Two-photon absorption in site-controlled InGaN/GaN quantum dots

A.F. Jarjour; R.A. Taylor; R.W. Martin; I.M. Watson

doi:10.1002/pssc.200562028

Two-photon absorption in site-controlled InGaN/GaN quantum dots

A.F. Jarjour, R.A. Taylor, R.W. Martin, I.M. Watson

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5 Citations (Scopus)

Abstract

We present micro-photoluminescence measurements on single site-controlled InGaN/GaN quantum dots using two-photon excitation Furthermore, measurements of photoluminescence excitation and time-resolved photoluminescence are also presented. We show that two-photon excitation results in total suppression of the emission from the underlying quantum well, to which the quantum dots are couple, and yet strong quantum dot emission. We attribute this effect to the enhancement of the two-photon absorption in the quantum dots as a result of the zero-dimensional confinement compared to that of the quantum wells.

Original language	English
Pages (from-to)	3843-3846
Number of pages	4
Journal	Physica Status Solidi C
Volume	2
Issue number	11
DOIs	https://doi.org/10.1002/pssc.200562028
Publication status	Published - 8 Nov 2005

Keywords

42.65.–k
78.67.Hc
78.47.+p;78.55.Cr

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10.1002/pssc.200562028

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@article{16f0b2233f1146a898453584bf3fc297,

title = "Two-photon absorption in site-controlled InGaN/GaN quantum dots",

abstract = "We present micro-photoluminescence measurements on single site-controlled InGaN/GaN quantum dots using two-photon excitation Furthermore, measurements of photoluminescence excitation and time-resolved photoluminescence are also presented. We show that two-photon excitation results in total suppression of the emission from the underlying quantum well, to which the quantum dots are couple, and yet strong quantum dot emission. We attribute this effect to the enhancement of the two-photon absorption in the quantum dots as a result of the zero-dimensional confinement compared to that of the quantum wells. ",

keywords = "42.65.–k, 78.67.Hc, 78.47.+p;78.55.Cr",

author = "A.F. Jarjour and R.A. Taylor and R.W. Martin and I.M. Watson",

year = "2005",

month = nov,

day = "8",

doi = "10.1002/pssc.200562028",

language = "English",

volume = "2",

pages = "3843--3846",

journal = "Physica Status Solidi C",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "11",

}

TY - JOUR

T1 - Two-photon absorption in site-controlled InGaN/GaN quantum dots

AU - Jarjour, A.F.

AU - Taylor, R.A.

AU - Martin, R.W.

AU - Watson, I.M.

PY - 2005/11/8

Y1 - 2005/11/8

N2 - We present micro-photoluminescence measurements on single site-controlled InGaN/GaN quantum dots using two-photon excitation Furthermore, measurements of photoluminescence excitation and time-resolved photoluminescence are also presented. We show that two-photon excitation results in total suppression of the emission from the underlying quantum well, to which the quantum dots are couple, and yet strong quantum dot emission. We attribute this effect to the enhancement of the two-photon absorption in the quantum dots as a result of the zero-dimensional confinement compared to that of the quantum wells.

AB - We present micro-photoluminescence measurements on single site-controlled InGaN/GaN quantum dots using two-photon excitation Furthermore, measurements of photoluminescence excitation and time-resolved photoluminescence are also presented. We show that two-photon excitation results in total suppression of the emission from the underlying quantum well, to which the quantum dots are couple, and yet strong quantum dot emission. We attribute this effect to the enhancement of the two-photon absorption in the quantum dots as a result of the zero-dimensional confinement compared to that of the quantum wells.

KW - 42.65.–k

KW - 78.67.Hc

KW - 78.47.+p;78.55.Cr

U2 - 10.1002/pssc.200562028

DO - 10.1002/pssc.200562028

M3 - Article

SN - 1862-6351

VL - 2

SP - 3843

EP - 3846

JO - Physica Status Solidi C

JF - Physica Status Solidi C

IS - 11

ER -

Two-photon absorption in site-controlled InGaN/GaN quantum dots

Abstract

Keywords

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