Uniform emission from matrix-addressable micro-pixellated InGaN light-emitting diodes

Z. Gong, H.X. Jiang, E. Gu, M.D. Dawson

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

The main causes of emission non-uniformity from matrix-addressable micro-pixellated light-emitting diodes (LED) have been identified. By using a new fabrication process, high-density InGaN micro-LEDs with improved emission uniformity and light output were successfully fabricated.
LanguageEnglish
Title of host publicationLasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Pages32-33
Number of pages1
DOIs
Publication statusPublished - 30 Oct 2006

Fingerprint

light emitting diodes
matrices
nonuniformity
fabrication
causes
output

Keywords

  • semiconductors
  • gallium compounds
  • indium compounds
  • light emitting diodes
  • micro-optics
  • optical fabrication

Cite this

Gong, Z., Jiang, H. X., Gu, E., & Dawson, M. D. (2006). Uniform emission from matrix-addressable micro-pixellated InGaN light-emitting diodes. In Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE (pp. 32-33) https://doi.org/10.1109/LEOS.2006.278804
Gong, Z. ; Jiang, H.X. ; Gu, E. ; Dawson, M.D. / Uniform emission from matrix-addressable micro-pixellated InGaN light-emitting diodes. Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE. 2006. pp. 32-33
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Gong, Z, Jiang, HX, Gu, E & Dawson, MD 2006, Uniform emission from matrix-addressable micro-pixellated InGaN light-emitting diodes. in Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE. pp. 32-33. https://doi.org/10.1109/LEOS.2006.278804

Uniform emission from matrix-addressable micro-pixellated InGaN light-emitting diodes. / Gong, Z.; Jiang, H.X.; Gu, E.; Dawson, M.D.

Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE. 2006. p. 32-33.

Research output: Chapter in Book/Report/Conference proceedingChapter

TY - CHAP

T1 - Uniform emission from matrix-addressable micro-pixellated InGaN light-emitting diodes

AU - Gong, Z.

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AU - Gu, E.

AU - Dawson, M.D.

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N2 - The main causes of emission non-uniformity from matrix-addressable micro-pixellated light-emitting diodes (LED) have been identified. By using a new fabrication process, high-density InGaN micro-LEDs with improved emission uniformity and light output were successfully fabricated.

AB - The main causes of emission non-uniformity from matrix-addressable micro-pixellated light-emitting diodes (LED) have been identified. By using a new fabrication process, high-density InGaN micro-LEDs with improved emission uniformity and light output were successfully fabricated.

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KW - gallium compounds

KW - indium compounds

KW - light emitting diodes

KW - micro-optics

KW - optical fabrication

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DO - 10.1109/LEOS.2006.278804

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BT - Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE

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Gong Z, Jiang HX, Gu E, Dawson MD. Uniform emission from matrix-addressable micro-pixellated InGaN light-emitting diodes. In Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE. 2006. p. 32-33 https://doi.org/10.1109/LEOS.2006.278804