Topographic effects in low-energy radiation damage

M Rahman, K Mathieson

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have studied the effect of low-index channeling on sidewall dry-etch damage. A quantum electron beam in the two-dimensional electron gas of a GaAs/AlGaAs heterostructure was used to probe electrical damage at a specific depth down an etched sidewall. In analyzing the measured behavior as a function of etch time we have developed a model for the sidewall damage distribution that takes into account the geometry of the 〈110〉 channels in detail. The analysis shows that more damage is possible beneath regions of high topography than is usually assumed.
Original languageEnglish
Pages (from-to)1322-1324
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number9
DOIs
Publication statusPublished - 28 Aug 2000

Keywords

  • photonics
  • radiation damage
  • radiation
  • optics

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