Thermal management of AlGaAs VECSELs using intracavity sapphire and silicon carbide heatspreaders

J.E. Hastie, C.W. Jeon, J.M. Hopkins, D. Burns, M.D. Dawson

Research output: Contribution to conference › Paper

Abstract

High conductivity intra-cavity crystalline heatspreaders are used to control the pumpinduced temperature increase limiting the power scaling of VECSELs. Output powers of greater than 100mW were achieved at room temperature using both sapphire and SiC.
Original languageEnglish
Publication statusUnpublished - 26 Jun 2002
EventInternational Quantum Electronics Conference/ Conference on Lasers, Applications, and Technologies (IQEC/LAT 2002) - Moscow, Russia
Duration: 22 Jun 2002 → 28 Jun 2002

Conference

ConferenceInternational Quantum Electronics Conference/ Conference on Lasers, Applications, and Technologies (IQEC/LAT 2002)
CityMoscow, Russia
Period22/06/02 → 28/06/02

Keywords

  • thermal management
  • AlGaAs
  • VECSELs
  • intracavity sapphire
  • silicon carbide
  • heatspreaders

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    Hastie, J. E., Jeon, C. W., Hopkins, J. M., Burns, D., & Dawson, M. D. (2002). Thermal management of AlGaAs VECSELs using intracavity sapphire and silicon carbide heatspreaders. Paper presented at International Quantum Electronics Conference/ Conference on Lasers, Applications, and Technologies (IQEC/LAT 2002), Moscow, Russia, .