Towards lasing on a silicon chip: gallium and its alloy or rare earth doped gallium nitride as the solution?

Md Shakil Ahmed, Ivan Glesk

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Abstract

Achieving effective solution for lasing on Silicon is a critical and important step for the successful implementation of Photonic Integrated Circuits in our quest to develop the next generation of ultrahigh bandwidth communication devices. In this overview paper various options of hybrid, monolithic and rare earth doping are discussed with the aim to offer the latest state-of-the-art on this topic. Monolithic integration of particular composition of Gallium and its alloys having the direct bandgap property and lattice constant similarity with silicon has been shown as promising. This is then compared with a Rare Earth doped Gallium Nitride approach as another possibility for the ‘lasing on silicon’ solution.
Original languageEnglish
Title of host publicationProceedings of the Third International Conference Advances in Computing, Communication and Information Technology- CCIT 2015
EditorsRakesh Kumar
Pages25-29
Number of pages5
DOIs
Publication statusPublished - 22 Jun 2015
EventThird International Conference on Advances in Computing, Communication - CCIT 2015 - Birmingham, United Kingdom
Duration: 26 May 201527 May 2015

Conference

ConferenceThird International Conference on Advances in Computing, Communication - CCIT 2015
CountryUnited Kingdom
CityBirmingham
Period26/05/1527/05/15

Keywords

  • gallium alloys
  • lasing on silicon
  • integrated
  • telecommunication

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    Ahmed, M. S., & Glesk, I. (2015). Towards lasing on a silicon chip: gallium and its alloy or rare earth doped gallium nitride as the solution? In R. Kumar (Ed.), Proceedings of the Third International Conference Advances in Computing, Communication and Information Technology- CCIT 2015 (pp. 25-29) https://doi.org/10.15224/978-1-63248-061-3-16