Uniform emission from matrix-addressable micro-pixellated InGaN light-emitting diodes

Z. Gong; H.X. Jiang; E. Gu; M.D. Dawson

doi:10.1109/LEOS.2006.278804

Uniform emission from matrix-addressable micro-pixellated InGaN light-emitting diodes

Z. Gong, H.X. Jiang, E. Gu, M.D. Dawson

Research output: Chapter in Book/Report/Conference proceeding › Chapter

2 Citations (Scopus)

Abstract

The main causes of emission non-uniformity from matrix-addressable micro-pixellated light-emitting diodes (LED) have been identified. By using a new fabrication process, high-density InGaN micro-LEDs with improved emission uniformity and light output were successfully fabricated.

Original language	English
Title of host publication	Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Pages	32-33
Number of pages	1
DOIs	https://doi.org/10.1109/LEOS.2006.278804
Publication status	Published - 30 Oct 2006

Keywords

semiconductors
gallium compounds
indium compounds
light emitting diodes
micro-optics
optical fabrication

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10.1109/LEOS.2006.278804

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title = "Uniform emission from matrix-addressable micro-pixellated InGaN light-emitting diodes",

abstract = "The main causes of emission non-uniformity from matrix-addressable micro-pixellated light-emitting diodes (LED) have been identified. By using a new fabrication process, high-density InGaN micro-LEDs with improved emission uniformity and light output were successfully fabricated.",

keywords = "semiconductors, gallium compounds, indium compounds, light emitting diodes, micro-optics, optical fabrication",

author = "Z. Gong and H.X. Jiang and E. Gu and M.D. Dawson",

year = "2006",

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day = "30",

doi = "10.1109/LEOS.2006.278804",

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T1 - Uniform emission from matrix-addressable micro-pixellated InGaN light-emitting diodes

AU - Gong, Z.

AU - Jiang, H.X.

AU - Gu, E.

AU - Dawson, M.D.

PY - 2006/10/30

Y1 - 2006/10/30

N2 - The main causes of emission non-uniformity from matrix-addressable micro-pixellated light-emitting diodes (LED) have been identified. By using a new fabrication process, high-density InGaN micro-LEDs with improved emission uniformity and light output were successfully fabricated.

AB - The main causes of emission non-uniformity from matrix-addressable micro-pixellated light-emitting diodes (LED) have been identified. By using a new fabrication process, high-density InGaN micro-LEDs with improved emission uniformity and light output were successfully fabricated.

KW - semiconductors

KW - gallium compounds

KW - indium compounds

KW - light emitting diodes

KW - micro-optics

KW - optical fabrication

UR - http://dx.doi.org/10.1109/LEOS.2006.278804

U2 - 10.1109/LEOS.2006.278804

DO - 10.1109/LEOS.2006.278804

M3 - Chapter

SN - 0-7803-9555-7

SP - 32

EP - 33

BT - Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE

ER -

Uniform emission from matrix-addressable micro-pixellated InGaN light-emitting diodes

Abstract

Keywords

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