Unraveling unprecedented charge carrier mobility through structure property relationship of four isomers of didodecyl[1]benzothieno[3,2-b][1]benzothiophene

Yusuke Tsutsui, Guillaume Schweicher, Basab Chattopadhyay, Tsuneaki Sakurai, Jean-Baptiste Arlin, C. Ruzié, Almaz Aliev, Artur Ciesielski, Silvia Colella, Alan R. Kennedy, Vincent Lemaur, Yoann Olivier, Rachid Hadji, Lionel Sanguinet, Frederic Castet, Silvio Osella, Dymytro Dudenko, David Beljonne, Jérôme Cornil, Paolo Samori & 2 others Shu Seki, Yves H. Geerts

Research output: Contribution to journalArticle

72 Citations (Scopus)

Abstract

Since the dawn of organic electronics in the 1970’s, academic and industrial research efforts have led to dramatic improvements of the solubility, stability, and electronic properties of organic semiconductors (OSCs).[1, 2] The common benchmark to characterize the electrical performances of OSCs is their charge carrier mobility μ (cm2 V–1 s–1), defined as the drift velocity of the charge carrier (cm s–1) per unit of applied electric field (V cm–1). Reaching high mobilities in OSCs is highly desirable as it allows faster operation of transistors and energy savings by reduced calculation times.[2, 3] However, OSCs performances (conventional values usually range from 1 to 10 cm2 V–1 s–1, with highest values obtained with single-crystal devices mostly exempt of structural defects) are still not comparable to that of state-of-the-art inorganic semiconductors (e.g. metal oxides with µ = 20-50 cm2 V–1 s–1 and polycrystalline silicon with µ > 100 cm2 V–1 s–1) thereby hampering important potential technological applications such as flexible organic light-emitting diode (OLED) displays and wearable electronics.[3, 4]
LanguageEnglish
Pages7106-7114
Number of pages9
JournalAdvanced Materials
Volume28
Issue number33
Early online date25 May 2016
DOIs
Publication statusPublished - 7 Sep 2016

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Semiconducting organic compounds
Carrier mobility
Charge carriers
Isomers
Industrial research
Organic light emitting diodes (OLED)
Polysilicon
Electronic properties
Oxides
Energy conservation
Transistors
Electronic equipment
Solubility
Metals
Display devices
Electric fields
Single crystals
Semiconductor materials
Defects
benzothiophene

Keywords

  • organic semiconductors
  • electrical performances
  • organic light emitting diodes

Cite this

Tsutsui, Yusuke ; Schweicher, Guillaume ; Chattopadhyay, Basab ; Sakurai, Tsuneaki ; Arlin, Jean-Baptiste ; Ruzié, C. ; Aliev, Almaz ; Ciesielski, Artur ; Colella, Silvia ; Kennedy, Alan R. ; Lemaur, Vincent ; Olivier, Yoann ; Hadji, Rachid ; Sanguinet, Lionel ; Castet, Frederic ; Osella, Silvio ; Dudenko, Dymytro ; Beljonne, David ; Cornil, Jérôme ; Samori, Paolo ; Seki, Shu ; Geerts, Yves H. / Unraveling unprecedented charge carrier mobility through structure property relationship of four isomers of didodecyl[1]benzothieno[3,2-b][1]benzothiophene. In: Advanced Materials. 2016 ; Vol. 28, No. 33. pp. 7106-7114.
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abstract = "Since the dawn of organic electronics in the 1970’s, academic and industrial research efforts have led to dramatic improvements of the solubility, stability, and electronic properties of organic semiconductors (OSCs).[1, 2] The common benchmark to characterize the electrical performances of OSCs is their charge carrier mobility μ (cm2 V–1 s–1), defined as the drift velocity of the charge carrier (cm s–1) per unit of applied electric field (V cm–1). Reaching high mobilities in OSCs is highly desirable as it allows faster operation of transistors and energy savings by reduced calculation times.[2, 3] However, OSCs performances (conventional values usually range from 1 to 10 cm2 V–1 s–1, with highest values obtained with single-crystal devices mostly exempt of structural defects) are still not comparable to that of state-of-the-art inorganic semiconductors (e.g. metal oxides with µ = 20-50 cm2 V–1 s–1 and polycrystalline silicon with µ > 100 cm2 V–1 s–1) thereby hampering important potential technological applications such as flexible organic light-emitting diode (OLED) displays and wearable electronics.[3, 4]",
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Tsutsui, Y, Schweicher, G, Chattopadhyay, B, Sakurai, T, Arlin, J-B, Ruzié, C, Aliev, A, Ciesielski, A, Colella, S, Kennedy, AR, Lemaur, V, Olivier, Y, Hadji, R, Sanguinet, L, Castet, F, Osella, S, Dudenko, D, Beljonne, D, Cornil, J, Samori, P, Seki, S & Geerts, YH 2016, 'Unraveling unprecedented charge carrier mobility through structure property relationship of four isomers of didodecyl[1]benzothieno[3,2-b][1]benzothiophene' Advanced Materials, vol. 28, no. 33, pp. 7106-7114. https://doi.org/10.1002/adma.201601285

