Thermal management of near-infrared semiconductor disk lasers with AlGaAs mirrors and lattice (mis)matched active regions

S. L. Vetter, S. Calvez

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

A detailed finite-element analysis of the thermal characteristics of semiconductor disk lasers with AlGaAs mirrors is presented. A comparison of the thermal resistance of devices operating in the 1200-1600 nm wavelength range using either lattice-matched GaAs-based active regions or lattice-mismatched InP-based active regions is performed and reveals similar performance. A variety of semiconductor chip design, mounting, and pumping strategies are subsequently investigated to help define guidelines for an effective thermal management of these devices. As it could be anticipated, the results suggest that best thermal performance is generally achieved when the heat extraction path is minimized.

LanguageEnglish
Pages345-352
Number of pages8
JournalIEEE Journal of Quantum Electronics
Volume48
Issue number3
DOIs
Publication statusPublished - Mar 2012

Fingerprint

Videodisks
Temperature control
Crystal lattices
aluminum gallium arsenides
Semiconductor materials
mirrors
Infrared radiation
mounting
thermal resistance
lasers
pumping
chips
Mountings
Heat resistance
heat
wavelengths
Finite element method
Wavelength
Hot Temperature

Keywords

  • thermal model
  • VECSELS
  • surface emitting lasers
  • finite-element analysis
  • INP
  • wafer fusion
  • MU-M
  • thermal resistance
  • optimization
  • surface-emitting lasers
  • finite-element-analysis
  • semiconductor disk lasers
  • high-power
  • wavelength
  • thermal management
  • near-infrared
  • AlGaAs mirrors
  • lattice
  • mismatched
  • active regions
  • matched
  • thermal conductivity
  • heat pumps
  • conductivity

Cite this

@article{e20b616995b647588fed551ecc1efeae,
title = "Thermal management of near-infrared semiconductor disk lasers with AlGaAs mirrors and lattice (mis)matched active regions",
abstract = "A detailed finite-element analysis of the thermal characteristics of semiconductor disk lasers with AlGaAs mirrors is presented. A comparison of the thermal resistance of devices operating in the 1200-1600 nm wavelength range using either lattice-matched GaAs-based active regions or lattice-mismatched InP-based active regions is performed and reveals similar performance. A variety of semiconductor chip design, mounting, and pumping strategies are subsequently investigated to help define guidelines for an effective thermal management of these devices. As it could be anticipated, the results suggest that best thermal performance is generally achieved when the heat extraction path is minimized.",
keywords = "thermal model, VECSELS, surface emitting lasers, finite-element analysis, INP, wafer fusion, MU-M, thermal resistance, optimization, surface-emitting lasers, finite-element-analysis, semiconductor disk lasers, high-power, wavelength, thermal management, near-infrared , AlGaAs mirrors , lattice, mismatched, active regions, matched, thermal conductivity, heat pumps, conductivity",
author = "Vetter, {S. L.} and S. Calvez",
year = "2012",
month = "3",
doi = "10.1109/JQE.2011.2180703",
language = "English",
volume = "48",
pages = "345--352",
journal = "IEEE Journal of Quantum Electronics",
issn = "0018-9197",
number = "3",

}

Thermal management of near-infrared semiconductor disk lasers with AlGaAs mirrors and lattice (mis)matched active regions. / Vetter, S. L.; Calvez, S.

In: IEEE Journal of Quantum Electronics, Vol. 48, No. 3, 03.2012, p. 345-352.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Thermal management of near-infrared semiconductor disk lasers with AlGaAs mirrors and lattice (mis)matched active regions

AU - Vetter, S. L.

AU - Calvez, S.

PY - 2012/3

Y1 - 2012/3

N2 - A detailed finite-element analysis of the thermal characteristics of semiconductor disk lasers with AlGaAs mirrors is presented. A comparison of the thermal resistance of devices operating in the 1200-1600 nm wavelength range using either lattice-matched GaAs-based active regions or lattice-mismatched InP-based active regions is performed and reveals similar performance. A variety of semiconductor chip design, mounting, and pumping strategies are subsequently investigated to help define guidelines for an effective thermal management of these devices. As it could be anticipated, the results suggest that best thermal performance is generally achieved when the heat extraction path is minimized.

AB - A detailed finite-element analysis of the thermal characteristics of semiconductor disk lasers with AlGaAs mirrors is presented. A comparison of the thermal resistance of devices operating in the 1200-1600 nm wavelength range using either lattice-matched GaAs-based active regions or lattice-mismatched InP-based active regions is performed and reveals similar performance. A variety of semiconductor chip design, mounting, and pumping strategies are subsequently investigated to help define guidelines for an effective thermal management of these devices. As it could be anticipated, the results suggest that best thermal performance is generally achieved when the heat extraction path is minimized.

KW - thermal model

KW - VECSELS

KW - surface emitting lasers

KW - finite-element analysis

KW - INP

KW - wafer fusion

KW - MU-M

KW - thermal resistance

KW - optimization

KW - surface-emitting lasers

KW - finite-element-analysis

KW - semiconductor disk lasers

KW - high-power

KW - wavelength

KW - thermal management

KW - near-infrared

KW - AlGaAs mirrors

KW - lattice

KW - mismatched

KW - active regions

KW - matched

KW - thermal conductivity

KW - heat pumps

KW - conductivity

UR - http://www.scopus.com/inward/record.url?scp=84856526063&partnerID=8YFLogxK

U2 - 10.1109/JQE.2011.2180703

DO - 10.1109/JQE.2011.2180703

M3 - Article

VL - 48

SP - 345

EP - 352

JO - IEEE Journal of Quantum Electronics

T2 - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

IS - 3

ER -