Unified rate law for the thermal and light-induced annealing of defects in a-Si:H

Helena Gleskova, S. Wagner

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Abstract

This chapter looks at unified rate law for the thermal and light-induced annealing of defects in a-Si:H
Original languageEnglish
Title of host publication22nd International conference on physics of semiconductors
EditorsD. J. Lockwood
Place of PublicationSingapore
Pages2701-2704
Number of pages4
Volume3
Publication statusPublished - 1995
Event22nd International Conference on the Physics of Semiconductors - Vancouver, Canada
Duration: 15 Aug 199419 Aug 1994

Conference

Conference22nd International Conference on the Physics of Semiconductors
CountryCanada
CityVancouver
Period15/08/9419/08/94

Keywords

  • unified rate law
  • thermal
  • light-induced annealing
  • defects
  • a-Si:H

Cite this

Gleskova, H., & Wagner, S. (1995). Unified rate law for the thermal and light-induced annealing of defects in a-Si:H. In D. J. Lockwood (Ed.), 22nd International conference on physics of semiconductors (Vol. 3, pp. 2701-2704).