Validity of Vegard's rule for Al1-xInxN (0.08<x<0.28) thin films grown on GaN templates

S Magalhães, N Franco, I M Watson, R W Martin, K P O'Donnell, H P D Schenk, F Tang, T C Sadler, M J Kappers, R A Oliver, T Monteiro, T L Martin, P A J Bagot, M P Moody, E Alves, K Lorenz

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In this work, comparative x-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) measurements allow a comprehensive characterization of Al1−x In x N thin films grown on GaN. Within the limits of experimental accuracy, and in the compositional range 0.08  <  x  <  0.28, the lattice parameters of the alloys generally obey Vegard's rule, varying linearly with the InN fraction. Results are also consistent with the small deviation from linear behaviour suggested by Darakchieva et al (2008 Appl. Phys. Lett. 93 261908). However, unintentional incorporation of Ga, revealed by atom probe tomography (APT) at levels below the detection limit for RBS, may also affect the lattice parameters. Furthermore, in certain samples the compositions determined by XRD and RBS differ significantly. This fact, which was interpreted in earlier publications as an indication of a deviation from Vegard's rule, may rather be ascribed to the influence of defects or impurities on the lattice parameters of the alloy. The wide-ranging set of Al1−x In x N films studied allowed furthermore a detailed investigation of the composition leading to lattice-matching of Al1−x In x N/GaN bilayers.
LanguageEnglish
Article number205107
Number of pages20
JournalJournal of Physics D: Applied Physics
Volume50
Early online date29 Mar 2017
DOIs
Publication statusPublished - 28 Apr 2017

Fingerprint

Rutherford backscattering spectroscopy
Spectrometry
Lattice constants
lattice parameters
backscattering
templates
Thin films
x ray diffraction
thin films
Diffraction
spectroscopy
deviation
X rays
Chemical analysis
Tomography
indication
tomography
Impurities
impurities
Atoms

Keywords

  • comparative x-ray diffraction
  • Rutherford backscattering spectrometry
  • Vegard's rule
  • lattice parameters
  • gallium
  • thin films

Cite this

Magalhães, S ; Franco, N ; Watson, I M ; Martin, R W ; O'Donnell, K P ; Schenk, H P D ; Tang, F ; Sadler, T C ; Kappers, M J ; Oliver, R A ; Monteiro, T ; Martin, T L ; Bagot, P A J ; Moody, M P ; Alves, E ; Lorenz, K. / Validity of Vegard's rule for Al1-xInxN (0.08<x<0.28) thin films grown on GaN templates. In: Journal of Physics D: Applied Physics. 2017 ; Vol. 50.
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abstract = "In this work, comparative x-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) measurements allow a comprehensive characterization of Al1−x In x N thin films grown on GaN. Within the limits of experimental accuracy, and in the compositional range 0.08  <  x  <  0.28, the lattice parameters of the alloys generally obey Vegard's rule, varying linearly with the InN fraction. Results are also consistent with the small deviation from linear behaviour suggested by Darakchieva et al (2008 Appl. Phys. Lett. 93 261908). However, unintentional incorporation of Ga, revealed by atom probe tomography (APT) at levels below the detection limit for RBS, may also affect the lattice parameters. Furthermore, in certain samples the compositions determined by XRD and RBS differ significantly. This fact, which was interpreted in earlier publications as an indication of a deviation from Vegard's rule, may rather be ascribed to the influence of defects or impurities on the lattice parameters of the alloy. The wide-ranging set of Al1−x In x N films studied allowed furthermore a detailed investigation of the composition leading to lattice-matching of Al1−x In x N/GaN bilayers.",
keywords = "comparative x-ray diffraction, Rutherford backscattering spectrometry , Vegard's rule, lattice parameters, gallium, thin films",
author = "S Magalh{\~a}es and N Franco and Watson, {I M} and Martin, {R W} and O'Donnell, {K P} and Schenk, {H P D} and F Tang and Sadler, {T C} and Kappers, {M J} and Oliver, {R A} and T Monteiro and Martin, {T L} and Bagot, {P A J} and Moody, {M P} and E Alves and K Lorenz",
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Magalhães, S, Franco, N, Watson, IM, Martin, RW, O'Donnell, KP, Schenk, HPD, Tang, F, Sadler, TC, Kappers, MJ, Oliver, RA, Monteiro, T, Martin, TL, Bagot, PAJ, Moody, MP, Alves, E & Lorenz, K 2017, 'Validity of Vegard's rule for Al1-xInxN (0.08<x<0.28) thin films grown on GaN templates' Journal of Physics D: Applied Physics, vol. 50, 205107. https://doi.org/10.1088/1361-6463/aa69dc

