You do what in your microprobe?! The EPMA as a multimode platform for nitride semiconductor characterization

Research output: Contribution to journalConference Contribution

Abstract

While the use of electron probe microanalysis (EPMA) is widespread in the geological and metallurgical sciences, it remains less prevalent in the field of semiconductor research. For these materials, trace element (i.e. dopant) levels typically lie near or beneath the detection limit of wavelength-dispersive Xray (WDX) spectrometers, while alloy compositions of ternary mixtures and multilayer structures can more readily be determined using X-ray diffraction techniques. The electron beam measurements more commonly applied to semiconductors remain transmission electron microscopy (for structural characterization), and scanning electron microscopy (topographic, optical and electrical information).

Despite this, there are many aspects of the EPMA that make it an attractive platform for all of thesetypes of semiconductor characterization, particularly when combining compositional information fromWDX with complementary and simultaneously-acquired signals. These advantages include: built-inlight optics; a stable, quantified and high-current beam; and a combined large-area and high-resolutionmapping capability. This allows the measurement of cathodoluminescence (CL), electron beam-inducedcurrent (EBIC) and electron channelling contrast imaging (ECCI) signals alongside WDX, which weapply to the investigation of visible and UV AlxInyGa1-x-yN materials, devices and nanostructures. 
LanguageEnglish
Pages2026-2027
Number of pages2
JournalMicroscopy and Microanalysis
Volume24
Issue numberS1
Early online date1 Aug 2018
DOIs
StateE-pub ahead of print - 1 Aug 2018
EventMicroscopy & Microanalysis 2018 - Baltimore, United States
Duration: 5 Aug 20189 Aug 2018

Fingerprint

Electron probe microanalysis
electron probes
microanalysis
Nitrides
nitrides
platforms
Semiconductor materials
Electron beams
electron beams
Wavelength
Cathodoluminescence
cathodoluminescence
Trace elements
trace elements
wavelengths
laminates
high current
Spectrometers
Nanostructures
Optics

Keywords

  • electron probe microanalysis
  • EPMA
  • electron beam
  • electron microscopy

Cite this

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title = "You do what in your microprobe?! The EPMA as a multimode platform for nitride semiconductor characterization",
abstract = "While the use of electron probe microanalysis (EPMA) is widespread in the geological and metallurgical sciences, it remains less prevalent in the field of semiconductor research. For these materials, trace element (i.e. dopant) levels typically lie near or beneath the detection limit of wavelength-dispersive Xray (WDX) spectrometers, while alloy compositions of ternary mixtures and multilayer structures can more readily be determined using X-ray diffraction techniques. The electron beam measurements more commonly applied to semiconductors remain transmission electron microscopy (for structural characterization), and scanning electron microscopy (topographic, optical and electrical information). Despite this, there are many aspects of the EPMA that make it an attractive platform for all of thesetypes of semiconductor characterization, particularly when combining compositional information fromWDX with complementary and simultaneously-acquired signals. These advantages include: built-inlight optics; a stable, quantified and high-current beam; and a combined large-area and high-resolutionmapping capability. This allows the measurement of cathodoluminescence (CL), electron beam-inducedcurrent (EBIC) and electron channelling contrast imaging (ECCI) signals alongside WDX, which weapply to the investigation of visible and UV AlxInyGa1-x-yN materials, devices and nanostructures. ",
keywords = "electron probe microanalysis, EPMA, electron beam, electron microscopy",
author = "Edwards, {Paul R.} and G. Naresh-Kumar and Gunnar Kusch and Jochen Bruckbauer and Lucia Spasevski and Brasser, {Catherine G.} and Wallace, {Michael J.} and Carol Trager-Cowan and Martin, {Robert W.}",
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TY - JOUR

T1 - You do what in your microprobe?! The EPMA as a multimode platform for nitride semiconductor characterization

AU - Edwards,Paul R.

AU - Naresh-Kumar,G.

AU - Kusch,Gunnar

AU - Bruckbauer,Jochen

AU - Spasevski,Lucia

AU - Brasser,Catherine G.

AU - Wallace,Michael J.

AU - Trager-Cowan,Carol

AU - Martin,Robert W.

PY - 2018/8/1

Y1 - 2018/8/1

N2 - While the use of electron probe microanalysis (EPMA) is widespread in the geological and metallurgical sciences, it remains less prevalent in the field of semiconductor research. For these materials, trace element (i.e. dopant) levels typically lie near or beneath the detection limit of wavelength-dispersive Xray (WDX) spectrometers, while alloy compositions of ternary mixtures and multilayer structures can more readily be determined using X-ray diffraction techniques. The electron beam measurements more commonly applied to semiconductors remain transmission electron microscopy (for structural characterization), and scanning electron microscopy (topographic, optical and electrical information). Despite this, there are many aspects of the EPMA that make it an attractive platform for all of thesetypes of semiconductor characterization, particularly when combining compositional information fromWDX with complementary and simultaneously-acquired signals. These advantages include: built-inlight optics; a stable, quantified and high-current beam; and a combined large-area and high-resolutionmapping capability. This allows the measurement of cathodoluminescence (CL), electron beam-inducedcurrent (EBIC) and electron channelling contrast imaging (ECCI) signals alongside WDX, which weapply to the investigation of visible and UV AlxInyGa1-x-yN materials, devices and nanostructures. 

AB - While the use of electron probe microanalysis (EPMA) is widespread in the geological and metallurgical sciences, it remains less prevalent in the field of semiconductor research. For these materials, trace element (i.e. dopant) levels typically lie near or beneath the detection limit of wavelength-dispersive Xray (WDX) spectrometers, while alloy compositions of ternary mixtures and multilayer structures can more readily be determined using X-ray diffraction techniques. The electron beam measurements more commonly applied to semiconductors remain transmission electron microscopy (for structural characterization), and scanning electron microscopy (topographic, optical and electrical information). Despite this, there are many aspects of the EPMA that make it an attractive platform for all of thesetypes of semiconductor characterization, particularly when combining compositional information fromWDX with complementary and simultaneously-acquired signals. These advantages include: built-inlight optics; a stable, quantified and high-current beam; and a combined large-area and high-resolutionmapping capability. This allows the measurement of cathodoluminescence (CL), electron beam-inducedcurrent (EBIC) and electron channelling contrast imaging (ECCI) signals alongside WDX, which weapply to the investigation of visible and UV AlxInyGa1-x-yN materials, devices and nanostructures. 

KW - electron probe microanalysis

KW - EPMA

KW - electron beam

KW - electron microscopy

UR - https://www.cambridge.org/core/journals/microscopy-and-microanalysis

U2 - 10.1017/S1431927618010619

DO - 10.1017/S1431927618010619

M3 - Conference Contribution

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JO - Microscopy and Microanalysis

T2 - Microscopy and Microanalysis

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ER -