Vertical cavity semiconductor optical amplifiers based on dilute nitrides

Stephane Calvez, Nicolas Laurand

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

This chapter presents a comprehensive report on our work on dilute nitride vertical cavity semiconductor optical amplifiers. It includes a presentation of a theoretical analysis of the components and a summary of the experimental assessment of monolithic and fibre-based tunable devices operated in the continuous-wave regime. In particular, it is shown how some material parameters can be extracted from this device continuous-wave characterization or from gain-dynamics experiments. Current investigations on the extension of the operation towards the 1,550nm telecommunication band conclude this review.
Original languageEnglish
Title of host publicationDilute III-V Nitride Semiconductors and Material Systems
EditorsAyşe Erol
PublisherSpringer
Pages525-561
Number of pages37
ISBN (Print)9783540745280
DOIs
Publication statusPublished - 2008

Publication series

NameMaterials Science
PublisherSpringer
Volume105
ISSN (Print)0933-033X

Keywords

  • plasmonics and optical devices
  • optical and electronic materials
  • solid state physics
  • spectroscopy and microscopy Engineering
  • general optics
  • optoelectronics

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