X-ray excited optical luminescence studies of InGaN and rare-earth doped GaN epilayers

V. Katchkanov, J. F.W. Mosselmans, K. P. O'Donnell, N. R.J. Poolton, S. Hernandez

Research output: Contribution to journalConference article

Abstract

A successful attempt to use X-ray Excited Optical Luminescence (XEOL) for the detection of Extended X-ray Absorption Fine Structure (EXAFS) in III-nitrides is reported. The samples studied were InGaN and rare-earth (RE) doped GaN epilayers. For the first time Ga K-edge EXAFS oscillations were measured by monitoring the well-known "yellow" emission of GaN at 560 nm. The analysis of Optically Detected (OD) EXAFS data confirmed the expected local structure for Ga in GaN. The intensity oscillation of the 'yellow' band when X-ray energy was scanned across the Ga K-edge indicates that core excitation of Ga atom has a high probability of transfer to defects responsible for 'yellow' emission.

Original languageEnglish
Article numberE3.31
Pages (from-to)209-213
Number of pages5
JournalMaterials Research Society Symposium Proceedings
Volume831
DOIs
Publication statusPublished - 25 Aug 2005
Event2004 MRS Fall Meeting - Boston, MA, United States
Duration: 29 Nov 20043 Dec 2004

Keywords

  • x-ray xcited optical luminescence (XEOL)
  • extended x-ray absorption fine structure (EXAFS)
  • InGaN

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