A successful attempt to use X-ray Excited Optical Luminescence (XEOL) for the detection of Extended X-ray Absorption Fine Structure (EXAFS) in III-nitrides is reported. The samples studied were InGaN and rare-earth (RE) doped GaN epilayers. For the first time Ga K-edge EXAFS oscillations were measured by monitoring the well-known "yellow" emission of GaN at 560 nm. The analysis of Optically Detected (OD) EXAFS data confirmed the expected local structure for Ga in GaN. The intensity oscillation of the 'yellow' band when X-ray energy was scanned across the Ga K-edge indicates that core excitation of Ga atom has a high probability of transfer to defects responsible for 'yellow' emission.
|Number of pages||5|
|Journal||Materials Research Society Symposium Proceedings|
|Publication status||Published - 25 Aug 2005|
|Event||2004 MRS Fall Meeting - Boston, MA, United States|
Duration: 29 Nov 2004 → 3 Dec 2004
- x-ray xcited optical luminescence (XEOL)
- extended x-ray absorption fine structure (EXAFS)