Wavelength dispersive X-ray analysis and cathodoluminescence techniques for monitoring the chemical removal of AllnN on an n-face GaN surface

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8 Citations (Scopus)

Abstract

This paper shows the selective etching process of an AlInN sacrificial layer, lattice-matched to GaN, on N-face GaN by an aqueous solution of 1,2-diaminoethane. Using the wavelength dispersive X-ray (WDX) spectrometers on an electron probe micro-analyser, together with an optical spectrometer and silicon CCD array added to the light microscope, and sharing the same focus as the electron microscope, cathodoluminescence spectra are collected from exactly the same spot as sampled by the WDX spectrometers. This technique allows the compositional properties of the etched AlInN layer and the optical properties of the semiconductor layers underlying the sacrificial layer to be scrutinised, verifying the etching selectivity and the efficiency of the process.
Original languageEnglish
Pages (from-to)369-372
Number of pages4
JournalSuperlattices and Microstructures
Volume40
Issue number4-6
DOIs
Publication statusPublished - 2006

Keywords

  • GaN
  • AlInN
  • wavelength dispersive X-ray analysis
  • cathodoluminescence
  • wet etching

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