Weakly bound carbon-hydrogen complex in silicon

L. Hoffmann, E. V. Lavrov, B. Bech Nielsen, B. Hourahine, R. Jones, S. Öberg, P. R. Briddon

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Local vibrational modes of a weakly bound carbon-hydrogen complex in silicon have been identified with infrared-absorption spectroscopy. After implantation of protons at ∼20 K and subsequent annealing at 180 K, two carbon modes at 596 and 661 cm − 1 , and one hydrogen mode at 1885 cm − 1 are observed. The three modes originate from the same complex, which is identified as bond-centered hydrogen in the vicinity of a nearby substitutional carbon atom. Ab initio theory has been applied to calculate the structure and local modes of carbon-hydrogen complexes with hydrogen located at the first, second, and third nearest bond-center site to substitutional carbon. The results support our assignment.
Original languageEnglish
Article number16659
Number of pages8
JournalPhysical Review B (Condensed Matter)
Volume61
Issue number24
DOIs
Publication statusPublished - 15 Jun 2000

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carbon
silicon
hydrogen
infrared absorption
vibration mode
implantation
absorption spectroscopy
infrared spectroscopy
annealing
protons
atoms

Keywords

  • hydrogen
  • silicon
  • local vibrational modes
  • carbon-hydrogen complex

Cite this

Hoffmann, L., Lavrov, E. V., Bech Nielsen, B., Hourahine, B., Jones, R., Öberg, S., & Briddon, P. R. (2000). Weakly bound carbon-hydrogen complex in silicon. Physical Review B (Condensed Matter), 61(24), [16659]. https://doi.org/10.1103/PhysRevB.61.16659
Hoffmann, L. ; Lavrov, E. V. ; Bech Nielsen, B. ; Hourahine, B. ; Jones, R. ; Öberg, S. ; Briddon, P. R. / Weakly bound carbon-hydrogen complex in silicon. In: Physical Review B (Condensed Matter). 2000 ; Vol. 61, No. 24.
@article{2ce96e4721ce4ef5b7c889d3435f4f85,
title = "Weakly bound carbon-hydrogen complex in silicon",
abstract = "Local vibrational modes of a weakly bound carbon-hydrogen complex in silicon have been identified with infrared-absorption spectroscopy. After implantation of protons at ∼20 K and subsequent annealing at 180 K, two carbon modes at 596 and 661 cm − 1 , and one hydrogen mode at 1885 cm − 1 are observed. The three modes originate from the same complex, which is identified as bond-centered hydrogen in the vicinity of a nearby substitutional carbon atom. Ab initio theory has been applied to calculate the structure and local modes of carbon-hydrogen complexes with hydrogen located at the first, second, and third nearest bond-center site to substitutional carbon. The results support our assignment.",
keywords = "hydrogen, silicon, local vibrational modes, carbon-hydrogen complex",
author = "L. Hoffmann and Lavrov, {E. V.} and {Bech Nielsen}, B. and B. Hourahine and R. Jones and S. {\"O}berg and Briddon, {P. R.}",
year = "2000",
month = "6",
day = "15",
doi = "10.1103/PhysRevB.61.16659",
language = "English",
volume = "61",
journal = "Physical Review B (Condensed Matter)",
issn = "0163-1829",
number = "24",

}

Hoffmann, L, Lavrov, EV, Bech Nielsen, B, Hourahine, B, Jones, R, Öberg, S & Briddon, PR 2000, 'Weakly bound carbon-hydrogen complex in silicon', Physical Review B (Condensed Matter), vol. 61, no. 24, 16659. https://doi.org/10.1103/PhysRevB.61.16659

Weakly bound carbon-hydrogen complex in silicon. / Hoffmann, L.; Lavrov, E. V.; Bech Nielsen, B.; Hourahine, B.; Jones, R.; Öberg, S.; Briddon, P. R.

In: Physical Review B (Condensed Matter), Vol. 61, No. 24, 16659, 15.06.2000.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Weakly bound carbon-hydrogen complex in silicon

AU - Hoffmann, L.

AU - Lavrov, E. V.

AU - Bech Nielsen, B.

AU - Hourahine, B.

AU - Jones, R.

AU - Öberg, S.

AU - Briddon, P. R.

PY - 2000/6/15

Y1 - 2000/6/15

N2 - Local vibrational modes of a weakly bound carbon-hydrogen complex in silicon have been identified with infrared-absorption spectroscopy. After implantation of protons at ∼20 K and subsequent annealing at 180 K, two carbon modes at 596 and 661 cm − 1 , and one hydrogen mode at 1885 cm − 1 are observed. The three modes originate from the same complex, which is identified as bond-centered hydrogen in the vicinity of a nearby substitutional carbon atom. Ab initio theory has been applied to calculate the structure and local modes of carbon-hydrogen complexes with hydrogen located at the first, second, and third nearest bond-center site to substitutional carbon. The results support our assignment.

AB - Local vibrational modes of a weakly bound carbon-hydrogen complex in silicon have been identified with infrared-absorption spectroscopy. After implantation of protons at ∼20 K and subsequent annealing at 180 K, two carbon modes at 596 and 661 cm − 1 , and one hydrogen mode at 1885 cm − 1 are observed. The three modes originate from the same complex, which is identified as bond-centered hydrogen in the vicinity of a nearby substitutional carbon atom. Ab initio theory has been applied to calculate the structure and local modes of carbon-hydrogen complexes with hydrogen located at the first, second, and third nearest bond-center site to substitutional carbon. The results support our assignment.

KW - hydrogen

KW - silicon

KW - local vibrational modes

KW - carbon-hydrogen complex

UR - http://journals.aps.org/prb/

U2 - 10.1103/PhysRevB.61.16659

DO - 10.1103/PhysRevB.61.16659

M3 - Article

VL - 61

JO - Physical Review B (Condensed Matter)

JF - Physical Review B (Condensed Matter)

SN - 0163-1829

IS - 24

M1 - 16659

ER -

Hoffmann L, Lavrov EV, Bech Nielsen B, Hourahine B, Jones R, Öberg S et al. Weakly bound carbon-hydrogen complex in silicon. Physical Review B (Condensed Matter). 2000 Jun 15;61(24). 16659. https://doi.org/10.1103/PhysRevB.61.16659