Tin gallium oxide epilayers on different substrates: optical and compositional analysis

Daniel A. Hunter; Gunasekar Naresh-Kumar; Paul R. Edwards; Olha Makydonska; Fabien C. P. Massabuau; Isa Hatipoglu; Partha  Mukhopadhyay; Winston V. Schoenfeld; Robert W. Martin

doi:10.1002/pssb.202400137

Tin gallium oxide epilayers on different substrates: optical and compositional analysis

Daniel A. Hunter, Gunasekar Naresh-Kumar, Paul R. Edwards, Olha Makydonska, Fabien C. P. Massabuau, Isa Hatipoglu, Partha Mukhopadhyay, Winston V. Schoenfeld, Robert W. Martin

Research output: Contribution to journal › Article › peer-review

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Abstract

Electron beam techniques have been used to analyze the impact of substrate choice and growth parameters on the compositional and optical properties of tin gallium oxide [(Sn x Ga1−x)2O3] thin films grown by plasma‐assisted molecular beam epitaxy. Sn incorporation and film quality are found to be highly dependent on growth temperature and substrate material (silicon, sapphire, and bulk Ga2O3) with alloy concentrations varying up to an x value of 0.11. Room temperature cathodoluminescence spectra show the Sn alloying suppressing UV (3.3–3.0 eV), enhancing blue (2.8–2.4 eV), and generating green (2.4–2.0 eV) emission, indicative of the introduction of a high density of gallium vacancies (VGa) and subsequent VGa–Sn complexes. This behavior was further analyzed by mapping composition and luminescence across a cross section. Compared to Ga2O3, the spectral bands show a clear redshift due to bandgap reduction, confirmed by optical transmission measurements. The results show promise that the bandgap of gallium oxide can successfully be reduced through Sn alloying and used for bandgap engineering within UV optoelectronic devices.

Original language	English
Article number	2400137
Number of pages	10
Journal	Physica Status Solidi B
Volume	261
Issue number	10
Early online date	2 Jul 2024
DOIs	https://doi.org/10.1002/pssb.202400137
Publication status	Published - 1 Oct 2024

Funding

The authors acknowledge support from the EPSRC project “Nanoanalysis for Advanced Materials and Healthcare” (EP/K011952/1, EP/N010914/1) and an EPSRC vacation bursary for OM.

Keywords

gallium oxide
tin-gallium oxide
solar-blind photodetectors
cathodoluminescence

Access to Document

10.1002/pssb.202400137Licence: CC BY 4.0

Hunter-etal-PSSB-2024-Tin-gallium-oxide-epilayers-on-different-substratesFinal published version, 3.11 MBLicence: CC BY 4.0

1 Active
4 Finished

UV-Vis Spectrophotometer (with integrated sphere) - Shimadzu UV-2600
Massabuau, F. (Principal Investigator)
16/02/21 → …
Project: Equipment only
EPSRC Capital Award for Core Equipment grant: EP/V034995/1 (£52k)
Roberts, J. (Principal Investigator), Stillings, M. (Co-investigator), Knapp, M. (Co-investigator) & Lunn, R. (Co-investigator)
14/11/20 → 31/03/23
Project: Internally funded project
Doctoral Training Partnership 2018-19 University of Strathclyde | Hunter, Daniel
Martin, R. (Principal Investigator), Edwards, P. (Co-investigator) & Hunter, D. (Research Co-investigator)
EPSRC (Engineering and Physical Sciences Research Council)
1/10/19 → 29/09/23
Project: Research Studentship - Internally Allocated

Data for: "Tin gallium oxide epilayers on different substrates: optical and compositional analysis"
Hunter, D. (Creator), Edwards, P. (Creator), Massabuau, F. (Creator) & Martin, R. (Creator), University of Strathclyde, 24 Jun 2024
DOI: 10.15129/baf5b819-d79e-429e-89ae-a31614368592
Dataset

Investigation of new semiconductor materials for wide band-gap devices
Hunter, D. (Author), Martin, R. (Supervisor) & Edwards, P. (Supervisor), 29 Sept 2023
Student thesis: Doctoral Thesis

