Thienoacene dimers based on the thieno[3,2-b]thiophene moiety: synthesis, characterization and electronic properties

Claude Niebel, Yeongin Kim, Christian Ruzié, Jolanta Karpinska, Basab Chattopadhyay, Guillaume Schweicher, Audrey Richard, Vincent Lemaur, Yoann Olivier, Jérôme Cornil, Alan R. Kennedy, Ying Diao, Wen-Ya Lee, Stefan Mannsfeld, Zhenan Bao, Yves H. Geerts

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

Two thienoacene dimers based on the thieno[3,2-b]thiophene moiety were efficiently synthesized, characterized and evaluated as active hole-transporting layers in organic thin-film field-effect transistors. Both compounds behaved as active p-channel organic semi-conductors showing averaged hole mobility of up to 1.33 cm2 V-1 s-1.

Original languageEnglish
Pages (from-to)674-685
Number of pages12
JournalJournal of Materials Chemistry. C
Volume3
Issue number3
Early online date1 Dec 2014
DOIs
Publication statusPublished - 21 Jan 2015

Keywords

  • thienoacene dimer
  • hole-transporting layer
  • organic thin-film
  • organic semi-conductor
  • hole mobility

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    Niebel, C., Kim, Y., Ruzié, C., Karpinska, J., Chattopadhyay, B., Schweicher, G., ... Geerts, Y. H. (2015). Thienoacene dimers based on the thieno[3,2-b]thiophene moiety: synthesis, characterization and electronic properties. Journal of Materials Chemistry. C , 3(3), 674-685. https://doi.org/10.1039/c4tc02158d