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Abstract
While the use of electron probe microanalysis (EPMA) is widespread in the geological and metallurgical sciences, it remains less prevalent in the field of semiconductor research. For these materials, trace element (i.e. dopant) levels typically lie near or beneath the detection limit of wavelength-dispersive Xray (WDX) spectrometers, while alloy compositions of ternary mixtures and multilayer structures can more readily be determined using X-ray diffraction techniques. The electron beam measurements more commonly applied to semiconductors remain transmission electron microscopy (for structural characterization), and scanning electron microscopy (topographic, optical and electrical information).
Despite this, there are many aspects of the EPMA that make it an attractive platform for all of thesetypes of semiconductor characterization, particularly when combining compositional information fromWDX with complementary and simultaneously-acquired signals. These advantages include: built-inlight optics; a stable, quantified and high-current beam; and a combined large-area and high-resolutionmapping capability. This allows the measurement of cathodoluminescence (CL), electron beam-inducedcurrent (EBIC) and electron channelling contrast imaging (ECCI) signals alongside WDX, which weapply to the investigation of visible and UV AlxInyGa1-x-yN materials, devices and nanostructures.
Despite this, there are many aspects of the EPMA that make it an attractive platform for all of thesetypes of semiconductor characterization, particularly when combining compositional information fromWDX with complementary and simultaneously-acquired signals. These advantages include: built-inlight optics; a stable, quantified and high-current beam; and a combined large-area and high-resolutionmapping capability. This allows the measurement of cathodoluminescence (CL), electron beam-inducedcurrent (EBIC) and electron channelling contrast imaging (ECCI) signals alongside WDX, which weapply to the investigation of visible and UV AlxInyGa1-x-yN materials, devices and nanostructures.
Original language | English |
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Pages (from-to) | 2026-2027 |
Number of pages | 2 |
Journal | Microscopy and Microanalysis |
Volume | 24 |
Issue number | S1 |
Early online date | 1 Aug 2018 |
DOIs | |
Publication status | Published - 1 Aug 2018 |
Event | Microscopy & Microanalysis 2018 - Baltimore, United States Duration: 5 Aug 2018 → 9 Aug 2018 |
Keywords
- electron probe microanalysis
- EPMA
- electron beam
- electron microscopy
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Dive into the research topics of 'You do what in your microprobe?! The EPMA as a multimode platform for nitride semiconductor characterization'. Together they form a unique fingerprint.Projects
- 3 Finished
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Light-controlled manufacturing of semiconductor structures: a platform for next generation processing of photonic devices
Martin, R., Dawson, M., Edwards, P., Skabara, P. & Watson, I.
EPSRC (Engineering and Physical Sciences Research Council)
1/07/17 → 31/07/22
Project: Research
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Quantitative non-destructive nanoscale characterisation of advanced materials
Hourahine, B., Edwards, P., Roper, M., Trager-Cowan, C. & Gunasekar, N.
EPSRC (Engineering and Physical Sciences Research Council)
1/06/17 → 30/11/21
Project: Research
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Manufacturing of nano-engineered III-nitride semiconductors
EPSRC (Engineering and Physical Sciences Research Council)
1/05/15 → 30/09/21
Project: Research