Cite this

@article{7030eeaac80d4b128e6153fdb6a6e952,

title = "Tin gallium oxide epilayers on different substrates: optical and compositional analysis",

abstract = "Electron beam techniques have been used to analyze the impact of substrate choice and growth parameters on the compositional and optical properties of tin gallium oxide [(Sn x Ga1−x)2O3] thin films grown by plasma‐assisted molecular beam epitaxy. Sn incorporation and film quality are found to be highly dependent on growth temperature and substrate material (silicon, sapphire, and bulk Ga2O3) with alloy concentrations varying up to an x value of 0.11. Room temperature cathodoluminescence spectra show the Sn alloying suppressing UV (3.3–3.0 eV), enhancing blue (2.8–2.4 eV), and generating green (2.4–2.0 eV) emission, indicative of the introduction of a high density of gallium vacancies (VGa) and subsequent VGa–Sn complexes. This behavior was further analyzed by mapping composition and luminescence across a cross section. Compared to Ga2O3, the spectral bands show a clear redshift due to bandgap reduction, confirmed by optical transmission measurements. The results show promise that the bandgap of gallium oxide can successfully be reduced through Sn alloying and used for bandgap engineering within UV optoelectronic devices.",

keywords = "gallium oxide, tin-gallium oxide, solar-blind photodetectors, cathodoluminescence",

author = "Hunter, {Daniel A.} and Gunasekar Naresh-Kumar and Edwards, {Paul R.} and Olha Makydonska and Massabuau, {Fabien C. P.} and Isa Hatipoglu and Partha Mukhopadhyay and Schoenfeld, {Winston V.} and Martin, {Robert W.}",

year = "2024",

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doi = "10.1002/pssb.202400137",

language = "English",

volume = "261",

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issn = "0370-1972",

publisher = "John Wiley and Sons Inc.",

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TY - JOUR

T1 - Tin gallium oxide epilayers on different substrates

T2 - optical and compositional analysis

AU - Hunter, Daniel A.

AU - Naresh-Kumar, Gunasekar

AU - Edwards, Paul R.

AU - Makydonska, Olha

AU - Massabuau, Fabien C. P.

AU - Hatipoglu, Isa

AU - Mukhopadhyay, Partha

AU - Schoenfeld, Winston V.

AU - Martin, Robert W.

PY - 2024/10/1

Y1 - 2024/10/1

N2 - Electron beam techniques have been used to analyze the impact of substrate choice and growth parameters on the compositional and optical properties of tin gallium oxide [(Sn x Ga1−x)2O3] thin films grown by plasma‐assisted molecular beam epitaxy. Sn incorporation and film quality are found to be highly dependent on growth temperature and substrate material (silicon, sapphire, and bulk Ga2O3) with alloy concentrations varying up to an x value of 0.11. Room temperature cathodoluminescence spectra show the Sn alloying suppressing UV (3.3–3.0 eV), enhancing blue (2.8–2.4 eV), and generating green (2.4–2.0 eV) emission, indicative of the introduction of a high density of gallium vacancies (VGa) and subsequent VGa–Sn complexes. This behavior was further analyzed by mapping composition and luminescence across a cross section. Compared to Ga2O3, the spectral bands show a clear redshift due to bandgap reduction, confirmed by optical transmission measurements. The results show promise that the bandgap of gallium oxide can successfully be reduced through Sn alloying and used for bandgap engineering within UV optoelectronic devices.

AB - Electron beam techniques have been used to analyze the impact of substrate choice and growth parameters on the compositional and optical properties of tin gallium oxide [(Sn x Ga1−x)2O3] thin films grown by plasma‐assisted molecular beam epitaxy. Sn incorporation and film quality are found to be highly dependent on growth temperature and substrate material (silicon, sapphire, and bulk Ga2O3) with alloy concentrations varying up to an x value of 0.11. Room temperature cathodoluminescence spectra show the Sn alloying suppressing UV (3.3–3.0 eV), enhancing blue (2.8–2.4 eV), and generating green (2.4–2.0 eV) emission, indicative of the introduction of a high density of gallium vacancies (VGa) and subsequent VGa–Sn complexes. This behavior was further analyzed by mapping composition and luminescence across a cross section. Compared to Ga2O3, the spectral bands show a clear redshift due to bandgap reduction, confirmed by optical transmission measurements. The results show promise that the bandgap of gallium oxide can successfully be reduced through Sn alloying and used for bandgap engineering within UV optoelectronic devices.

KW - gallium oxide

KW - tin-gallium oxide

KW - solar-blind photodetectors

KW - cathodoluminescence

U2 - 10.1002/pssb.202400137

DO - 10.1002/pssb.202400137

M3 - Article

SN - 0370-1972

VL - 261

JO - Physica Status Solidi B

JF - Physica Status Solidi B

IS - 10

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Tin gallium oxide epilayers on different substrates: optical and compositional analysis

Abstract

Funding

Keywords

Access to Document

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Projects

UV-Vis Spectrophotometer (with integrated sphere) - Shimadzu UV-2600

EPSRC Capital Award for Core Equipment grant: EP/V034995/1 (£52k)

Doctoral Training Partnership 2018-19 University of Strathclyde | Hunter, Daniel

Datasets

Data for: "Tin gallium oxide epilayers on different substrates: optical and compositional analysis"

Student theses

Investigation of new semiconductor materials for wide band-gap devices

Cite this