This paper presents a simple yet powerful two-photon fluorescence imagining technique for minimally invasive evaluation of the gallium nitride based-structure deep within a Micro-LED array. By exciting the GaN-based heterostructure via two-photon absorption, the resulting fluorescence can be used to generate optical sections of the active medium within the sample.
|Title of host publication||Microscopy of Semiconducting Materials 2003: Proceedings of the Institute of Physics Conference|
|Place of Publication||Bristol, United Kingdom|
|Number of pages||3|
|Publication status||Published - 2003|
|Name||Institute of Physics conference series|
- two-photon fluorescence imagining
- gallium nitride
- two-photon absorption
McConnell, G., Gu, E., Griffin, C., Jeon, C. W., Choi, H. W., Gurney, A. M., Girkin, J. M., Dawson, M. D., Cullis, A. G. (Ed.), & Midgley, P. A. (Ed.) (2003). Two-photon fluorescence imaging of GaN micro-LED arrays. In Microscopy of Semiconducting Materials 2003: Proceedings of the Institute of Physics Conference (Vol. 180, pp. 341-344). (Institute of Physics conference series)..