Toward a practical model of a-Si:H defects in intensity-time-temperature space

D. Caputo, J. N. Bullock, Helena Gleskova, S. Wagner

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

9 Citations (Scopus)

Abstract

This chapter looks toward a practical model of a-Si:H defects in intensity-time-temperature space
Original languageEnglish
Title of host publicationAmorphous silicon technology - 1994
Subtitle of host publicationvolume 336 - MRS proceedings
EditorsM. Hack, A. Madan, A. Matsuda, M. Powell, E. A. Schiff
Place of PublicationWarrendale, PA
Pages165-170
Number of pages6
Volume336
Publication statusPublished - 4 Nov 1994
EventMRS Spring Meeting 1994 - San Francisco, United States
Duration: 4 Apr 19948 Apr 1994

Publication series

NameMRS Symposium Proceedings
PublisherMaterials Research Society
Volume336

Conference

ConferenceMRS Spring Meeting 1994
CountryUnited States
CitySan Francisco
Period4/04/948/04/94

Keywords

  • practical model
  • Si:H defects
  • intensity-time-temperature

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