Abstract
This chapter looks at unified rate law for the thermal and light-induced annealing of defects in a-Si:H
| Original language | English |
|---|---|
| Title of host publication | 22nd International conference on physics of semiconductors |
| Editors | D. J. Lockwood |
| Place of Publication | Singapore |
| Pages | 2701-2704 |
| Number of pages | 4 |
| Volume | 3 |
| Publication status | Published - 1995 |
| Event | 22nd International Conference on the Physics of Semiconductors - Vancouver, Canada Duration: 15 Aug 1994 → 19 Aug 1994 |
Conference
| Conference | 22nd International Conference on the Physics of Semiconductors |
|---|---|
| Country/Territory | Canada |
| City | Vancouver |
| Period | 15/08/94 → 19/08/94 |
Keywords
- unified rate law
- thermal
- light-induced annealing
- defects
- a-Si:H