Abstract
We report on room-temperature continuous-wave operation and single-mode lasing of microdisk and microring lasers with radii as small as 7 mum. The waveguide sidewall roughness was minimized by an optimized fabrication process using hydrogen silsesquioxane e-beam resist and Cl 2-CH 3-H 2 inductively coupled plasma etching. The devices show unidirectional bistability between the counterpropagating modes for radii larger than 30 mu m and a strong hybrid output polarization for radii smaller than 15 mum with a transverse-magnetic component of approximately 30%.
Original language | English |
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Pages (from-to) | 88-90 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 21 |
Issue number | 2 |
DOIs | |
Publication status | Published - 15 Jan 2009 |
Keywords
- gallium arsenide
- III-V semiconductors
- microdisc lasers
- sputter etching