Abstract
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the Third International Conference Advances in Computing, Communication and Information Technology- CCIT 2015 |
| Editors | Rakesh Kumar |
| Pages | 25-29 |
| Number of pages | 5 |
| DOIs | |
| Publication status | Published - 22 Jun 2015 |
| Event | Third International Conference on Advances in Computing, Communication - CCIT 2015 - Birmingham, United Kingdom Duration: 26 May 2015 → 27 May 2015 |
Conference
| Conference | Third International Conference on Advances in Computing, Communication - CCIT 2015 |
|---|---|
| Country | United Kingdom |
| City | Birmingham |
| Period | 26/05/15 → 27/05/15 |
Fingerprint
Keywords
- gallium alloys
- lasing on silicon
- integrated
- telecommunication
Cite this
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Towards lasing on a silicon chip : gallium and its alloy or rare earth doped gallium nitride as the solution? / Ahmed, Md Shakil; Glesk, Ivan.
Proceedings of the Third International Conference Advances in Computing, Communication and Information Technology- CCIT 2015. ed. / Rakesh Kumar. 2015. p. 25-29.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book
TY - GEN
T1 - Towards lasing on a silicon chip
T2 - gallium and its alloy or rare earth doped gallium nitride as the solution?
AU - Ahmed, Md Shakil
AU - Glesk, Ivan
PY - 2015/6/22
Y1 - 2015/6/22
N2 - Achieving effective solution for lasing on Silicon is a critical and important step for the successful implementation of Photonic Integrated Circuits in our quest to develop the next generation of ultrahigh bandwidth communication devices. In this overview paper various options of hybrid, monolithic and rare earth doping are discussed with the aim to offer the latest state-of-the-art on this topic. Monolithic integration of particular composition of Gallium and its alloys having the direct bandgap property and lattice constant similarity with silicon has been shown as promising. This is then compared with a Rare Earth doped Gallium Nitride approach as another possibility for the ‘lasing on silicon’ solution.
AB - Achieving effective solution for lasing on Silicon is a critical and important step for the successful implementation of Photonic Integrated Circuits in our quest to develop the next generation of ultrahigh bandwidth communication devices. In this overview paper various options of hybrid, monolithic and rare earth doping are discussed with the aim to offer the latest state-of-the-art on this topic. Monolithic integration of particular composition of Gallium and its alloys having the direct bandgap property and lattice constant similarity with silicon has been shown as promising. This is then compared with a Rare Earth doped Gallium Nitride approach as another possibility for the ‘lasing on silicon’ solution.
KW - gallium alloys
KW - lasing on silicon
KW - integrated
KW - telecommunication
UR - http://www.seekdl.org/conferences_page_papers.php?confid=206
U2 - 10.15224/978-1-63248-061-3-16
DO - 10.15224/978-1-63248-061-3-16
M3 - Conference contribution book
SN - 978-1-63248-061-3
SP - 25
EP - 29
BT - Proceedings of the Third International Conference Advances in Computing, Communication and Information Technology- CCIT 2015
A2 - Kumar, Rakesh
ER -