Visualization of defects in nitride semiconductors by electron channeling (Conference Presentation)

Carol Trager-Cowan, Aeshah Alasmari, William Avis, Jochen Bruckbauer, Paul Edwards, Ben Hourahine, Albes Kotzai, Gunnar Kusch, Robert Martin, Ryan McDermott, Naresh Gunasekar, M. Nouf-Allehiani, Elena Pascal, David Thomson, Dale Waters, Arantxa Vilalta-Clemente, Angus Wilkinson, Peter J. Parbrook, Ken Mingard, Aimo Winkelmann

Research output: Chapter in Book/Report/Conference proceedingConference contribution book


The diffraction based scanning electron microscopy (SEM) technique of electron channeling contrast imaging (ECCI) provides rapid and non-destructive information on defects on length scales from tens of nanometres to tens of micrometres. ECCI may be complemented by electron backscatter diffraction (EBSD) and hyperspectral cathodoluminescence imaging (CL). EBSD provides orientation, phase, polarity and strain information, whilst CL reveals the influence of phase, composition, strain and defects on luminescence. I will discuss our recent investigations of phase, composition and polarity, the type, density and distribution of defects and the distribution of strain in a range of nitride semiconductor structures.
Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices XV
EditorsHiroshi Fujioka, Hadis Morkoç, Ulrich T. Schwarz
Number of pages1
Publication statusPublished - 10 Mar 2020


  • electron channeling
  • defects in nitride semiconductors
  • electron channeling contrast imaging (ECCI)
  • visualization
  • scanning electron microscopy


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