA-MBE for a wide range of Al compositions. (C) 2011 Elsevier B.V. All rights reserved.

Original languageEnglish
Pages (from-to)80-84
Number of pages5
JournalJournal of Crystal Growth
Volume350
Issue number1
DOIs
Publication statusPublished - 1 Jul 2012

Keywords

  • zinc-blende
  • AlxGa1-xN
  • wurtzite
  • bulk crystals
  • molecular beam epitaxy
  • substrates
  • semiconducting III-V materials
  • nitrides

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