Wavelength dispersive X-ray analysis and cathodoluminescence techniques for monitoring the chemical removal of AllnN on an n-face GaN surface

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

This paper shows the selective etching process of an AlInN sacrificial layer, lattice-matched to GaN, on N-face GaN by an aqueous solution of 1,2-diaminoethane. Using the wavelength dispersive X-ray (WDX) spectrometers on an electron probe micro-analyser, together with an optical spectrometer and silicon CCD array added to the light microscope, and sharing the same focus as the electron microscope, cathodoluminescence spectra are collected from exactly the same spot as sampled by the WDX spectrometers. This technique allows the compositional properties of the etched AlInN layer and the optical properties of the semiconductor layers underlying the sacrificial layer to be scrutinised, verifying the etching selectivity and the efficiency of the process.
Original languageEnglish
Pages (from-to)369-372
Number of pages4
JournalSuperlattices and Microstructures
Volume40
Issue number4-6
DOIs
Publication statusPublished - 2006

Fingerprint

X ray spectrometers
ethylenediamine
Cathodoluminescence
X ray analysis
cathodoluminescence
Etching
Wavelength
Monitoring
Silicon
spectrometers
Charge coupled devices
wavelengths
Spectrometers
Microscopes
x rays
Electron microscopes
Optical properties
etching
Semiconductor materials
Electrons

Keywords

  • GaN
  • AlInN
  • wavelength dispersive X-ray analysis
  • cathodoluminescence
  • wet etching

Cite this

@article{d8420de9fa514684a97a0953a722dd65,
title = "Wavelength dispersive X-ray analysis and cathodoluminescence techniques for monitoring the chemical removal of AllnN on an n-face GaN surface",
abstract = "This paper shows the selective etching process of an AlInN sacrificial layer, lattice-matched to GaN, on N-face GaN by an aqueous solution of 1,2-diaminoethane. Using the wavelength dispersive X-ray (WDX) spectrometers on an electron probe micro-analyser, together with an optical spectrometer and silicon CCD array added to the light microscope, and sharing the same focus as the electron microscope, cathodoluminescence spectra are collected from exactly the same spot as sampled by the WDX spectrometers. This technique allows the compositional properties of the etched AlInN layer and the optical properties of the semiconductor layers underlying the sacrificial layer to be scrutinised, verifying the etching selectivity and the efficiency of the process.",
keywords = "GaN, AlInN, wavelength dispersive X-ray analysis, cathodoluminescence, wet etching",
author = "F. Rizzi and P.R. Edwards and I.M. Watson and R.W. Martin",
year = "2006",
doi = "10.1016/j.spmi.2006.07.007",
language = "English",
volume = "40",
pages = "369--372",
journal = "Superlattices and Microstructures",
issn = "0749-6036",
number = "4-6",

}

TY - JOUR

T1 - Wavelength dispersive X-ray analysis and cathodoluminescence techniques for monitoring the chemical removal of AllnN on an n-face GaN surface

AU - Rizzi, F.

AU - Edwards, P.R.

AU - Watson, I.M.

AU - Martin, R.W.

PY - 2006

Y1 - 2006

N2 - This paper shows the selective etching process of an AlInN sacrificial layer, lattice-matched to GaN, on N-face GaN by an aqueous solution of 1,2-diaminoethane. Using the wavelength dispersive X-ray (WDX) spectrometers on an electron probe micro-analyser, together with an optical spectrometer and silicon CCD array added to the light microscope, and sharing the same focus as the electron microscope, cathodoluminescence spectra are collected from exactly the same spot as sampled by the WDX spectrometers. This technique allows the compositional properties of the etched AlInN layer and the optical properties of the semiconductor layers underlying the sacrificial layer to be scrutinised, verifying the etching selectivity and the efficiency of the process.

AB - This paper shows the selective etching process of an AlInN sacrificial layer, lattice-matched to GaN, on N-face GaN by an aqueous solution of 1,2-diaminoethane. Using the wavelength dispersive X-ray (WDX) spectrometers on an electron probe micro-analyser, together with an optical spectrometer and silicon CCD array added to the light microscope, and sharing the same focus as the electron microscope, cathodoluminescence spectra are collected from exactly the same spot as sampled by the WDX spectrometers. This technique allows the compositional properties of the etched AlInN layer and the optical properties of the semiconductor layers underlying the sacrificial layer to be scrutinised, verifying the etching selectivity and the efficiency of the process.

KW - GaN

KW - AlInN

KW - wavelength dispersive X-ray analysis

KW - cathodoluminescence

KW - wet etching

UR - http://www.emrs-strasbourg.com/index.php?option=com_content&task=view&id=23&Itemid=66

UR - http://dx.doi.org/10.1016/j.spmi.2006.07.007

U2 - 10.1016/j.spmi.2006.07.007

DO - 10.1016/j.spmi.2006.07.007

M3 - Article

VL - 40

SP - 369

EP - 372

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

IS - 4-6

ER -