Thick adherent diamond films on AlN with low thermal barrier resistance

Soumen Mandal, Chao Yuan, Fabien Massabuau, James W. Pomeroy, Jerome Cuenca, Henry Bland, Evan Thomas, David Wallis, Tim Batten, David Morgan, Rachel Oliver, Martin Kuball, Oliver A. Williams

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The growth of >100-μm-thick diamond layers adherent on aluminum nitride with low thermal boundary resistance between diamond and AlN is presented in this work. The thermal barrier resistance was found to be in the range of 16 m 2·K/GW, which is a large improvement on the current state-of-the-art. While thick films failed to adhere on untreated AlN films, AlN films treated with hydrogen/nitrogen plasma retained the thick diamond layers. Clear differences in ζ-potential measurement confirm surface modification due to hydrogen/nitrogen plasma treatment. An increase in non-diamond carbon in the initial layers of diamond grown on pretreated AlN is seen by Raman spectroscopy. The presence of non-diamond carbon has minimal effect on the thermal barrier resistance. The surfaces studied with X-ray photoelectron spectroscopy revealed a clear distinction between pretreated and untreated samples. The surface aluminum goes from a nitrogen-rich environment to an oxygen-rich environment after pretreatment. A clean interface between diamond and AlN is seen by cross-sectional transmission electron microscopy.

Original languageEnglish
Pages (from-to)40826-40834
Number of pages9
JournalACS Applied Materials and Interfaces
Volume11
Issue number43
Early online date11 Oct 2019
DOIs
Publication statusE-pub ahead of print - 11 Oct 2019

Keywords

  • diamond
  • aluminium nitride
  • thermal barrier resistance
  • diamond seeding
  • diamond growth

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    Mandal, S., Yuan, C., Massabuau, F., Pomeroy, J. W., Cuenca, J., Bland, H., ... Williams, O. A. (2019). Thick adherent diamond films on AlN with low thermal barrier resistance. ACS Applied Materials and Interfaces, 11(43), 40826-40834. https://doi.org/10.1021/acsami.9b13869