Ti alloyed α-Ga2O3: route towards wide band gap engineering

Armin Barthel, Joseph Roberts, Mari Napari, Martin Frentrup, Tahmida Huq, András Kovács, Rachel Oliver, Paul Chalker, Timo Sajavaara, Fabien Massabuau

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)
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The suitability of Ti as a band gap modifier for α-Ga2O3 was investigated, taking advantage of the isostructural α phases and high band gap difference between Ti2O3 and Ga2O3. Films of (Ti,Ga)2O3 were synthesized by atomic layer deposition on sapphire substrates, and characterized to determine how crystallinity and band gap vary with composition for this alloy. We report the deposition of high quality α-(TixGa1-x)2O3 films with x = 3.7%. For greater compositions the crystalline quality of the films degrades rapidly, where the corundum phase is maintained in films up to x = 5.3%, and films containing greater Ti fractions being amorphous. Over the range of achieved corundum phase films, that is 0% ≤ x ≤ 5.3%, the band gap energy varies by ∼ 270 meV. The ability to maintain a crystalline phase at low fractions of Ti, accompanied by a modification in band gap, shows promising prospects for band gap engineering and the development of wavelength specific solar-blind photodetectors based on α-Ga2O3.
Original languageEnglish
Article number1128
Number of pages11
Issue number12
Publication statusPublished - 20 Dec 2020


  • gallium oxide
  • wide band gap semiconductors
  • solar-blind detection
  • atomic layer deposition
  • thin films
  • alloying
  • bandgap


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