Thienoacene dimers based on the thieno[3,2-b]thiophene moiety

synthesis, characterization and electronic properties

Claude Niebel, Yeongin Kim, Christian Ruzié, Jolanta Karpinska, Basab Chattopadhyay, Guillaume Schweicher, Audrey Richard, Vincent Lemaur, Yoann Olivier, Jérôme Cornil, Alan R. Kennedy, Ying Diao, Wen-Ya Lee, Stefan Mannsfeld, Zhenan Bao, Yves H. Geerts

Research output: Contribution to journalArticle

34 Citations (Scopus)

Abstract

Two thienoacene dimers based on the thieno[3,2-b]thiophene moiety were efficiently synthesized, characterized and evaluated as active hole-transporting layers in organic thin-film field-effect transistors. Both compounds behaved as active p-channel organic semi-conductors showing averaged hole mobility of up to 1.33 cm2 V-1 s-1.

Original languageEnglish
Pages (from-to)674-685
Number of pages12
JournalJournal of Materials Chemistry. C
Volume3
Issue number3
Early online date1 Dec 2014
DOIs
Publication statusPublished - 21 Jan 2015

Fingerprint

Thiophenes
Hole mobility
Thiophene
Thin film transistors
Field effect transistors
Electronic properties
Dimers

Keywords

  • thienoacene dimer
  • hole-transporting layer
  • organic thin-film
  • organic semi-conductor
  • hole mobility

Cite this

Niebel, C., Kim, Y., Ruzié, C., Karpinska, J., Chattopadhyay, B., Schweicher, G., ... Geerts, Y. H. (2015). Thienoacene dimers based on the thieno[3,2-b]thiophene moiety: synthesis, characterization and electronic properties. Journal of Materials Chemistry. C , 3(3), 674-685. https://doi.org/10.1039/c4tc02158d
Niebel, Claude ; Kim, Yeongin ; Ruzié, Christian ; Karpinska, Jolanta ; Chattopadhyay, Basab ; Schweicher, Guillaume ; Richard, Audrey ; Lemaur, Vincent ; Olivier, Yoann ; Cornil, Jérôme ; Kennedy, Alan R. ; Diao, Ying ; Lee, Wen-Ya ; Mannsfeld, Stefan ; Bao, Zhenan ; Geerts, Yves H. / Thienoacene dimers based on the thieno[3,2-b]thiophene moiety : synthesis, characterization and electronic properties. In: Journal of Materials Chemistry. C . 2015 ; Vol. 3, No. 3. pp. 674-685.
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Niebel, C, Kim, Y, Ruzié, C, Karpinska, J, Chattopadhyay, B, Schweicher, G, Richard, A, Lemaur, V, Olivier, Y, Cornil, J, Kennedy, AR, Diao, Y, Lee, W-Y, Mannsfeld, S, Bao, Z & Geerts, YH 2015, 'Thienoacene dimers based on the thieno[3,2-b]thiophene moiety: synthesis, characterization and electronic properties', Journal of Materials Chemistry. C , vol. 3, no. 3, pp. 674-685. https://doi.org/10.1039/c4tc02158d

Thienoacene dimers based on the thieno[3,2-b]thiophene moiety : synthesis, characterization and electronic properties. / Niebel, Claude; Kim, Yeongin; Ruzié, Christian; Karpinska, Jolanta; Chattopadhyay, Basab; Schweicher, Guillaume; Richard, Audrey; Lemaur, Vincent; Olivier, Yoann; Cornil, Jérôme; Kennedy, Alan R.; Diao, Ying; Lee, Wen-Ya; Mannsfeld, Stefan; Bao, Zhenan; Geerts, Yves H.

In: Journal of Materials Chemistry. C , Vol. 3, No. 3, 21.01.2015, p. 674-685.

Research output: Contribution to journalArticle

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AU - Kennedy, Alan R.

AU - Diao, Ying

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