Uniform emission from matrix-addressable micro-pixellated InGaN light-emitting diodes

Z. Gong, H.X. Jiang, E. Gu, M.D. Dawson

Research output: Chapter in Book/Report/Conference proceedingChapter

2 Citations (Scopus)

Abstract

The main causes of emission non-uniformity from matrix-addressable micro-pixellated light-emitting diodes (LED) have been identified. By using a new fabrication process, high-density InGaN micro-LEDs with improved emission uniformity and light output were successfully fabricated.
Original languageEnglish
Title of host publicationLasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Pages32-33
Number of pages1
DOIs
Publication statusPublished - 30 Oct 2006

Keywords

  • semiconductors
  • gallium compounds
  • indium compounds
  • light emitting diodes
  • micro-optics
  • optical fabrication

Cite this

Gong, Z., Jiang, H. X., Gu, E., & Dawson, M. D. (2006). Uniform emission from matrix-addressable micro-pixellated InGaN light-emitting diodes. In Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE (pp. 32-33) https://doi.org/10.1109/LEOS.2006.278804