Two-photon absorption from single InGaN/GaN quantum dots

A.F. Jarjour; A.M. Green; T.J. Parker; R.A. Taylor; R.A. Oliver; G.A.D. Briggs; M.J. Kappers; C.J. Humphreys; R.W. Martin; I.M. Watson

doi:10.1016/j.physe.2005.12.022

Two-photon absorption from single InGaN/GaN quantum dots

A.F. Jarjour, A.M. Green, T.J. Parker, R.A. Taylor, R.A. Oliver, G.A.D. Briggs, M.J. Kappers, C.J. Humphreys, R.W. Martin, I.M. Watson

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Abstract

We present a study of the time-integrated and time-resolved photoluminescence properties of single-InGaN/GaN quantum dots (QDs) using two-photon spectroscopy. Two samples containing QDs produced by different growth techniques are examined. We find that two-photon excitation results in the suppression of the emission from the underlying quantum well to which the QDs are coupled and yet relatively strong QD emission is observed. This effect is explained in terms of the enhancement of two-photon absorption in QDs due to the full confinement of carriers. Furthermore, evidence of the presence of excited states is revealed from the two-photon photoluminescence excitation spectra presented in the study.

Original language	English
Pages (from-to)	119-122
Number of pages	3
Journal	Physica E: Low-dimensional Systems and Nanostructures
Volume	32
Issue number	1-2
DOIs	https://doi.org/10.1016/j.physe.2005.12.022
Publication status	Published - 2006

Keywords

InGaN
quantum dot
two-photon absorption
photoluminescence
time-resolved
photoluminescence excitation

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10.1016/j.physe.2005.12.022

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@article{bbc0c7085d62466580e1c3c8ba533aed,

title = "Two-photon absorption from single InGaN/GaN quantum dots",

abstract = "We present a study of the time-integrated and time-resolved photoluminescence properties of single-InGaN/GaN quantum dots (QDs) using two-photon spectroscopy. Two samples containing QDs produced by different growth techniques are examined. We find that two-photon excitation results in the suppression of the emission from the underlying quantum well to which the QDs are coupled and yet relatively strong QD emission is observed. This effect is explained in terms of the enhancement of two-photon absorption in QDs due to the full confinement of carriers. Furthermore, evidence of the presence of excited states is revealed from the two-photon photoluminescence excitation spectra presented in the study. ",

keywords = "InGaN, quantum dot, two-photon absorption, photoluminescence, time-resolved, photoluminescence excitation",

author = "A.F. Jarjour and A.M. Green and T.J. Parker and R.A. Taylor and R.A. Oliver and G.A.D. Briggs and M.J. Kappers and C.J. Humphreys and R.W. Martin and I.M. Watson",

year = "2006",

doi = "10.1016/j.physe.2005.12.022",

language = "English",

volume = "32",

pages = "119--122",

journal = "Physica E: Low-dimensional Systems and Nanostructures",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Two-photon absorption from single InGaN/GaN quantum dots

AU - Jarjour, A.F.

AU - Green, A.M.

AU - Parker, T.J.

AU - Taylor, R.A.

AU - Oliver, R.A.

AU - Briggs, G.A.D.

AU - Kappers, M.J.

AU - Humphreys, C.J.

AU - Martin, R.W.

AU - Watson, I.M.

PY - 2006

Y1 - 2006

N2 - We present a study of the time-integrated and time-resolved photoluminescence properties of single-InGaN/GaN quantum dots (QDs) using two-photon spectroscopy. Two samples containing QDs produced by different growth techniques are examined. We find that two-photon excitation results in the suppression of the emission from the underlying quantum well to which the QDs are coupled and yet relatively strong QD emission is observed. This effect is explained in terms of the enhancement of two-photon absorption in QDs due to the full confinement of carriers. Furthermore, evidence of the presence of excited states is revealed from the two-photon photoluminescence excitation spectra presented in the study.

AB - We present a study of the time-integrated and time-resolved photoluminescence properties of single-InGaN/GaN quantum dots (QDs) using two-photon spectroscopy. Two samples containing QDs produced by different growth techniques are examined. We find that two-photon excitation results in the suppression of the emission from the underlying quantum well to which the QDs are coupled and yet relatively strong QD emission is observed. This effect is explained in terms of the enhancement of two-photon absorption in QDs due to the full confinement of carriers. Furthermore, evidence of the presence of excited states is revealed from the two-photon photoluminescence excitation spectra presented in the study.

KW - InGaN

KW - quantum dot

KW - two-photon absorption

KW - photoluminescence

KW - time-resolved

KW - photoluminescence excitation

U2 - 10.1016/j.physe.2005.12.022

DO - 10.1016/j.physe.2005.12.022

M3 - Article

VL - 32

SP - 119

EP - 122

JO - Physica E: Low-dimensional Systems and Nanostructures

JF - Physica E: Low-dimensional Systems and Nanostructures

IS - 1-2

ER -

Two-photon absorption from single InGaN/GaN quantum dots

Abstract

Keywords

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