Unraveling unprecedented charge carrier mobility through structure property relationship of four isomers of didodecyl[1]benzothieno[3,2-b][1]benzothiophene. / Tsutsui, Yusuke; Schweicher, Guillaume; Chattopadhyay, Basab; Sakurai, Tsuneaki; Arlin, Jean-Baptiste; Ruzié, C.; Aliev, Almaz; Ciesielski, Artur; Colella, Silvia; Kennedy, Alan R.; Lemaur, Vincent; Olivier, Yoann; Hadji, Rachid; Sanguinet, Lionel; Castet, Frederic; Osella, Silvio; Dudenko, Dymytro; Beljonne, David; Cornil, Jérôme; Samori, Paolo; Seki, Shu; Geerts, Yves H.

In: Advanced Materials, Vol. 28, No. 33, 07.09.2016, p. 7106-7114.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Unraveling unprecedented charge carrier mobility through structure property relationship of four isomers of didodecyl[1]benzothieno[3,2-b][1]benzothiophene

AU - Tsutsui, Yusuke

AU - Schweicher, Guillaume

AU - Chattopadhyay, Basab

AU - Sakurai, Tsuneaki

AU - Arlin, Jean-Baptiste

AU - Ruzié, C.

AU - Aliev, Almaz

AU - Ciesielski, Artur

AU - Colella, Silvia

AU - Kennedy, Alan R.

AU - Lemaur, Vincent

AU - Olivier, Yoann

AU - Hadji, Rachid

AU - Sanguinet, Lionel

AU - Castet, Frederic

AU - Osella, Silvio

AU - Dudenko, Dymytro

AU - Beljonne, David

AU - Cornil, Jérôme

AU - Samori, Paolo

AU - Seki, Shu

AU - Geerts, Yves H.

PY - 2016/9/7

Y1 - 2016/9/7

N2 - Since the dawn of organic electronics in the 1970’s, academic and industrial research efforts have led to dramatic improvements of the solubility, stability, and electronic properties of organic semiconductors (OSCs).[1, 2] The common benchmark to characterize the electrical performances of OSCs is their charge carrier mobility μ (cm2 V–1 s–1), defined as the drift velocity of the charge carrier (cm s–1) per unit of applied electric field (V cm–1). Reaching high mobilities in OSCs is highly desirable as it allows faster operation of transistors and energy savings by reduced calculation times.[2, 3] However, OSCs performances (conventional values usually range from 1 to 10 cm2 V–1 s–1, with highest values obtained with single-crystal devices mostly exempt of structural defects) are still not comparable to that of state-of-the-art inorganic semiconductors (e.g. metal oxides with µ = 20-50 cm2 V–1 s–1 and polycrystalline silicon with µ > 100 cm2 V–1 s–1) thereby hampering important potential technological applications such as flexible organic light-emitting diode (OLED) displays and wearable electronics.[3, 4]

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KW - organic semiconductors

KW - electrical performances

KW - organic light emitting diodes

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DO - 10.1002/adma.201601285

M3 - Article

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SP - 7106

EP - 7114

JO - Advanced Materials

T2 - Advanced Materials

JF - Advanced Materials

SN - 1521-4095

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