Zeeman splittings of the 5D0–7F2 transitions of Eu3+ ions implanted into GaN

V. Kachkanov, K. P. O'Donnell, C. Rice, D. Wolverson, R. W. Martin, K. Lorenz, E. Alves, M. Bockowski

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)
191 Downloads (Pure)

Abstract

We report the magnetic field splittings of emission lines assigned to the 5D0–7F2 transitions of Eu3+ centres in GaN. The application of a magnetic field in the c-axis direction (B||c) leads to a splitting of the major lines at 621 nm, 622 nm and 622.8 nm into two components. The Zeeman splitting is linear with magnetic field up to 5 Tesla for each line. In contrast, a magnetic field applied in the growth plane (B┴c) does not influence the photoluminescence spectra. The estimated g-factors vary slightly from sample to sample with mean values of g|| ~2.8, ~1.5 and ~2.0 for the emission lines at 621 nm, 622 nm and 622.8 nm respectively.
Original languageEnglish
Number of pages5
JournalMRS Online Proceedings Library
Volume1290
Early online date2 Mar 2011
DOIs
Publication statusPublished - 2011

Keywords

  • Eu
  • ion-implantation
  • nitride
  • TIC - Bionanotechnology

Fingerprint

Dive into the research topics of 'Zeeman splittings of the 5D0–7F2 transitions of Eu3+ ions implanted into GaN'. Together they form a unique fingerprint.

Cite this