Validity of Vegard's rule for Al1-xInxN (0.08<x<0.28) thin films grown on GaN templates. / Magalhães, S; Franco, N; Watson, I M; Martin, R W; O'Donnell, K P; Schenk, H P D; Tang, F; Sadler, T C; Kappers, M J; Oliver, R A; Monteiro, T; Martin, T L ; Bagot, P A J ; Moody, M P; Alves, E; Lorenz, K.

In: Journal of Physics D: Applied Physics, Vol. 50, 205107, 28.04.2017.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Validity of Vegard's rule for Al1-xInxN (0.08<x<0.28) thin films grown on GaN templates

AU - Magalhães, S

AU - Franco, N

AU - Watson, I M

AU - Martin, R W

AU - O'Donnell, K P

AU - Schenk, H P D

AU - Tang, F

AU - Sadler, T C

AU - Kappers, M J

AU - Oliver, R A

AU - Monteiro, T

AU - Martin, T L

AU - Bagot, P A J

AU - Moody, M P

AU - Alves, E

AU - Lorenz, K

PY - 2017/4/28

Y1 - 2017/4/28

N2 - In this work, comparative x-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) measurements allow a comprehensive characterization of Al1−x In x N thin films grown on GaN. Within the limits of experimental accuracy, and in the compositional range 0.08  <  x  <  0.28, the lattice parameters of the alloys generally obey Vegard's rule, varying linearly with the InN fraction. Results are also consistent with the small deviation from linear behaviour suggested by Darakchieva et al (2008 Appl. Phys. Lett. 93 261908). However, unintentional incorporation of Ga, revealed by atom probe tomography (APT) at levels below the detection limit for RBS, may also affect the lattice parameters. Furthermore, in certain samples the compositions determined by XRD and RBS differ significantly. This fact, which was interpreted in earlier publications as an indication of a deviation from Vegard's rule, may rather be ascribed to the influence of defects or impurities on the lattice parameters of the alloy. The wide-ranging set of Al1−x In x N films studied allowed furthermore a detailed investigation of the composition leading to lattice-matching of Al1−x In x N/GaN bilayers.

AB - In this work, comparative x-ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) measurements allow a comprehensive characterization of Al1−x In x N thin films grown on GaN. Within the limits of experimental accuracy, and in the compositional range 0.08  <  x  <  0.28, the lattice parameters of the alloys generally obey Vegard's rule, varying linearly with the InN fraction. Results are also consistent with the small deviation from linear behaviour suggested by Darakchieva et al (2008 Appl. Phys. Lett. 93 261908). However, unintentional incorporation of Ga, revealed by atom probe tomography (APT) at levels below the detection limit for RBS, may also affect the lattice parameters. Furthermore, in certain samples the compositions determined by XRD and RBS differ significantly. This fact, which was interpreted in earlier publications as an indication of a deviation from Vegard's rule, may rather be ascribed to the influence of defects or impurities on the lattice parameters of the alloy. The wide-ranging set of Al1−x In x N films studied allowed furthermore a detailed investigation of the composition leading to lattice-matching of Al1−x In x N/GaN bilayers.

KW - comparative x-ray diffraction

KW - Rutherford backscattering spectrometry

KW - Vegard's rule

KW - lattice parameters

KW - gallium

KW - thin films

U2 - 10.1088/1361-6463/aa69dc

DO - 10.1088/1361-6463/aa69dc

M3 - Article

VL - 50

JO - Journal of Physics D: Applied Physics

T2 - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 0022-3727

M1 - 205107

ER -