Weak adsorption of ethylene on GaAs(100)

Y Chen, J Schmidt, L Siller, J C Barnard, R E Palmer, Yu Chen

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Hydrocarbon molecules are an important source of carbon contamination in semiconductor growth processes. We have investigated the adsorption of ethylene, C2H4, on the As-terminated GaAs(100)surface at 100 K in ultrahigh vacuum with high-resolution electron-energy-loss spectroscopy. We find that the ethylene molecules are predominantly adsorbed weakly (physisorbed) on the surface with the C=C double bond parallel to the As surface dimers. This behavior differs significantly from the adsorption of C2H4 on Si(100), as predicted by recent theoretical calculation. When the surface temperature is increased from 100 to 300 K, some of the physisorbed C2H4 molecules convert to chemisorbed species. [S0163-1829(98)02127-4].

LanguageEnglish
Pages1177-1180
Number of pages4
JournalPhysical Review B
Volume58
Issue number3
DOIs
Publication statusPublished - 15 Jul 1998

Fingerprint

Ethylene
ethylene
Adsorption
adsorption
Molecules
molecules
Semiconductor growth
ultrahigh vacuum
surface temperature
Electron energy loss spectroscopy
contamination
Ultrahigh vacuum
Hydrocarbons
hydrocarbons
energy dissipation
dimers
Dimers
electron energy
Contamination
Carbon

Keywords

  • energy-loss spectroscopy
  • grown gaas
  • adsorption
  • ethylene

Cite this

Chen, Y., Schmidt, J., Siller, L., Barnard, J. C., Palmer, R. E., & Chen, Y. (1998). Weak adsorption of ethylene on GaAs(100). Physical Review B, 58(3), 1177-1180. https://doi.org/10.1103/PhysRevB.58.1177
Chen, Y ; Schmidt, J ; Siller, L ; Barnard, J C ; Palmer, R E ; Chen, Yu. / Weak adsorption of ethylene on GaAs(100). In: Physical Review B. 1998 ; Vol. 58, No. 3. pp. 1177-1180.
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Chen, Y, Schmidt, J, Siller, L, Barnard, JC, Palmer, RE & Chen, Y 1998, 'Weak adsorption of ethylene on GaAs(100)' Physical Review B, vol. 58, no. 3, pp. 1177-1180. https://doi.org/10.1103/PhysRevB.58.1177

Weak adsorption of ethylene on GaAs(100). / Chen, Y ; Schmidt, J ; Siller, L ; Barnard, J C ; Palmer, R E ; Chen, Yu.

In: Physical Review B, Vol. 58, No. 3, 15.07.1998, p. 1177-1180.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Weak adsorption of ethylene on GaAs(100)

AU - Chen, Y

AU - Schmidt, J

AU - Siller, L

AU - Barnard, J C

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PY - 1998/7/15

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N2 - Hydrocarbon molecules are an important source of carbon contamination in semiconductor growth processes. We have investigated the adsorption of ethylene, C2H4, on the As-terminated GaAs(100)surface at 100 K in ultrahigh vacuum with high-resolution electron-energy-loss spectroscopy. We find that the ethylene molecules are predominantly adsorbed weakly (physisorbed) on the surface with the C=C double bond parallel to the As surface dimers. This behavior differs significantly from the adsorption of C2H4 on Si(100), as predicted by recent theoretical calculation. When the surface temperature is increased from 100 to 300 K, some of the physisorbed C2H4 molecules convert to chemisorbed species. [S0163-1829(98)02127-4].

AB - Hydrocarbon molecules are an important source of carbon contamination in semiconductor growth processes. We have investigated the adsorption of ethylene, C2H4, on the As-terminated GaAs(100)surface at 100 K in ultrahigh vacuum with high-resolution electron-energy-loss spectroscopy. We find that the ethylene molecules are predominantly adsorbed weakly (physisorbed) on the surface with the C=C double bond parallel to the As surface dimers. This behavior differs significantly from the adsorption of C2H4 on Si(100), as predicted by recent theoretical calculation. When the surface temperature is increased from 100 to 300 K, some of the physisorbed C2H4 molecules convert to chemisorbed species. [S0163-1829(98)02127-4].

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Chen Y, Schmidt J, Siller L, Barnard JC, Palmer RE, Chen Y. Weak adsorption of ethylene on GaAs(100). Physical Review B. 1998 Jul 15;58(3):1177-1180. https://doi.org/10.1103/PhysRevB.58.1177