X-ray excited optical luminescence studies of InGaN and rare-earth doped GaN epilayers

V. Katchkanov; J. F.W. Mosselmans; K. P. O'Donnell; N. R.J. Poolton; S. Hernandez

doi:10.1557/PROC-831-E3.31

X-ray excited optical luminescence studies of InGaN and rare-earth doped GaN epilayers

V. Katchkanov^*, J. F.W. Mosselmans, K. P. O'Donnell, N. R.J. Poolton, S. Hernandez

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

A successful attempt to use X-ray Excited Optical Luminescence (XEOL) for the detection of Extended X-ray Absorption Fine Structure (EXAFS) in III-nitrides is reported. The samples studied were InGaN and rare-earth (RE) doped GaN epilayers. For the first time Ga K-edge EXAFS oscillations were measured by monitoring the well-known "yellow" emission of GaN at 560 nm. The analysis of Optically Detected (OD) EXAFS data confirmed the expected local structure for Ga in GaN. The intensity oscillation of the 'yellow' band when X-ray energy was scanned across the Ga K-edge indicates that core excitation of Ga atom has a high probability of transfer to defects responsible for 'yellow' emission.

Original language	English
Article number	E3.31
Pages (from-to)	209-213
Number of pages	5
Journal	Materials Research Society Symposium Proceedings
Volume	831
DOIs	https://doi.org/10.1557/PROC-831-E3.31
Publication status	Published - 25 Aug 2005
Event	2004 MRS Fall Meeting - Boston, MA, United States Duration: 29 Nov 2004 → 3 Dec 2004

Keywords

x-ray xcited optical luminescence (XEOL)
extended x-ray absorption fine structure (EXAFS)
InGaN

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title = "X-ray excited optical luminescence studies of InGaN and rare-earth doped GaN epilayers",

abstract = "A successful attempt to use X-ray Excited Optical Luminescence (XEOL) for the detection of Extended X-ray Absorption Fine Structure (EXAFS) in III-nitrides is reported. The samples studied were InGaN and rare-earth (RE) doped GaN epilayers. For the first time Ga K-edge EXAFS oscillations were measured by monitoring the well-known {"}yellow{"} emission of GaN at 560 nm. The analysis of Optically Detected (OD) EXAFS data confirmed the expected local structure for Ga in GaN. The intensity oscillation of the 'yellow' band when X-ray energy was scanned across the Ga K-edge indicates that core excitation of Ga atom has a high probability of transfer to defects responsible for 'yellow' emission.",

keywords = "x-ray xcited optical luminescence (XEOL), extended x-ray absorption fine structure (EXAFS), InGaN",

author = "V. Katchkanov and Mosselmans, {J. F.W.} and O'Donnell, {K. P.} and Poolton, {N. R.J.} and S. Hernandez",

year = "2005",

month = aug,

day = "25",

doi = "10.1557/PROC-831-E3.31",

language = "English",

volume = "831",

pages = "209--213",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Cambridge University Press",

note = "2004 MRS Fall Meeting ; Conference date: 29-11-2004 Through 03-12-2004",

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TY - JOUR

T1 - X-ray excited optical luminescence studies of InGaN and rare-earth doped GaN epilayers

AU - Katchkanov, V.

AU - Mosselmans, J. F.W.

AU - O'Donnell, K. P.

AU - Poolton, N. R.J.

AU - Hernandez, S.

PY - 2005/8/25

Y1 - 2005/8/25

N2 - A successful attempt to use X-ray Excited Optical Luminescence (XEOL) for the detection of Extended X-ray Absorption Fine Structure (EXAFS) in III-nitrides is reported. The samples studied were InGaN and rare-earth (RE) doped GaN epilayers. For the first time Ga K-edge EXAFS oscillations were measured by monitoring the well-known "yellow" emission of GaN at 560 nm. The analysis of Optically Detected (OD) EXAFS data confirmed the expected local structure for Ga in GaN. The intensity oscillation of the 'yellow' band when X-ray energy was scanned across the Ga K-edge indicates that core excitation of Ga atom has a high probability of transfer to defects responsible for 'yellow' emission.

AB - A successful attempt to use X-ray Excited Optical Luminescence (XEOL) for the detection of Extended X-ray Absorption Fine Structure (EXAFS) in III-nitrides is reported. The samples studied were InGaN and rare-earth (RE) doped GaN epilayers. For the first time Ga K-edge EXAFS oscillations were measured by monitoring the well-known "yellow" emission of GaN at 560 nm. The analysis of Optically Detected (OD) EXAFS data confirmed the expected local structure for Ga in GaN. The intensity oscillation of the 'yellow' band when X-ray energy was scanned across the Ga K-edge indicates that core excitation of Ga atom has a high probability of transfer to defects responsible for 'yellow' emission.

KW - x-ray xcited optical luminescence (XEOL)

KW - extended x-ray absorption fine structure (EXAFS)

KW - InGaN

UR - http://www.scopus.com/inward/record.url?scp=23844487403&partnerID=8YFLogxK

U2 - 10.1557/PROC-831-E3.31

DO - 10.1557/PROC-831-E3.31

M3 - Conference article

AN - SCOPUS:23844487403

SN - 0272-9172

VL - 831

SP - 209

EP - 213

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

M1 - E3.31

T2 - 2004 MRS Fall Meeting

Y2 - 29 November 2004 through 3 December 2004

ER -

X-ray excited optical luminescence studies of InGaN and rare-earth doped GaN epilayers

Abstract

Keywords

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