Topic review: Application of raman spectroscopy characterization in micro/nano-machining

Zongwei Xu, Zhongdu He, Ying Song, Xiu Fu, Mathias Rommel, Xichun Luo, Alexander Hartmaier, Junjie Zhang, Fengzhou Fang

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The defects and subsurface damages induced by crystal growth and micro/nano-machining have a significant impact on the functional performance of machined products. Raman spectroscopy is an efficient, powerful, and non-destructive testing method to characterize these defects and subsurface damages. This paper aims to review the fundamentals and applications of Raman spectroscopy on the characterization of defects and subsurface damages in micro/nano-machining. Firstly, the principle and several critical parameters (such as penetration depth, laser spot size, and so on) involved in the Raman characterization are introduced. Then, the mechanism of Raman spectroscopy for detection of defects and subsurface damages is discussed. The Raman spectroscopy characterization of semiconductor materials’ stacking faults, phase transformation, and residual stress in micro/nano-machining is discussed in detail. Identification and characterization of phase transformation and stacking faults for Si and SiC is feasible using the information of new Raman bands. Based on the Raman band position shift and Raman intensity ratio, Raman spectroscopy can be used to quantitatively calculate the residual stress and the thickness of the subsurface damage layer of semiconductor materials. The Tip-Enhanced Raman Spectroscopy (TERS) technique is helpful to dramatically enhance the Raman scattering signal at weak damages and it is considered as a promising research field.
LanguageEnglish
Article number361
Number of pages23
JournalMicromachines
Volume9
Issue number7
DOIs
Publication statusPublished - 21 Jul 2018

Fingerprint

Raman spectroscopy
Machining
Defects
Stacking faults
Residual stresses
Phase transitions
Semiconductor materials
Nondestructive examination
Crystal growth
Raman scattering
Lasers

Keywords

  • Raman spectroscopy
  • micromachining
  • nanomanufacturing
  • phase transormation
  • residual stress

Cite this

Xu, Zongwei ; He, Zhongdu ; Song, Ying ; Fu, Xiu ; Rommel, Mathias ; Luo, Xichun ; Hartmaier, Alexander ; Zhang, Junjie ; Fang, Fengzhou. / Topic review : Application of raman spectroscopy characterization in micro/nano-machining. In: Micromachines. 2018 ; Vol. 9, No. 7.
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abstract = "The defects and subsurface damages induced by crystal growth and micro/nano-machining have a significant impact on the functional performance of machined products. Raman spectroscopy is an efficient, powerful, and non-destructive testing method to characterize these defects and subsurface damages. This paper aims to review the fundamentals and applications of Raman spectroscopy on the characterization of defects and subsurface damages in micro/nano-machining. Firstly, the principle and several critical parameters (such as penetration depth, laser spot size, and so on) involved in the Raman characterization are introduced. Then, the mechanism of Raman spectroscopy for detection of defects and subsurface damages is discussed. The Raman spectroscopy characterization of semiconductor materials’ stacking faults, phase transformation, and residual stress in micro/nano-machining is discussed in detail. Identification and characterization of phase transformation and stacking faults for Si and SiC is feasible using the information of new Raman bands. Based on the Raman band position shift and Raman intensity ratio, Raman spectroscopy can be used to quantitatively calculate the residual stress and the thickness of the subsurface damage layer of semiconductor materials. The Tip-Enhanced Raman Spectroscopy (TERS) technique is helpful to dramatically enhance the Raman scattering signal at weak damages and it is considered as a promising research field.",
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author = "Zongwei Xu and Zhongdu He and Ying Song and Xiu Fu and Mathias Rommel and Xichun Luo and Alexander Hartmaier and Junjie Zhang and Fengzhou Fang",
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Xu, Z, He, Z, Song, Y, Fu, X, Rommel, M, Luo, X, Hartmaier, A, Zhang, J & Fang, F 2018, 'Topic review: Application of raman spectroscopy characterization in micro/nano-machining' Micromachines, vol. 9, no. 7, 361. https://doi.org/10.3390/mi9070361

Topic review : Application of raman spectroscopy characterization in micro/nano-machining. / Xu, Zongwei; He, Zhongdu; Song, Ying; Fu, Xiu; Rommel, Mathias; Luo, Xichun; Hartmaier, Alexander; Zhang, Junjie; Fang, Fengzhou.

In: Micromachines, Vol. 9, No. 7, 361, 21.07.2018.

Research output: Contribution to journalArticle

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T1 - Topic review

T2 - Micromachines

AU - Xu, Zongwei

AU - He, Zhongdu

AU - Song, Ying

AU - Fu, Xiu

AU - Rommel, Mathias

AU - Luo, Xichun

AU - Hartmaier, Alexander

AU - Zhang, Junjie

AU - Fang, Fengzhou

PY - 2018/7/21

Y1 - 2018/7/21

N2 - The defects and subsurface damages induced by crystal growth and micro/nano-machining have a significant impact on the functional performance of machined products. Raman spectroscopy is an efficient, powerful, and non-destructive testing method to characterize these defects and subsurface damages. This paper aims to review the fundamentals and applications of Raman spectroscopy on the characterization of defects and subsurface damages in micro/nano-machining. Firstly, the principle and several critical parameters (such as penetration depth, laser spot size, and so on) involved in the Raman characterization are introduced. Then, the mechanism of Raman spectroscopy for detection of defects and subsurface damages is discussed. The Raman spectroscopy characterization of semiconductor materials’ stacking faults, phase transformation, and residual stress in micro/nano-machining is discussed in detail. Identification and characterization of phase transformation and stacking faults for Si and SiC is feasible using the information of new Raman bands. Based on the Raman band position shift and Raman intensity ratio, Raman spectroscopy can be used to quantitatively calculate the residual stress and the thickness of the subsurface damage layer of semiconductor materials. The Tip-Enhanced Raman Spectroscopy (TERS) technique is helpful to dramatically enhance the Raman scattering signal at weak damages and it is considered as a promising research field.

AB - The defects and subsurface damages induced by crystal growth and micro/nano-machining have a significant impact on the functional performance of machined products. Raman spectroscopy is an efficient, powerful, and non-destructive testing method to characterize these defects and subsurface damages. This paper aims to review the fundamentals and applications of Raman spectroscopy on the characterization of defects and subsurface damages in micro/nano-machining. Firstly, the principle and several critical parameters (such as penetration depth, laser spot size, and so on) involved in the Raman characterization are introduced. Then, the mechanism of Raman spectroscopy for detection of defects and subsurface damages is discussed. The Raman spectroscopy characterization of semiconductor materials’ stacking faults, phase transformation, and residual stress in micro/nano-machining is discussed in detail. Identification and characterization of phase transformation and stacking faults for Si and SiC is feasible using the information of new Raman bands. Based on the Raman band position shift and Raman intensity ratio, Raman spectroscopy can be used to quantitatively calculate the residual stress and the thickness of the subsurface damage layer of semiconductor materials. The Tip-Enhanced Raman Spectroscopy (TERS) technique is helpful to dramatically enhance the Raman scattering signal at weak damages and it is considered as a promising research field.

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KW - phase transormation

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