Topographic effects in low-energy radiation damage

M Rahman, K Mathieson

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have studied the effect of low-index channeling on sidewall dry-etch damage. A quantum electron beam in the two-dimensional electron gas of a GaAs/AlGaAs heterostructure was used to probe electrical damage at a specific depth down an etched sidewall. In analyzing the measured behavior as a function of etch time we have developed a model for the sidewall damage distribution that takes into account the geometry of the 〈110〉 channels in detail. The analysis shows that more damage is possible beneath regions of high topography than is usually assumed.
LanguageEnglish
Pages1322-1324
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number9
DOIs
Publication statusPublished - 28 Aug 2000

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radiation damage
damage
energy
aluminum gallium arsenides
electron gas
topography
electron beams
probes
geometry

Keywords

  • photonics
  • radiation damage
  • radiation
  • optics

Cite this

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title = "Topographic effects in low-energy radiation damage",
abstract = "We have studied the effect of low-index channeling on sidewall dry-etch damage. A quantum electron beam in the two-dimensional electron gas of a GaAs/AlGaAs heterostructure was used to probe electrical damage at a specific depth down an etched sidewall. In analyzing the measured behavior as a function of etch time we have developed a model for the sidewall damage distribution that takes into account the geometry of the 〈110〉 channels in detail. The analysis shows that more damage is possible beneath regions of high topography than is usually assumed.",
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Topographic effects in low-energy radiation damage. / Rahman, M; Mathieson, K.

In: Applied Physics Letters, Vol. 77, No. 9, 28.08.2000, p. 1322-1324.

Research output: Contribution to journalArticle

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AU - Rahman, M

AU - Mathieson, K

PY - 2000/8/28

Y1 - 2000/8/28

N2 - We have studied the effect of low-index channeling on sidewall dry-etch damage. A quantum electron beam in the two-dimensional electron gas of a GaAs/AlGaAs heterostructure was used to probe electrical damage at a specific depth down an etched sidewall. In analyzing the measured behavior as a function of etch time we have developed a model for the sidewall damage distribution that takes into account the geometry of the 〈110〉 channels in detail. The analysis shows that more damage is possible beneath regions of high topography than is usually assumed.

AB - We have studied the effect of low-index channeling on sidewall dry-etch damage. A quantum electron beam in the two-dimensional electron gas of a GaAs/AlGaAs heterostructure was used to probe electrical damage at a specific depth down an etched sidewall. In analyzing the measured behavior as a function of etch time we have developed a model for the sidewall damage distribution that takes into account the geometry of the 〈110〉 channels in detail. The analysis shows that more damage is possible beneath regions of high topography than is usually assumed.

KW - photonics

KW - radiation damage

KW - radiation

KW - optics

U2 - 10.1063/1.1289907

DO - 10.1063/1.1289907

M3 - Article

VL - 77

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EP - 1324

JO - Applied Physics Letters

T2 - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

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