Ultrafast pulse generation in semiconductor lasers

Marc Sorel; Michael J. Strain

doi:10.1109/PS.2015.7328997

Ultrafast pulse generation in semiconductor lasers

Marc Sorel, Michael J. Strain

Institute Of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

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Abstract

Integrated semiconductor laser devices are presented as extremely compact generators of ultra-short pulse trains. Control is demonstrated on a wide range of emission parameters including wavelength, pulse duration, repetition rate and emitted power. All device geometries require simple drive electronics, consisting of only constant current injection and reverse bias voltage control.

Original language	English
Title of host publication	2015 International Conference on Photonics in Switching, PS 2015
Place of Publication	Piscataway, NJ.
Publisher	IEEE
Pages	193-195
Number of pages	3
ISBN (Print)	9781479988211
DOIs	https://doi.org/10.1109/PS.2015.7328997
Publication status	Published - 13 Nov 2015
Event	International Conference on Photonics in Switching, PS 2015 - Florence, Italy Duration: 22 Sept 2015 → 25 Sept 2015

Conference

Conference	International Conference on Photonics in Switching, PS 2015
Country/Territory	Italy
City	Florence
Period	22/09/15 → 25/09/15

Keywords

Bragg gratings
cavity resonators
geometry
optical pulse generation
photonics
strain
system-on-chip

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10.1109/PS.2015.7328997

Sorel-Strain-IEEE-2015-Ultrafast-pulse-generation-in-semiconductorAccepted author manuscript, 746 KB

Cite this

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title = "Ultrafast pulse generation in semiconductor lasers",

abstract = "Integrated semiconductor laser devices are presented as extremely compact generators of ultra-short pulse trains. Control is demonstrated on a wide range of emission parameters including wavelength, pulse duration, repetition rate and emitted power. All device geometries require simple drive electronics, consisting of only constant current injection and reverse bias voltage control.",

keywords = "Bragg gratings, cavity resonators, geometry, optical pulse generation, photonics, strain, system-on-chip",

author = "Marc Sorel and Strain, {Michael J.}",

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doi = "10.1109/PS.2015.7328997",

language = "English",

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AU - Sorel, Marc

AU - Strain, Michael J.

PY - 2015/11/13

Y1 - 2015/11/13

N2 - Integrated semiconductor laser devices are presented as extremely compact generators of ultra-short pulse trains. Control is demonstrated on a wide range of emission parameters including wavelength, pulse duration, repetition rate and emitted power. All device geometries require simple drive electronics, consisting of only constant current injection and reverse bias voltage control.

AB - Integrated semiconductor laser devices are presented as extremely compact generators of ultra-short pulse trains. Control is demonstrated on a wide range of emission parameters including wavelength, pulse duration, repetition rate and emitted power. All device geometries require simple drive electronics, consisting of only constant current injection and reverse bias voltage control.

KW - Bragg gratings

KW - cavity resonators

KW - geometry

KW - optical pulse generation

KW - photonics

KW - strain

KW - system-on-chip

UR - http://www.scopus.com/inward/record.url?scp=84962634236&partnerID=8YFLogxK

UR - http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=7307878

UR - http://www.ps2015.com/

U2 - 10.1109/PS.2015.7328997

DO - 10.1109/PS.2015.7328997

M3 - Conference contribution book

AN - SCOPUS:84962634236

SN - 9781479988211

SP - 193

EP - 195

BT - 2015 International Conference on Photonics in Switching, PS 2015

PB - IEEE

CY - Piscataway, NJ.

T2 - International Conference on Photonics in Switching, PS 2015

Y2 - 22 September 2015 through 25 September 2015

ER -

Ultrafast pulse generation in semiconductor lasers

Abstract

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Keywords

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