Vertical cavity semiconductor optical amplifiers based on dilute nitrides

Stephane Calvez, Nicolas Laurand

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

This chapter presents a comprehensive report on our work on dilute nitride vertical cavity semiconductor optical amplifiers. It includes a presentation of a theoretical analysis of the components and a summary of the experimental assessment of monolithic and fibre-based tunable devices operated in the continuous-wave regime. In particular, it is shown how some material parameters can be extracted from this device continuous-wave characterization or from gain-dynamics experiments. Current investigations on the extension of the operation towards the 1,550nm telecommunication band conclude this review.
LanguageEnglish
Title of host publicationDilute III-V Nitride Semiconductors and Material Systems
EditorsAyşe Erol
PublisherSpringer
Pages525-561
Number of pages37
ISBN (Print)9783540745280
DOIs
Publication statusPublished - 2008

Publication series

NameMaterials Science
PublisherSpringer
Volume105
ISSN (Print)0933-033X

Fingerprint

light amplifiers
continuous radiation
nitrides
cavities
telecommunication
fibers

Keywords

  • plasmonics and optical devices
  • optical and electronic materials
  • solid state physics
  • spectroscopy and microscopy Engineering
  • general optics
  • optoelectronics

Cite this

Calvez, S., & Laurand, N. (2008). Vertical cavity semiconductor optical amplifiers based on dilute nitrides. In A. Erol (Ed.), Dilute III-V Nitride Semiconductors and Material Systems (pp. 525-561). (Materials Science; Vol. 105). Springer. https://doi.org/10.1007/978-3-540-74529-7_20
Calvez, Stephane ; Laurand, Nicolas. / Vertical cavity semiconductor optical amplifiers based on dilute nitrides. Dilute III-V Nitride Semiconductors and Material Systems. editor / Ayşe Erol. Springer, 2008. pp. 525-561 (Materials Science).
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Calvez, S & Laurand, N 2008, Vertical cavity semiconductor optical amplifiers based on dilute nitrides. in A Erol (ed.), Dilute III-V Nitride Semiconductors and Material Systems. Materials Science, vol. 105, Springer, pp. 525-561. https://doi.org/10.1007/978-3-540-74529-7_20

Vertical cavity semiconductor optical amplifiers based on dilute nitrides. / Calvez, Stephane; Laurand, Nicolas.

Dilute III-V Nitride Semiconductors and Material Systems. ed. / Ayşe Erol. Springer, 2008. p. 525-561 (Materials Science; Vol. 105).

Research output: Chapter in Book/Report/Conference proceedingChapter

TY - CHAP

T1 - Vertical cavity semiconductor optical amplifiers based on dilute nitrides

AU - Calvez, Stephane

AU - Laurand, Nicolas

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AB - This chapter presents a comprehensive report on our work on dilute nitride vertical cavity semiconductor optical amplifiers. It includes a presentation of a theoretical analysis of the components and a summary of the experimental assessment of monolithic and fibre-based tunable devices operated in the continuous-wave regime. In particular, it is shown how some material parameters can be extracted from this device continuous-wave characterization or from gain-dynamics experiments. Current investigations on the extension of the operation towards the 1,550nm telecommunication band conclude this review.

KW - plasmonics and optical devices

KW - optical and electronic materials

KW - solid state physics

KW - spectroscopy and microscopy Engineering

KW - general optics

KW - optoelectronics

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DO - 10.1007/978-3-540-74529-7_20

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BT - Dilute III-V Nitride Semiconductors and Material Systems

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Calvez S, Laurand N. Vertical cavity semiconductor optical amplifiers based on dilute nitrides. In Erol A, editor, Dilute III-V Nitride Semiconductors and Material Systems. Springer. 2008. p. 525-561. (Materials Science). https://doi.org/10.1007/978-3-540-74529-7_20