Abstract
Achieving effective solution for lasing on Silicon is a critical and important step for the successful implementation of Photonic Integrated Circuits in our quest to develop the next generation of ultrahigh bandwidth communication devices. In this overview paper various options of hybrid, monolithic and rare earth doping are discussed with the aim to offer the latest state-of-the-art on this topic. Monolithic integration of particular composition of Gallium and its alloys having the direct bandgap property and lattice constant similarity with silicon has been shown as promising. This is then compared with a Rare Earth doped Gallium Nitride approach as another possibility for the ‘lasing on silicon’ solution.
Original language | English |
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Title of host publication | Proceedings of the Third International Conference Advances in Computing, Communication and Information Technology- CCIT 2015 |
Editors | Rakesh Kumar |
Pages | 25-29 |
Number of pages | 5 |
DOIs | |
Publication status | Published - 22 Jun 2015 |
Event | Third International Conference on Advances in Computing, Communication - CCIT 2015 - Birmingham, United Kingdom Duration: 26 May 2015 → 27 May 2015 |
Conference
Conference | Third International Conference on Advances in Computing, Communication - CCIT 2015 |
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Country/Territory | United Kingdom |
City | Birmingham |
Period | 26/05/15 → 27/05/15 |
Keywords
- gallium alloys
- lasing on silicon
- integrated
- telecommunication