Thermal management of near-infrared semiconductor disk lasers with AlGaAs mirrors and lattice (mis)matched active regions

S. L. Vetter; S. Calvez

doi:10.1109/JQE.2011.2180703

Thermal management of near-infrared semiconductor disk lasers with AlGaAs mirrors and lattice (mis)matched active regions

S. L. Vetter, S. Calvez

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

A detailed finite-element analysis of the thermal characteristics of semiconductor disk lasers with AlGaAs mirrors is presented. A comparison of the thermal resistance of devices operating in the 1200-1600 nm wavelength range using either lattice-matched GaAs-based active regions or lattice-mismatched InP-based active regions is performed and reveals similar performance. A variety of semiconductor chip design, mounting, and pumping strategies are subsequently investigated to help define guidelines for an effective thermal management of these devices. As it could be anticipated, the results suggest that best thermal performance is generally achieved when the heat extraction path is minimized.

Original language	English
Pages (from-to)	345-352
Number of pages	8
Journal	IEEE Journal of Quantum Electronics
Volume	48
Issue number	3
DOIs	https://doi.org/10.1109/JQE.2011.2180703
Publication status	Published - Mar 2012

Keywords

thermal model
VECSELS
surface emitting lasers
finite-element analysis
INP
wafer fusion
MU-M
thermal resistance
optimization
surface-emitting lasers
finite-element-analysis
semiconductor disk lasers
high-power
wavelength
thermal management
near-infrared
AlGaAs mirrors
lattice
mismatched
active regions
matched
thermal conductivity
heat pumps
conductivity

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10.1109/JQE.2011.2180703

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title = "Thermal management of near-infrared semiconductor disk lasers with AlGaAs mirrors and lattice (mis)matched active regions",

abstract = "A detailed finite-element analysis of the thermal characteristics of semiconductor disk lasers with AlGaAs mirrors is presented. A comparison of the thermal resistance of devices operating in the 1200-1600 nm wavelength range using either lattice-matched GaAs-based active regions or lattice-mismatched InP-based active regions is performed and reveals similar performance. A variety of semiconductor chip design, mounting, and pumping strategies are subsequently investigated to help define guidelines for an effective thermal management of these devices. As it could be anticipated, the results suggest that best thermal performance is generally achieved when the heat extraction path is minimized. ",

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language = "English",

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AU - Calvez, S.

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AB - A detailed finite-element analysis of the thermal characteristics of semiconductor disk lasers with AlGaAs mirrors is presented. A comparison of the thermal resistance of devices operating in the 1200-1600 nm wavelength range using either lattice-matched GaAs-based active regions or lattice-mismatched InP-based active regions is performed and reveals similar performance. A variety of semiconductor chip design, mounting, and pumping strategies are subsequently investigated to help define guidelines for an effective thermal management of these devices. As it could be anticipated, the results suggest that best thermal performance is generally achieved when the heat extraction path is minimized.

KW - thermal model

KW - VECSELS

KW - surface emitting lasers

KW - finite-element analysis

KW - INP

KW - wafer fusion

KW - MU-M

KW - thermal resistance

KW - optimization

KW - surface-emitting lasers

KW - finite-element-analysis

KW - semiconductor disk lasers

KW - high-power

KW - wavelength

KW - thermal management

KW - near-infrared

KW - AlGaAs mirrors

KW - lattice

KW - mismatched

KW - active regions

KW - matched

KW - thermal conductivity

KW - heat pumps

KW - conductivity

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JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 3

ER -

Thermal management of near-infrared semiconductor disk lasers with AlGaAs mirrors and lattice (mis)matched active regions

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Keywords

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