Abstract
The diffraction based scanning electron microscopy (SEM) technique of electron channeling contrast imaging (ECCI) provides rapid and non-destructive information on defects on length scales from tens of nanometres to tens of micrometres. ECCI may be complemented by electron backscatter diffraction (EBSD) and hyperspectral cathodoluminescence imaging (CL). EBSD provides orientation, phase, polarity and strain information, whilst CL reveals the influence of phase, composition, strain and defects on luminescence. I will discuss our recent investigations of phase, composition and polarity, the type, density and distribution of defects and the distribution of strain in a range of nitride semiconductor structures.
Original language | English |
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Title of host publication | Gallium Nitride Materials and Devices XV |
Editors | Hiroshi Fujioka, Hadis Morkoç, Ulrich T. Schwarz |
Number of pages | 1 |
Volume | 11280 |
DOIs | |
Publication status | Published - 10 Mar 2020 |
Keywords
- electron channeling
- defects in nitride semiconductors
- electron channeling contrast imaging (ECCI)
- visualization
- scanning electron microscopy