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Weakly bound carbon-hydrogen complex in silicon

  • L. Hoffmann
  • , E. V. Lavrov
  • , B. Bech Nielsen
  • , B. Hourahine
  • , R. Jones
  • , S. Öberg
  • , P. R. Briddon

Research output: Contribution to journalArticlepeer-review

Abstract

Local vibrational modes of a weakly bound carbon-hydrogen complex in silicon have been identified with infrared-absorption spectroscopy. After implantation of protons at ∼20 K and subsequent annealing at 180 K, two carbon modes at 596 and 661 cm − 1 , and one hydrogen mode at 1885 cm − 1 are observed. The three modes originate from the same complex, which is identified as bond-centered hydrogen in the vicinity of a nearby substitutional carbon atom. Ab initio theory has been applied to calculate the structure and local modes of carbon-hydrogen complexes with hydrogen located at the first, second, and third nearest bond-center site to substitutional carbon. The results support our assignment.
Original languageEnglish
Article number16659
Number of pages8
JournalPhysical Review B (Condensed Matter)
Volume61
Issue number24
DOIs
Publication statusPublished - 15 Jun 2000

Keywords

  • hydrogen
  • silicon
  • local vibrational modes
  • carbon-hydrogen complex

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