Valley splitting of single-electron Si MOS quantum dots

John King Gamble, Patrick Harvey-Collard, N. Tobias Jacobson, Andrew D. Baczewski, Erik Nielsen, Leon Maurer, Inès Montaño, Martin Rudolph, M. S. Carroll, C. H. Yang, A. Rossi, A. S. Dzurak, Richard P. Muller

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and opportunities. Although the physics governing these valley states has been the subject of intense study, quantitative agreement between experiment and theory remains elusive. Here, we present data from an experiment probing the valley states of quantum dot devices and develop a theory that is in quantitative agreement with both this and a recently reported experiment. Through sampling millions of realistic cases of interface roughness, our method provides evidence that the valley physics between the two samples is essentially the same.

LanguageEnglish
Article number253101
Number of pages4
JournalApplied Physics Letters
Volume109
Issue number25
DOIs
Publication statusPublished - 19 Dec 2016

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valleys
quantum dots
physics
electrons
silicon
metal oxide semiconductors
roughness
sampling
energy

Keywords

  • quantum dots
  • silicon quantum dots
  • manufacturable qubits

Cite this

Gamble, J. K., Harvey-Collard, P., Jacobson, N. T., Baczewski, A. D., Nielsen, E., Maurer, L., ... Muller, R. P. (2016). Valley splitting of single-electron Si MOS quantum dots. Applied Physics Letters, 109(25), [253101]. https://doi.org/10.1063/1.4972514
Gamble, John King ; Harvey-Collard, Patrick ; Jacobson, N. Tobias ; Baczewski, Andrew D. ; Nielsen, Erik ; Maurer, Leon ; Montaño, Inès ; Rudolph, Martin ; Carroll, M. S. ; Yang, C. H. ; Rossi, A. ; Dzurak, A. S. ; Muller, Richard P. / Valley splitting of single-electron Si MOS quantum dots. In: Applied Physics Letters. 2016 ; Vol. 109, No. 25.
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Gamble, JK, Harvey-Collard, P, Jacobson, NT, Baczewski, AD, Nielsen, E, Maurer, L, Montaño, I, Rudolph, M, Carroll, MS, Yang, CH, Rossi, A, Dzurak, AS & Muller, RP 2016, 'Valley splitting of single-electron Si MOS quantum dots' Applied Physics Letters, vol. 109, no. 25, 253101. https://doi.org/10.1063/1.4972514

Valley splitting of single-electron Si MOS quantum dots. / Gamble, John King; Harvey-Collard, Patrick; Jacobson, N. Tobias; Baczewski, Andrew D.; Nielsen, Erik; Maurer, Leon; Montaño, Inès; Rudolph, Martin; Carroll, M. S.; Yang, C. H.; Rossi, A.; Dzurak, A. S.; Muller, Richard P.

In: Applied Physics Letters, Vol. 109, No. 25, 253101, 19.12.2016.

Research output: Contribution to journalArticle

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AU - Gamble, John King

AU - Harvey-Collard, Patrick

AU - Jacobson, N. Tobias

AU - Baczewski, Andrew D.

AU - Nielsen, Erik

AU - Maurer, Leon

AU - Montaño, Inès

AU - Rudolph, Martin

AU - Carroll, M. S.

AU - Yang, C. H.

AU - Rossi, A.

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AU - Muller, Richard P.

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Gamble JK, Harvey-Collard P, Jacobson NT, Baczewski AD, Nielsen E, Maurer L et al. Valley splitting of single-electron Si MOS quantum dots. Applied Physics Letters. 2016 Dec 19;109(25). 253101. https://doi.org/10.1063/1.4972514