Toward a practical model of a-Si:H defects in intensity-time-temperature space

D. Caputo, J. N. Bullock, Helena Gleskova, S. Wagner

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

9 Citations (Scopus)

Abstract

This chapter looks toward a practical model of a-Si:H defects in intensity-time-temperature space
LanguageEnglish
Title of host publicationAmorphous silicon technology - 1994
Subtitle of host publicationvolume 336 - MRS proceedings
EditorsM. Hack, A. Madan, A. Matsuda, M. Powell, E. A. Schiff
Place of PublicationWarrendale, PA
Pages165-170
Number of pages6
Volume336
Publication statusPublished - 4 Nov 1994
EventMRS Spring Meeting 1994 - San Francisco, United States
Duration: 4 Apr 19948 Apr 1994

Publication series

NameMRS Symposium Proceedings
PublisherMaterials Research Society
Volume336

Conference

ConferenceMRS Spring Meeting 1994
CountryUnited States
CitySan Francisco
Period4/04/948/04/94

Fingerprint

Temperature
Defects

Keywords

  • practical model
  • Si:H defects
  • intensity-time-temperature

Cite this

Caputo, D., Bullock, J. N., Gleskova, H., & Wagner, S. (1994). Toward a practical model of a-Si:H defects in intensity-time-temperature space. In M. Hack, A. Madan, A. Matsuda, M. Powell, & E. A. Schiff (Eds.), Amorphous silicon technology - 1994: volume 336 - MRS proceedings (Vol. 336, pp. 165-170). (MRS Symposium Proceedings; Vol. 336). Warrendale, PA.
Caputo, D. ; Bullock, J. N. ; Gleskova, Helena ; Wagner, S. / Toward a practical model of a-Si:H defects in intensity-time-temperature space. Amorphous silicon technology - 1994: volume 336 - MRS proceedings. editor / M. Hack ; A. Madan ; A. Matsuda ; M. Powell ; E. A. Schiff. Vol. 336 Warrendale, PA, 1994. pp. 165-170 (MRS Symposium Proceedings).
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Caputo, D, Bullock, JN, Gleskova, H & Wagner, S 1994, Toward a practical model of a-Si:H defects in intensity-time-temperature space. in M Hack, A Madan, A Matsuda, M Powell & EA Schiff (eds), Amorphous silicon technology - 1994: volume 336 - MRS proceedings. vol. 336, MRS Symposium Proceedings, vol. 336, Warrendale, PA, pp. 165-170, MRS Spring Meeting 1994, San Francisco, United States, 4/04/94.

Toward a practical model of a-Si:H defects in intensity-time-temperature space. / Caputo, D.; Bullock, J. N.; Gleskova, Helena; Wagner, S.

Amorphous silicon technology - 1994: volume 336 - MRS proceedings. ed. / M. Hack; A. Madan; A. Matsuda; M. Powell; E. A. Schiff. Vol. 336 Warrendale, PA, 1994. p. 165-170 (MRS Symposium Proceedings; Vol. 336).

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

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Caputo D, Bullock JN, Gleskova H, Wagner S. Toward a practical model of a-Si:H defects in intensity-time-temperature space. In Hack M, Madan A, Matsuda A, Powell M, Schiff EA, editors, Amorphous silicon technology - 1994: volume 336 - MRS proceedings. Vol. 336. Warrendale, PA. 1994. p. 165-170. (MRS Symposium Proceedings).