Towards lasing on a silicon chip: gallium and its alloy or rare earth doped gallium nitride as the solution?

Md Shakil Ahmed; Ivan Glesk

doi:10.15224/978-1-63248-061-3-16

Towards lasing on a silicon chip: gallium and its alloy or rare earth doped gallium nitride as the solution?

Md Shakil Ahmed, Ivan Glesk

Electronic And Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

Abstract

Achieving effective solution for lasing on Silicon is a critical and important step for the successful implementation of Photonic Integrated Circuits in our quest to develop the next generation of ultrahigh bandwidth communication devices. In this overview paper various options of hybrid, monolithic and rare earth doping are discussed with the aim to offer the latest state-of-the-art on this topic. Monolithic integration of particular composition of Gallium and its alloys having the direct bandgap property and lattice constant similarity with silicon has been shown as promising. This is then compared with a Rare Earth doped Gallium Nitride approach as another possibility for the ‘lasing on silicon’ solution.

Original language	English
Title of host publication	Proceedings of the Third International Conference Advances in Computing, Communication and Information Technology- CCIT 2015
Editors	Rakesh Kumar
Pages	25-29
Number of pages	5
DOIs	https://doi.org/10.15224/978-1-63248-061-3-16
Publication status	Published - 22 Jun 2015
Event	Third International Conference on Advances in Computing, Communication - CCIT 2015 - Birmingham, United Kingdom Duration: 26 May 2015 → 27 May 2015

Conference

Conference	Third International Conference on Advances in Computing, Communication - CCIT 2015
Country/Territory	United Kingdom
City	Birmingham
Period	26/05/15 → 27/05/15

Keywords

gallium alloys
lasing on silicon
integrated
telecommunication

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10.15224/978-1-63248-061-3-16

Cite this

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title = "Towards lasing on a silicon chip: gallium and its alloy or rare earth doped gallium nitride as the solution?",

abstract = "Achieving effective solution for lasing on Silicon is a critical and important step for the successful implementation of Photonic Integrated Circuits in our quest to develop the next generation of ultrahigh bandwidth communication devices. In this overview paper various options of hybrid, monolithic and rare earth doping are discussed with the aim to offer the latest state-of-the-art on this topic. Monolithic integration of particular composition of Gallium and its alloys having the direct bandgap property and lattice constant similarity with silicon has been shown as promising. This is then compared with a Rare Earth doped Gallium Nitride approach as another possibility for the {\textquoteleft}lasing on silicon{\textquoteright} solution.",

keywords = "gallium alloys, lasing on silicon, integrated, telecommunication",

author = "Ahmed, {Md Shakil} and Ivan Glesk",

year = "2015",

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doi = "10.15224/978-1-63248-061-3-16",

language = "English",

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pages = "25--29",

editor = "{ Kumar}, Rakesh",

booktitle = "Proceedings of the Third International Conference Advances in Computing, Communication and Information Technology- CCIT 2015",

note = "Third International Conference on Advances in Computing, Communication - CCIT 2015 ; Conference date: 26-05-2015 Through 27-05-2015",

}

Ahmed, MS & Glesk, I 2015, Towards lasing on a silicon chip: gallium and its alloy or rare earth doped gallium nitride as the solution? in R Kumar (ed.), Proceedings of the Third International Conference Advances in Computing, Communication and Information Technology- CCIT 2015. pp. 25-29, Third International Conference on Advances in Computing, Communication - CCIT 2015, Birmingham, United Kingdom, 26/05/15. https://doi.org/10.15224/978-1-63248-061-3-16

Towards lasing on a silicon chip : gallium and its alloy or rare earth doped gallium nitride as the solution? / Ahmed, Md Shakil; Glesk, Ivan.

Proceedings of the Third International Conference Advances in Computing, Communication and Information Technology- CCIT 2015. ed. / Rakesh Kumar. 2015. p. 25-29.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

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T1 - Towards lasing on a silicon chip

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AU - Ahmed, Md Shakil

AU - Glesk, Ivan

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N2 - Achieving effective solution for lasing on Silicon is a critical and important step for the successful implementation of Photonic Integrated Circuits in our quest to develop the next generation of ultrahigh bandwidth communication devices. In this overview paper various options of hybrid, monolithic and rare earth doping are discussed with the aim to offer the latest state-of-the-art on this topic. Monolithic integration of particular composition of Gallium and its alloys having the direct bandgap property and lattice constant similarity with silicon has been shown as promising. This is then compared with a Rare Earth doped Gallium Nitride approach as another possibility for the ‘lasing on silicon’ solution.

AB - Achieving effective solution for lasing on Silicon is a critical and important step for the successful implementation of Photonic Integrated Circuits in our quest to develop the next generation of ultrahigh bandwidth communication devices. In this overview paper various options of hybrid, monolithic and rare earth doping are discussed with the aim to offer the latest state-of-the-art on this topic. Monolithic integration of particular composition of Gallium and its alloys having the direct bandgap property and lattice constant similarity with silicon has been shown as promising. This is then compared with a Rare Earth doped Gallium Nitride approach as another possibility for the ‘lasing on silicon’ solution.

KW - gallium alloys

KW - lasing on silicon

KW - integrated

KW - telecommunication

UR - http://www.seekdl.org/conferences_page_papers.php?confid=206

U2 - 10.15224/978-1-63248-061-3-16

DO - 10.15224/978-1-63248-061-3-16

M3 - Conference contribution book

SN - 978-1-63248-061-3

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EP - 29

BT - Proceedings of the Third International Conference Advances in Computing, Communication and Information Technology- CCIT 2015

A2 - Kumar, Rakesh

Y2 - 26 May 2015 through 27 May 2015

ER -

Towards lasing on a silicon chip: gallium and its alloy or rare earth doped gallium nitride as the solution?

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Keywords

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