Titanium sapphire: A decade of diode-laser pumping

Jamie C.E. Coyle; John-Mark Hopkins; Alexander A. Lagatsky; Alan J. Kemp

doi:10.1109/CLEOE-EQEC.2019.8872912

Titanium sapphire: A decade of diode-laser pumping

Jamie C.E. Coyle, John-Mark Hopkins, Alexander A. Lagatsky, Alan J. Kemp

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

1 Citation (Scopus)

23 Downloads (Pure)

Abstract

For many years, Ti:sapphire was the prototypical example of a solid-state laser material that could not be diode pumped. The rationale for this assessment follows from the laser properties of Ti:sapphire, which combine to demand high brightness pumping in the blue-green region (see fig. 1 [1]). The development of efficient Gallium Nitride (GaN) based laser diodes eroded this logic [2], and improvements in the spatial brightness of GaN diode lasers subsequently enabled the first demonstration of a directly diode-laser pumped Ti:sapphire laser in 2009 [3], This presentation will outline the physics that makes diode-pumping difficult, and the developments that mean, it is, nonetheless, possible. Interestingly, diode-pumping of CW and modelocked Ti:sapphire lasers was achieved not by a radical redesign of the laser, but by careful optimisation of existing approaches that enabled the rapidly improving brightness of GaN diode lasers to be exploited [3-5].

Original language	English
Title of host publication	2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019
Place of Publication	Piscataway, NJ.
Publisher	IEEE
Number of pages	2
ISBN (Electronic)	9781728104690
DOIs	https://doi.org/10.1109/CLEOE-EQEC.2019.8872912
Publication status	Published - 23 Jun 2019
Event	2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019 - Munich, Germany Duration: 23 Jun 2019 → 27 Jun 2019

Publication series

Name	2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019

Conference

Conference	2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019
Country/Territory	Germany
City	Munich
Period	23/06/19 → 27/06/19

Keywords

titanium sapphire
diode-lasers
Ti:sapphire laser
GaN diodes

Access to Document

10.1109/CLEOE-EQEC.2019.8872912

Coyle-etal-CLEO-2019-Titanium-sapphire-a-decade-of-diode-laser-pumpingAccepted author manuscript, 373 KB

UK Quantum Technology Hub for Sensors and Metrology
Hastie, J., Arnold, A., Griffin, P., Kemp, A. & Riis, E.
EPSRC (Engineering and Physical Sciences Research Council)
1/12/14 → 30/11/19
Project: Research
RAEng/Fraunhofer Research Chair in Advanced Laser Engineering
Kemp, A.
Fraunhofer UK Research Limited, Royal Academy of Engineering RAE
1/02/14 → 31/12/19
Project: Research

Cite this

Coyle, J. C. E., Hopkins, J-M., Lagatsky, A. A., & Kemp, A. J. (2019). Titanium sapphire: A decade of diode-laser pumping. In 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019 [8872912] (2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019). IEEE. https://doi.org/10.1109/CLEOE-EQEC.2019.8872912

Coyle, Jamie C.E. ; Hopkins, John-Mark ; Lagatsky, Alexander A. et al. / Titanium sapphire : A decade of diode-laser pumping. 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019. Piscataway, NJ. : IEEE, 2019. (2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019).

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abstract = "For many years, Ti:sapphire was the prototypical example of a solid-state laser material that could not be diode pumped. The rationale for this assessment follows from the laser properties of Ti:sapphire, which combine to demand high brightness pumping in the blue-green region (see fig. 1 [1]). The development of efficient Gallium Nitride (GaN) based laser diodes eroded this logic [2], and improvements in the spatial brightness of GaN diode lasers subsequently enabled the first demonstration of a directly diode-laser pumped Ti:sapphire laser in 2009 [3], This presentation will outline the physics that makes diode-pumping difficult, and the developments that mean, it is, nonetheless, possible. Interestingly, diode-pumping of CW and modelocked Ti:sapphire lasers was achieved not by a radical redesign of the laser, but by careful optimisation of existing approaches that enabled the rapidly improving brightness of GaN diode lasers to be exploited [3-5].",

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note = "{\textcopyright} 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.; 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019 ; Conference date: 23-06-2019 Through 27-06-2019",

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Coyle, JCE, Hopkins, J-M, Lagatsky, AA & Kemp, AJ 2019, Titanium sapphire: A decade of diode-laser pumping. in 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019., 8872912, 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019, IEEE, Piscataway, NJ., 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019, Munich, Germany, 23/06/19. https://doi.org/10.1109/CLEOE-EQEC.2019.8872912

Titanium sapphire : A decade of diode-laser pumping. / Coyle, Jamie C.E.; Hopkins, John-Mark; Lagatsky, Alexander A. et al.

2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019. Piscataway, NJ. : IEEE, 2019. 8872912 (2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

TY - GEN

T1 - Titanium sapphire

T2 - 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019

AU - Coyle, Jamie C.E.

AU - Hopkins, John-Mark

AU - Lagatsky, Alexander A.

AU - Kemp, Alan J.

N1 - © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

PY - 2019/6/23

Y1 - 2019/6/23

N2 - For many years, Ti:sapphire was the prototypical example of a solid-state laser material that could not be diode pumped. The rationale for this assessment follows from the laser properties of Ti:sapphire, which combine to demand high brightness pumping in the blue-green region (see fig. 1 [1]). The development of efficient Gallium Nitride (GaN) based laser diodes eroded this logic [2], and improvements in the spatial brightness of GaN diode lasers subsequently enabled the first demonstration of a directly diode-laser pumped Ti:sapphire laser in 2009 [3], This presentation will outline the physics that makes diode-pumping difficult, and the developments that mean, it is, nonetheless, possible. Interestingly, diode-pumping of CW and modelocked Ti:sapphire lasers was achieved not by a radical redesign of the laser, but by careful optimisation of existing approaches that enabled the rapidly improving brightness of GaN diode lasers to be exploited [3-5].

AB - For many years, Ti:sapphire was the prototypical example of a solid-state laser material that could not be diode pumped. The rationale for this assessment follows from the laser properties of Ti:sapphire, which combine to demand high brightness pumping in the blue-green region (see fig. 1 [1]). The development of efficient Gallium Nitride (GaN) based laser diodes eroded this logic [2], and improvements in the spatial brightness of GaN diode lasers subsequently enabled the first demonstration of a directly diode-laser pumped Ti:sapphire laser in 2009 [3], This presentation will outline the physics that makes diode-pumping difficult, and the developments that mean, it is, nonetheless, possible. Interestingly, diode-pumping of CW and modelocked Ti:sapphire lasers was achieved not by a radical redesign of the laser, but by careful optimisation of existing approaches that enabled the rapidly improving brightness of GaN diode lasers to be exploited [3-5].

KW - titanium sapphire

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KW - GaN diodes

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M3 - Conference contribution book

T3 - 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019

BT - 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019

PB - IEEE

CY - Piscataway, NJ.

Y2 - 23 June 2019 through 27 June 2019

ER -

Coyle JCE, Hopkins J-M, Lagatsky AA, Kemp AJ. Titanium sapphire: A decade of diode-laser pumping. In 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019. Piscataway, NJ.: IEEE. 2019. 8872912. (2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019). doi: 10.1109/CLEOE-EQEC.2019.8872912

Titanium sapphire: A decade of diode-laser pumping

Abstract

Publication series

Conference

Keywords

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Projects

UK Quantum Technology Hub for Sensors and Metrology

RAEng/Fraunhofer Research Chair in Advanced Laser Engineering

Cite this