Thickness dependence of the anisotropy of anodic sulphide films on CdxHg1-xTe studied using surface second harmonic generation

P.F. Brevet; I. Russier-Antoine; E. Benichou; L.E.A. Berlouis; A.W. Wark; F.R. Cruickshank

doi:10.1002/1521-3951(200201)229:2<647::AID-PSSB647>3.0.CO;2-3

Thickness dependence of the anisotropy of anodic sulphide films on CdxHg1-xTe studied using surface second harmonic generation

P.F. Brevet, I. Russier-Antoine, E. Benichou, L.E.A. Berlouis, A.W. Wark, F.R. Cruickshank

Pure And Applied Chemistry

Research output: Contribution to journal › Article › peer-review

Abstract

The growth of anodic sulphide films on vicinal CdxHg1—xTe (CMT) surfaces has been investigated as a function of sulphide layer thickness by rotation anisotropy using second harmonic generation (SHG). The presence of thin CdS films on the CMT surface does not alter the fourfold pattern observed for the bare CMT surface. However, with increasing sulphide film thickness (>100 nm) and for growth at constant potential, a drastic loss in the reflected SH intensity occurs. This reduction has been attributed to the formation and incorporation of β-HgS in the layer at the more positive potentials. This compound absorbs the SH signal generated by the composite system of CMT/sulphide layer.

Original language	English
Pages (from-to)	647-651
Number of pages	6
Journal	Physica Status Solidi B
Volume	229
Issue number	2
DOIs	https://doi.org/10.1002/1521-3951(200201)229:2<647::AID-PSSB647>3.0.CO;2-3
Publication status	Published - Jan 2002

Keywords

thickness dependence
anisotropy
anodic sulphide films
surface second harmonic generation
CdxHg1—xTe

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10.1002/1521-3951(200201)229:2<647::AID-PSSB647>3.0.CO;2-3

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title = "Thickness dependence of the anisotropy of anodic sulphide films on CdxHg1-xTe studied using surface second harmonic generation",

abstract = "The growth of anodic sulphide films on vicinal CdxHg1—xTe (CMT) surfaces has been investigated as a function of sulphide layer thickness by rotation anisotropy using second harmonic generation (SHG). The presence of thin CdS films on the CMT surface does not alter the fourfold pattern observed for the bare CMT surface. However, with increasing sulphide film thickness (>100 nm) and for growth at constant potential, a drastic loss in the reflected SH intensity occurs. This reduction has been attributed to the formation and incorporation of β-HgS in the layer at the more positive potentials. This compound absorbs the SH signal generated by the composite system of CMT/sulphide layer.",

keywords = "thickness dependence, anisotropy, anodic sulphide films, surface second harmonic generation, CdxHg1—xTe",

author = "P.F. Brevet and I. Russier-Antoine and E. Benichou and L.E.A. Berlouis and A.W. Wark and F.R. Cruickshank",

year = "2002",

month = jan,

doi = "10.1002/1521-3951(200201)229:2<647::AID-PSSB647>3.0.CO;2-3",

language = "English",

volume = "229",

pages = "647--651",

journal = "Physica Status Solidi B",

issn = "0370-1972",

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TY - JOUR

T1 - Thickness dependence of the anisotropy of anodic sulphide films on CdxHg1-xTe studied using surface second harmonic generation

AU - Brevet, P.F.

AU - Russier-Antoine, I.

AU - Benichou, E.

AU - Berlouis, L.E.A.

AU - Wark, A.W.

AU - Cruickshank, F.R.

PY - 2002/1

Y1 - 2002/1

N2 - The growth of anodic sulphide films on vicinal CdxHg1—xTe (CMT) surfaces has been investigated as a function of sulphide layer thickness by rotation anisotropy using second harmonic generation (SHG). The presence of thin CdS films on the CMT surface does not alter the fourfold pattern observed for the bare CMT surface. However, with increasing sulphide film thickness (>100 nm) and for growth at constant potential, a drastic loss in the reflected SH intensity occurs. This reduction has been attributed to the formation and incorporation of β-HgS in the layer at the more positive potentials. This compound absorbs the SH signal generated by the composite system of CMT/sulphide layer.

AB - The growth of anodic sulphide films on vicinal CdxHg1—xTe (CMT) surfaces has been investigated as a function of sulphide layer thickness by rotation anisotropy using second harmonic generation (SHG). The presence of thin CdS films on the CMT surface does not alter the fourfold pattern observed for the bare CMT surface. However, with increasing sulphide film thickness (>100 nm) and for growth at constant potential, a drastic loss in the reflected SH intensity occurs. This reduction has been attributed to the formation and incorporation of β-HgS in the layer at the more positive potentials. This compound absorbs the SH signal generated by the composite system of CMT/sulphide layer.

KW - thickness dependence

KW - anisotropy

KW - anodic sulphide films

KW - surface second harmonic generation

KW - CdxHg1—xTe

U2 - 10.1002/1521-3951(200201)229:2<647::AID-PSSB647>3.0.CO;2-3

DO - 10.1002/1521-3951(200201)229:2<647::AID-PSSB647>3.0.CO;2-3

M3 - Article

SN - 0370-1972

VL - 229

SP - 647

EP - 651

JO - Physica Status Solidi B

JF - Physica Status Solidi B

IS - 2

ER -

Thickness dependence of the anisotropy of anodic sulphide films on CdxHg1-xTe studied using surface second harmonic generation

Abstract

Keywords

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