Visible-light communications using a CMOS-controlled micro-light-emitting-diode array

Jonathan Mckendry, David Massoubre, Shuailong Zhang, B.R. Rae, R.P. Green, Erdan Gu, R.K. Henderson, A.E. Kelly, Martin Dawson

Research output: Contribution to journalArticle

182 Citations (Scopus)

Abstract

We report the high-frequency modulation of individual pixels in 88 arrays of III-nitride-based micro-pixellated light-emitting diodes, where the pixels within the array range from 14 to 84 m in diameter. The peak emission wavelengths of the devices are 370, 405, 450 and 520 nm, respectively. Smaller area micro-LED pixels generally exhibit higher modulation bandwidths than their larger area counterparts, which is attributed to their ability to be driven at higher current densities. The highest optical -3 dB modulation bandwidths from these devices are shown to be in excess of 400 MHz, which, to our knowledge, are the highest bandwidths yet reported for GaN LEDs. These devices are also integrated with a complementary metal-oxidesemiconductor (CMOS) driver array chip, allowing for simple computer control of individual micro-LED pixels. The bandwidth of the integrated micro-LED/CMOS pixels is shown to be up to 185 MHz; data transmission at bit rates up to 512 Mbit/s is demonstrated using on-off keying non return-to-zero modulation with a bit-error ratio of less than 110..10, using a 450 nmemitting 24 m diameter CMOS-controlled micro-LED. As the CMOS chip allows for up to 16 independent data inputs, this device demonstrates the potential for multi-Gigabit/s parallel data transmission using CMOS-controlled micro-LEDs.
LanguageEnglish
Pages61-67
Number of pages7
JournalJournal of Lightwave Technology
Volume30
Issue number1
Early online date8 Nov 2011
DOIs
Publication statusPublished - 13 Jan 2012

Fingerprint

optical communication
light emitting diodes
pixels
metals
bandwidth
data transmission
modulation
chips
keying
frequency modulation
nitrides
high current
current density
wavelengths

Keywords

  • photonics
  • micro-light-emitting-diode array
  • lightwave technology
  • micro LEDs
  • modulation
  • optical transmitters
  • bandwith
  • arrays
  • CMOS integrated circuits

Cite this

Mckendry, Jonathan ; Massoubre, David ; Zhang, Shuailong ; Rae, B.R. ; Green, R.P. ; Gu, Erdan ; Henderson, R.K. ; Kelly, A.E. ; Dawson, Martin. / Visible-light communications using a CMOS-controlled micro-light-emitting-diode array. In: Journal of Lightwave Technology. 2012 ; Vol. 30, No. 1. pp. 61-67.
@article{ab5d73cb8390491ea94e8297ff3caf3a,
title = "Visible-light communications using a CMOS-controlled micro-light-emitting-diode array",
abstract = "We report the high-frequency modulation of individual pixels in 88 arrays of III-nitride-based micro-pixellated light-emitting diodes, where the pixels within the array range from 14 to 84 m in diameter. The peak emission wavelengths of the devices are 370, 405, 450 and 520 nm, respectively. Smaller area micro-LED pixels generally exhibit higher modulation bandwidths than their larger area counterparts, which is attributed to their ability to be driven at higher current densities. The highest optical -3 dB modulation bandwidths from these devices are shown to be in excess of 400 MHz, which, to our knowledge, are the highest bandwidths yet reported for GaN LEDs. These devices are also integrated with a complementary metal-oxidesemiconductor (CMOS) driver array chip, allowing for simple computer control of individual micro-LED pixels. The bandwidth of the integrated micro-LED/CMOS pixels is shown to be up to 185 MHz; data transmission at bit rates up to 512 Mbit/s is demonstrated using on-off keying non return-to-zero modulation with a bit-error ratio of less than 110..10, using a 450 nmemitting 24 m diameter CMOS-controlled micro-LED. As the CMOS chip allows for up to 16 independent data inputs, this device demonstrates the potential for multi-Gigabit/s parallel data transmission using CMOS-controlled micro-LEDs.",
keywords = "photonics, micro-light-emitting-diode array , lightwave technology, micro LEDs, modulation, optical transmitters, bandwith, arrays, CMOS integrated circuits",
author = "Jonathan Mckendry and David Massoubre and Shuailong Zhang and B.R. Rae and R.P. Green and Erdan Gu and R.K. Henderson and A.E. Kelly and Martin Dawson",
year = "2012",
month = "1",
day = "13",
doi = "10.1109/JLT.2011.2175090",
language = "English",
volume = "30",
pages = "61--67",
journal = "Journal of Lightwave Technology",
issn = "0733-8724",
publisher = "Optical Society of America",
number = "1",

