Weakly bound carbon-hydrogen complex in silicon

L. Hoffmann, E. V. Lavrov, B. Bech Nielsen, B. Hourahine, R. Jones, S. Öberg, P. R. Briddon

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Local vibrational modes of a weakly bound carbon-hydrogen complex in silicon have been identified with infrared-absorption spectroscopy. After implantation of protons at ∼20 K and subsequent annealing at 180 K, two carbon modes at 596 and 661 cm − 1 , and one hydrogen mode at 1885 cm − 1 are observed. The three modes originate from the same complex, which is identified as bond-centered hydrogen in the vicinity of a nearby substitutional carbon atom. Ab initio theory has been applied to calculate the structure and local modes of carbon-hydrogen complexes with hydrogen located at the first, second, and third nearest bond-center site to substitutional carbon. The results support our assignment.
LanguageEnglish
Article number16659
Number of pages8
JournalPhysical Review B (Condensed Matter)
Volume61
Issue number24
DOIs
Publication statusPublished - 15 Jun 2000

Fingerprint

Silicon
Hydrogen
Carbon
carbon
silicon
hydrogen
Infrared absorption
Absorption spectroscopy
Ion implantation
infrared absorption
Protons
Infrared spectroscopy
vibration mode
implantation
absorption spectroscopy
infrared spectroscopy
Annealing
Atoms
annealing
protons

Keywords

  • hydrogen
  • silicon
  • local vibrational modes
  • carbon-hydrogen complex

Cite this

Hoffmann, L., Lavrov, E. V., Bech Nielsen, B., Hourahine, B., Jones, R., Öberg, S., & Briddon, P. R. (2000). Weakly bound carbon-hydrogen complex in silicon. Physical Review B (Condensed Matter), 61(24), [16659]. https://doi.org/10.1103/PhysRevB.61.16659
Hoffmann, L. ; Lavrov, E. V. ; Bech Nielsen, B. ; Hourahine, B. ; Jones, R. ; Öberg, S. ; Briddon, P. R. / Weakly bound carbon-hydrogen complex in silicon. In: Physical Review B (Condensed Matter). 2000 ; Vol. 61, No. 24.
@article{2ce96e4721ce4ef5b7c889d3435f4f85,
title = "Weakly bound carbon-hydrogen complex in silicon",
abstract = "Local vibrational modes of a weakly bound carbon-hydrogen complex in silicon have been identified with infrared-absorption spectroscopy. After implantation of protons at ∼20 K and subsequent annealing at 180 K, two carbon modes at 596 and 661 cm − 1 , and one hydrogen mode at 1885 cm − 1 are observed. The three modes originate from the same complex, which is identified as bond-centered hydrogen in the vicinity of a nearby substitutional carbon atom. Ab initio theory has been applied to calculate the structure and local modes of carbon-hydrogen complexes with hydrogen located at the first, second, and third nearest bond-center site to substitutional carbon. The results support our assignment.",
keywords = "hydrogen, silicon, local vibrational modes, carbon-hydrogen complex",
author = "L. Hoffmann and Lavrov, {E. V.} and {Bech Nielsen}, B. and B. Hourahine and R. Jones and S. {\"O}berg and Briddon, {P. R.}",
year = "2000",
month = "6",
day = "15",
doi = "10.1103/PhysRevB.61.16659",
language = "English",
volume = "61",
journal = "Physical Review B (Condensed Matter)",
issn = "0163-1829",
number = "24",

}

Hoffmann, L, Lavrov, EV, Bech Nielsen, B, Hourahine, B, Jones, R, Öberg, S & Briddon, PR 2000, 'Weakly bound carbon-hydrogen complex in silicon' Physical Review B (Condensed Matter), vol. 61, no. 24, 16659. https://doi.org/10.1103/PhysRevB.61.16659

Weakly bound carbon-hydrogen complex in silicon. / Hoffmann, L.; Lavrov, E. V.; Bech Nielsen, B.; Hourahine, B.; Jones, R.; Öberg, S.; Briddon, P. R.

In: Physical Review B (Condensed Matter), Vol. 61, No. 24, 16659, 15.06.2000.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Weakly bound carbon-hydrogen complex in silicon

AU - Hoffmann, L.

AU - Lavrov, E. V.

AU - Bech Nielsen, B.

AU - Hourahine, B.

AU - Jones, R.

AU - Öberg, S.

AU - Briddon, P. R.

PY - 2000/6/15

Y1 - 2000/6/15

N2 - Local vibrational modes of a weakly bound carbon-hydrogen complex in silicon have been identified with infrared-absorption spectroscopy. After implantation of protons at ∼20 K and subsequent annealing at 180 K, two carbon modes at 596 and 661 cm − 1 , and one hydrogen mode at 1885 cm − 1 are observed. The three modes originate from the same complex, which is identified as bond-centered hydrogen in the vicinity of a nearby substitutional carbon atom. Ab initio theory has been applied to calculate the structure and local modes of carbon-hydrogen complexes with hydrogen located at the first, second, and third nearest bond-center site to substitutional carbon. The results support our assignment.

AB - Local vibrational modes of a weakly bound carbon-hydrogen complex in silicon have been identified with infrared-absorption spectroscopy. After implantation of protons at ∼20 K and subsequent annealing at 180 K, two carbon modes at 596 and 661 cm − 1 , and one hydrogen mode at 1885 cm − 1 are observed. The three modes originate from the same complex, which is identified as bond-centered hydrogen in the vicinity of a nearby substitutional carbon atom. Ab initio theory has been applied to calculate the structure and local modes of carbon-hydrogen complexes with hydrogen located at the first, second, and third nearest bond-center site to substitutional carbon. The results support our assignment.

KW - hydrogen

KW - silicon

KW - local vibrational modes

KW - carbon-hydrogen complex

UR - http://journals.aps.org/prb/

U2 - 10.1103/PhysRevB.61.16659

DO - 10.1103/PhysRevB.61.16659

M3 - Article

VL - 61

JO - Physical Review B (Condensed Matter)

T2 - Physical Review B (Condensed Matter)

JF - Physical Review B (Condensed Matter)

SN - 0163-1829

IS - 24

M1 - 16659

ER -

Hoffmann L, Lavrov EV, Bech Nielsen B, Hourahine B, Jones R, Öberg S et al. Weakly bound carbon-hydrogen complex in silicon. Physical Review B (Condensed Matter). 2000 Jun 15;61(24). 16659. https://doi.org/10.1103/PhysRevB.61.16659