Wishful physics: Some common misconceptions about InGaN

K P O'Donnell, S Pereira, R W Martin, P R Edwards, M J Tobin, J F W Mosselmans

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

All III-N visible light emitting devices contain ultrathin active layers of InGaN. Although this material has been widely studied during the last ten years or so, opinion is still divided as to its nature. Most researchers would agree with the proposition that III-nitride "alloys" are a mess, at least when compared with analogous III-As materials. It may be further argued that the quality of InGaN samples is at present too variable to allow general statements to be made about the material. We repudiate this misconception. The similarities between luminescent InGaN samples from different laboratories outweigh the differences. Any differences that do occur can be confidently accounted for, in terms of a peculiar growth habit of III-nitrides. We also briefly discuss the status of accidental InN quantum dots.

Original languageEnglish
Pages (from-to)532-536
Number of pages5
JournalPhysica Status Solidi A - Applications and Materials Science
Volume195
Issue number3
DOIs
Publication statusPublished - Feb 2003

Keywords

  • photoluminescence excitation spectroscopy
  • absorption fine-structure
  • molecular-beam epitaxy
  • X-ray-diffraction
  • exciton localization
  • quantum-wells
  • stokes shift
  • epilayers
  • layers
  • dependence

Fingerprint Dive into the research topics of 'Wishful physics: Some common misconceptions about InGaN'. Together they form a unique fingerprint.

  • Cite this