Use of AlInN layers in optical monitoring of growth of GaN-based structures on free-standing GaN substrates

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Abstract

When lattice matched to GaN, the AlInN ternary alloy has a refractive index ~7% lower than that of GaN. This characteristic can be exploited to perform in situ reflectometry during epitaxial growth of GaN-based multilayer structures on free-standing GaN substrates, by insertion of a suitable Al0.82In0.18N layer. The real-time information on growth rates and cumulative layer thicknesses thus obtainable is particularly valuable in the growth of optical resonant cavity structures. We illustrate this capability with reference to the growth of InGaN/GaN multiple quantum-well structures, including a doubly periodic structure with relatively thick GaN spacer layers between groups of wells. Al0.82In0.18N insertion layers can also assist in the fabrication of resonant cavity structures in postgrowth processing, for example, acting as sacrificial layers in a lift-off process exploiting etch selectivity between Al0.82In0.18N and GaN.
LanguageEnglish
Article number151901
JournalApplied Physics Letters
Volume87
DOIs
Publication statusPublished - 2005

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cavity resonators
insertion
ternary alloys
spacers
laminates
selectivity
quantum wells
refractivity
fabrication

Keywords

  • applied physics
  • photonics
  • lasers
  • GAN layers

Cite this

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title = "Use of AlInN layers in optical monitoring of growth of GaN-based structures on free-standing GaN substrates",
abstract = "When lattice matched to GaN, the AlInN ternary alloy has a refractive index ~7{\%} lower than that of GaN. This characteristic can be exploited to perform in situ reflectometry during epitaxial growth of GaN-based multilayer structures on free-standing GaN substrates, by insertion of a suitable Al0.82In0.18N layer. The real-time information on growth rates and cumulative layer thicknesses thus obtainable is particularly valuable in the growth of optical resonant cavity structures. We illustrate this capability with reference to the growth of InGaN/GaN multiple quantum-well structures, including a doubly periodic structure with relatively thick GaN spacer layers between groups of wells. Al0.82In0.18N insertion layers can also assist in the fabrication of resonant cavity structures in postgrowth processing, for example, acting as sacrificial layers in a lift-off process exploiting etch selectivity between Al0.82In0.18N and GaN.",
keywords = "applied physics, photonics, lasers, GAN layers",
author = "I.M. Watson and C. Liu and E. Gu and M.D. Dawson and P.R. Edwards and R.W. Martin",
year = "2005",
doi = "10.1063/1.2089175",
language = "English",
volume = "87",
journal = "Applied Physics Letters",
issn = "0003-6951",

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TY - JOUR

T1 - Use of AlInN layers in optical monitoring of growth of GaN-based structures on free-standing GaN substrates

AU - Watson, I.M.

AU - Liu, C.

AU - Gu, E.

AU - Dawson, M.D.

AU - Edwards, P.R.

AU - Martin, R.W.

PY - 2005

Y1 - 2005

N2 - When lattice matched to GaN, the AlInN ternary alloy has a refractive index ~7% lower than that of GaN. This characteristic can be exploited to perform in situ reflectometry during epitaxial growth of GaN-based multilayer structures on free-standing GaN substrates, by insertion of a suitable Al0.82In0.18N layer. The real-time information on growth rates and cumulative layer thicknesses thus obtainable is particularly valuable in the growth of optical resonant cavity structures. We illustrate this capability with reference to the growth of InGaN/GaN multiple quantum-well structures, including a doubly periodic structure with relatively thick GaN spacer layers between groups of wells. Al0.82In0.18N insertion layers can also assist in the fabrication of resonant cavity structures in postgrowth processing, for example, acting as sacrificial layers in a lift-off process exploiting etch selectivity between Al0.82In0.18N and GaN.

AB - When lattice matched to GaN, the AlInN ternary alloy has a refractive index ~7% lower than that of GaN. This characteristic can be exploited to perform in situ reflectometry during epitaxial growth of GaN-based multilayer structures on free-standing GaN substrates, by insertion of a suitable Al0.82In0.18N layer. The real-time information on growth rates and cumulative layer thicknesses thus obtainable is particularly valuable in the growth of optical resonant cavity structures. We illustrate this capability with reference to the growth of InGaN/GaN multiple quantum-well structures, including a doubly periodic structure with relatively thick GaN spacer layers between groups of wells. Al0.82In0.18N insertion layers can also assist in the fabrication of resonant cavity structures in postgrowth processing, for example, acting as sacrificial layers in a lift-off process exploiting etch selectivity between Al0.82In0.18N and GaN.

KW - applied physics

KW - photonics

KW - lasers

KW - GAN layers

UR - http://dx.doi.org/10.1063/1.2089175

U2 - 10.1063/1.2089175

DO - 10.1063/1.2089175

M3 - Article

VL - 87

JO - Applied Physics Letters

T2 - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

M1 - 151901

ER -