Time- and frequency-domain measurements of solitons in subwavelength silicon waveguides using cross-correlation

W. Ding, A.V. Gorbach, W.J. Wadsworth, J.C. Knight, D.V. Skryabin, M.J. Strain, M. Sorel, R.M. De La Rue

Research output: Contribution to conferencePaper

Abstract

Silicon photonics has attracted much attention [1]. While spectral measurements of nonlinear processes in subwavelength silicon-on-insulator (SOI) waveguides have been well reported, time-domain or simultaneous time-and-frequency characterization is required to fully characterize effects like soliton formation [2,3].
Original languageEnglish
Number of pages1
DOIs
Publication statusPublished - 1 Jan 2011
Event2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011 - Munich, Germany
Duration: 22 May 201126 May 2011

Conference

Conference2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011
CountryGermany
CityMunich
Period22/05/1126/05/11

Keywords

  • cross-correlation
  • Time-
  • frequency-domain measurements
  • solitons
  • subwavelength silicon waveguides

Cite this

Ding, W., Gorbach, A. V., Wadsworth, W. J., Knight, J. C., Skryabin, D. V., Strain, M. J., Sorel, M., & De La Rue, R. M. (2011). Time- and frequency-domain measurements of solitons in subwavelength silicon waveguides using cross-correlation. Paper presented at 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011, Munich, Germany. https://doi.org/10.1109/CLEOE.2011.5943163