}

Visible-light communications using a CMOS-controlled micro-light-emitting-diode array. / Mckendry, Jonathan; Massoubre, David; Zhang, Shuailong; Rae, B.R.; Green, R.P.; Gu, Erdan; Henderson, R.K.; Kelly, A.E.; Dawson, Martin.

In: Journal of Lightwave Technology, Vol. 30, No. 1, 13.01.2012, p. 61-67.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Visible-light communications using a CMOS-controlled micro-light-emitting-diode array

AU - Mckendry, Jonathan

AU - Massoubre, David

AU - Zhang, Shuailong

AU - Rae, B.R.

AU - Green, R.P.

AU - Gu, Erdan

AU - Henderson, R.K.

AU - Kelly, A.E.

AU - Dawson, Martin

PY - 2012/1/13

Y1 - 2012/1/13

N2 - We report the high-frequency modulation of individual pixels in 88 arrays of III-nitride-based micro-pixellated light-emitting diodes, where the pixels within the array range from 14 to 84 m in diameter. The peak emission wavelengths of the devices are 370, 405, 450 and 520 nm, respectively. Smaller area micro-LED pixels generally exhibit higher modulation bandwidths than their larger area counterparts, which is attributed to their ability to be driven at higher current densities. The highest optical -3 dB modulation bandwidths from these devices are shown to be in excess of 400 MHz, which, to our knowledge, are the highest bandwidths yet reported for GaN LEDs. These devices are also integrated with a complementary metal-oxidesemiconductor (CMOS) driver array chip, allowing for simple computer control of individual micro-LED pixels. The bandwidth of the integrated micro-LED/CMOS pixels is shown to be up to 185 MHz; data transmission at bit rates up to 512 Mbit/s is demonstrated using on-off keying non return-to-zero modulation with a bit-error ratio of less than 110..10, using a 450 nmemitting 24 m diameter CMOS-controlled micro-LED. As the CMOS chip allows for up to 16 independent data inputs, this device demonstrates the potential for multi-Gigabit/s parallel data transmission using CMOS-controlled micro-LEDs.

AB - We report the high-frequency modulation of individual pixels in 88 arrays of III-nitride-based micro-pixellated light-emitting diodes, where the pixels within the array range from 14 to 84 m in diameter. The peak emission wavelengths of the devices are 370, 405, 450 and 520 nm, respectively. Smaller area micro-LED pixels generally exhibit higher modulation bandwidths than their larger area counterparts, which is attributed to their ability to be driven at higher current densities. The highest optical -3 dB modulation bandwidths from these devices are shown to be in excess of 400 MHz, which, to our knowledge, are the highest bandwidths yet reported for GaN LEDs. These devices are also integrated with a complementary metal-oxidesemiconductor (CMOS) driver array chip, allowing for simple computer control of individual micro-LED pixels. The bandwidth of the integrated micro-LED/CMOS pixels is shown to be up to 185 MHz; data transmission at bit rates up to 512 Mbit/s is demonstrated using on-off keying non return-to-zero modulation with a bit-error ratio of less than 110..10, using a 450 nmemitting 24 m diameter CMOS-controlled micro-LED. As the CMOS chip allows for up to 16 independent data inputs, this device demonstrates the potential for multi-Gigabit/s parallel data transmission using CMOS-controlled micro-LEDs.

KW - photonics

KW - micro-light-emitting-diode array

KW - lightwave technology

KW - micro LEDs

KW - modulation

KW - optical transmitters

KW - bandwith

KW - arrays

KW - CMOS integrated circuits

U2 - 10.1109/JLT.2011.2175090

DO - 10.1109/JLT.2011.2175090

M3 - Article

VL - 30

SP - 61

EP - 67

JO - Journal of Lightwave Technology

T2 - Journal of Lightwave Technology

JF - Journal of Lightwave Technology

SN - 0733-8724

IS - 1

ER -