Ultrathin CdSe quantum wells

K.G. Chinyama, I.V. Bradley, K.P. O'Donnell, P.I. Kuznetsov, A.P. Chernushich, V. Luzanov

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We report a survey of samples containing ultrathin layers of CdSe embedded in ZnSe or ZnS0.06Se0.94 matrices. CdSe single quantum wells (SQW) with well widths in the range 0.3-3 ML show several bands in the photon energy range from 1.7 to 2.4 eV. Similar bands have been attributed recently to self-organised quantum dots. Temperature-dependent photoluminescence (PL) shows that the bands in our samples vanish, without significant peak shift, at moderately high temperatures. Preliminary time-resolved PL shows that they also have relatively long lifetimes (ca. 30-250 ns). In all samples, the SQW exciton band lying at higher energies shows line narrowing with increasing temperature. Variations due to quantum-well thickness induce a correlation between the luminescence peak energy and the optical bandwidth which may be used to systematise our observations.

Original languageEnglish
Pages (from-to)298-301
Number of pages4
JournalJournal of Crystal Growth
Volume184-185
DOIs
Publication statusPublished - 2 Feb 1998

Keywords

  • correlation
  • deep bands
  • exciton bands
  • lifetime
  • line narrowing
  • photoluminescence

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    Chinyama, K. G., Bradley, I. V., O'Donnell, K. P., Kuznetsov, P. I., Chernushich, A. P., & Luzanov, V. (1998). Ultrathin CdSe quantum wells. Journal of Crystal Growth, 184-185, 298-301. https://doi.org/10.1016/S0022-0248(98)80063-8