Abstract
High conductivity intra-cavity crystalline heatspreaders are used to control the pumpinduced temperature increase limiting the power scaling of VECSELs. Output powers of greater than 100mW were achieved at room temperature using both sapphire and SiC.
Original language | English |
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Publication status | Unpublished - 26 Jun 2002 |
Event | International Quantum Electronics Conference/ Conference on Lasers, Applications, and Technologies (IQEC/LAT 2002) - Moscow, Russia Duration: 22 Jun 2002 → 28 Jun 2002 |
Conference
Conference | International Quantum Electronics Conference/ Conference on Lasers, Applications, and Technologies (IQEC/LAT 2002) |
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City | Moscow, Russia |
Period | 22/06/02 → 28/06/02 |
Keywords
- thermal management
- AlGaAs
- VECSELs
- intracavity sapphire
- silicon carbide
- heatspreaders