Weakly bound carbon-hydrogen complex in silicon

L. Hoffmann, E. V. Lavrov, B. Bech Nielsen, B. Hourahine, R. Jones, S. Öberg, P. R. Briddon

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Abstract

Local vibrational modes of a weakly bound carbon-hydrogen complex in silicon have been identified with infrared-absorption spectroscopy. After implantation of protons at ∼20 K and subsequent annealing at 180 K, two carbon modes at 596 and 661 cm − 1 , and one hydrogen mode at 1885 cm − 1 are observed. The three modes originate from the same complex, which is identified as bond-centered hydrogen in the vicinity of a nearby substitutional carbon atom. Ab initio theory has been applied to calculate the structure and local modes of carbon-hydrogen complexes with hydrogen located at the first, second, and third nearest bond-center site to substitutional carbon. The results support our assignment.
Original languageEnglish
Article number16659
Number of pages8
JournalPhysical Review B (Condensed Matter)
Volume61
Issue number24
DOIs
Publication statusPublished - 15 Jun 2000

Keywords

  • hydrogen
  • silicon
  • local vibrational modes
  • carbon-hydrogen complex

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