UV-Raman scattering study of lattice recovery by thermal annealing of Eu+-implanted GaN layers

D. Pastor; S. Hernandez; R. Cusco; L. Artus; R. W. Martin; K. P. O'Donnell; O. Briot; K. Lorenz; E. Alves

doi:10.1016/j.spmi.2006.06.020

UV-Raman scattering study of lattice recovery by thermal annealing of Eu+-implanted GaN layers

D. Pastor, S. Hernandez, R. Cusco, L. Artus, R. W. Martin, K. P. O'Donnell, O. Briot, K. Lorenz, E. Alves

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Lattice recovery of Eu-implanted GaN has been studied by means of Raman scattering under UV excitation. GaN epilayers implanted at 300 keV with doses ranging from 2 x 10(14) to 4 x 10(15) cm(-2) and subsequently annealed at 1000 degrees C for 20 min show an increasing degree of disorder as the implantation dose increases. Higher temperature annealings up to 1300 degrees C were also investigated in samples having an AlN capping layer. Disorder related modes, observed in samples annealed at 1000 degrees C, disappear at higher annealing temperatures, indicating an incomplete lattice recovery at 1000 degrees C. The Raman scattering spectra show resonant A(1)(LO) multiphonon scattering up to sixth order, whose relative intensities depend on the implantation dose. The intensity ratios between multiphonon peaks observed for the highest implantation doses suggest a spread of the resonance, which could be related to a heterogeneous strain distribution, also indicative of incomplete lattice recovery. (c) 2006 Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	440-444
Number of pages	5
Journal	Superlattices and Microstructures
Volume	40
Issue number	4-6
DOIs	https://doi.org/10.1016/j.spmi.2006.06.020
Publication status	Published - 1 Oct 2006

Keywords

rare earth doping
ion beam implantation
Raman scattering

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10.1016/j.spmi.2006.06.020

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@article{0e1fe88cbeac4391bb035f7ca45e8adb,

title = "UV-Raman scattering study of lattice recovery by thermal annealing of Eu+-implanted GaN layers",

abstract = "Lattice recovery of Eu-implanted GaN has been studied by means of Raman scattering under UV excitation. GaN epilayers implanted at 300 keV with doses ranging from 2 x 10(14) to 4 x 10(15) cm(-2) and subsequently annealed at 1000 degrees C for 20 min show an increasing degree of disorder as the implantation dose increases. Higher temperature annealings up to 1300 degrees C were also investigated in samples having an AlN capping layer. Disorder related modes, observed in samples annealed at 1000 degrees C, disappear at higher annealing temperatures, indicating an incomplete lattice recovery at 1000 degrees C. The Raman scattering spectra show resonant A(1)(LO) multiphonon scattering up to sixth order, whose relative intensities depend on the implantation dose. The intensity ratios between multiphonon peaks observed for the highest implantation doses suggest a spread of the resonance, which could be related to a heterogeneous strain distribution, also indicative of incomplete lattice recovery. (c) 2006 Elsevier Ltd. All rights reserved.",

keywords = "rare earth doping, ion beam implantation, Raman scattering",

author = "D. Pastor and S. Hernandez and R. Cusco and L. Artus and Martin, {R. W.} and O'Donnell, {K. P.} and O. Briot and K. Lorenz and E. Alves",

note = "Symposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS, Nice, FRANCE, MAY 29-JUN 02, 2006",

year = "2006",

month = oct,

day = "1",

doi = "10.1016/j.spmi.2006.06.020",

language = "English",

volume = "40",

pages = "440--444",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "4-6",

}

TY - JOUR

T1 - UV-Raman scattering study of lattice recovery by thermal annealing of Eu+-implanted GaN layers

AU - Pastor, D.

AU - Hernandez, S.

AU - Cusco, R.

AU - Artus, L.

AU - Martin, R. W.

AU - O'Donnell, K. P.

AU - Briot, O.

AU - Lorenz, K.

AU - Alves, E.

N1 - Symposium on Material Science and Technology of Wide Bandgap Semiconductors held at the 2006 Spring Meeting of the EMRS, Nice, FRANCE, MAY 29-JUN 02, 2006

PY - 2006/10/1

Y1 - 2006/10/1

N2 - Lattice recovery of Eu-implanted GaN has been studied by means of Raman scattering under UV excitation. GaN epilayers implanted at 300 keV with doses ranging from 2 x 10(14) to 4 x 10(15) cm(-2) and subsequently annealed at 1000 degrees C for 20 min show an increasing degree of disorder as the implantation dose increases. Higher temperature annealings up to 1300 degrees C were also investigated in samples having an AlN capping layer. Disorder related modes, observed in samples annealed at 1000 degrees C, disappear at higher annealing temperatures, indicating an incomplete lattice recovery at 1000 degrees C. The Raman scattering spectra show resonant A(1)(LO) multiphonon scattering up to sixth order, whose relative intensities depend on the implantation dose. The intensity ratios between multiphonon peaks observed for the highest implantation doses suggest a spread of the resonance, which could be related to a heterogeneous strain distribution, also indicative of incomplete lattice recovery. (c) 2006 Elsevier Ltd. All rights reserved.

AB - Lattice recovery of Eu-implanted GaN has been studied by means of Raman scattering under UV excitation. GaN epilayers implanted at 300 keV with doses ranging from 2 x 10(14) to 4 x 10(15) cm(-2) and subsequently annealed at 1000 degrees C for 20 min show an increasing degree of disorder as the implantation dose increases. Higher temperature annealings up to 1300 degrees C were also investigated in samples having an AlN capping layer. Disorder related modes, observed in samples annealed at 1000 degrees C, disappear at higher annealing temperatures, indicating an incomplete lattice recovery at 1000 degrees C. The Raman scattering spectra show resonant A(1)(LO) multiphonon scattering up to sixth order, whose relative intensities depend on the implantation dose. The intensity ratios between multiphonon peaks observed for the highest implantation doses suggest a spread of the resonance, which could be related to a heterogeneous strain distribution, also indicative of incomplete lattice recovery. (c) 2006 Elsevier Ltd. All rights reserved.

KW - rare earth doping

KW - ion beam implantation

KW - Raman scattering

U2 - 10.1016/j.spmi.2006.06.020

DO - 10.1016/j.spmi.2006.06.020

M3 - Article

SN - 0749-6036

VL - 40

SP - 440

EP - 444

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 4-6

ER -

UV-Raman scattering study of lattice recovery by thermal annealing of Eu+-implanted GaN layers

Abstract

Keywords

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