Unified rate law for the thermal and light-induced annealing of defects in a-Si:H

Helena Gleskova, S. Wagner

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Abstract

This chapter looks at unified rate law for the thermal and light-induced annealing of defects in a-Si:H
LanguageEnglish
Title of host publication22nd International conference on physics of semiconductors
EditorsD. J. Lockwood
Place of PublicationSingapore
Pages2701-2704
Number of pages4
Volume3
Publication statusPublished - 1995
Event22nd International Conference on the Physics of Semiconductors - Vancouver, Canada
Duration: 15 Aug 199419 Aug 1994

Conference

Conference22nd International Conference on the Physics of Semiconductors
CountryCanada
CityVancouver
Period15/08/9419/08/94

Fingerprint

annealing
defects

Keywords

  • unified rate law
  • thermal
  • light-induced annealing
  • defects
  • a-Si:H

Cite this

Gleskova, H., & Wagner, S. (1995). Unified rate law for the thermal and light-induced annealing of defects in a-Si:H. In D. J. Lockwood (Ed.), 22nd International conference on physics of semiconductors (Vol. 3, pp. 2701-2704). Singapore.
Gleskova, Helena ; Wagner, S. / Unified rate law for the thermal and light-induced annealing of defects in a-Si:H. 22nd International conference on physics of semiconductors. editor / D. J. Lockwood. Vol. 3 Singapore, 1995. pp. 2701-2704
@inproceedings{c596798d5c3d45a4aedaad536a4066f2,
title = "Unified rate law for the thermal and light-induced annealing of defects in a-Si:H",
abstract = "This chapter looks at unified rate law for the thermal and light-induced annealing of defects in a-Si:H",
keywords = "unified rate law, thermal, light-induced annealing , defects, a-Si:H",
author = "Helena Gleskova and S. Wagner",
year = "1995",
language = "English",
isbn = "9810220219",
volume = "3",
pages = "2701--2704",
editor = "Lockwood, {D. J.}",
booktitle = "22nd International conference on physics of semiconductors",

}

Gleskova, H & Wagner, S 1995, Unified rate law for the thermal and light-induced annealing of defects in a-Si:H. in DJ Lockwood (ed.), 22nd International conference on physics of semiconductors. vol. 3, Singapore, pp. 2701-2704, 22nd International Conference on the Physics of Semiconductors, Vancouver, Canada, 15/08/94.

Unified rate law for the thermal and light-induced annealing of defects in a-Si:H. / Gleskova, Helena; Wagner, S.

22nd International conference on physics of semiconductors. ed. / D. J. Lockwood. Vol. 3 Singapore, 1995. p. 2701-2704.

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

TY - GEN

T1 - Unified rate law for the thermal and light-induced annealing of defects in a-Si:H

AU - Gleskova, Helena

AU - Wagner, S.

PY - 1995

Y1 - 1995

N2 - This chapter looks at unified rate law for the thermal and light-induced annealing of defects in a-Si:H

AB - This chapter looks at unified rate law for the thermal and light-induced annealing of defects in a-Si:H

KW - unified rate law

KW - thermal

KW - light-induced annealing

KW - defects

KW - a-Si:H

M3 - Conference contribution book

SN - 9810220219

VL - 3

SP - 2701

EP - 2704

BT - 22nd International conference on physics of semiconductors

A2 - Lockwood, D. J.

CY - Singapore

ER -

Gleskova H, Wagner S. Unified rate law for the thermal and light-induced annealing of defects in a-Si:H. In Lockwood DJ, editor, 22nd International conference on physics of semiconductors. Vol. 3. Singapore. 1995. p. 2701-2704