Thermal management of AlGaAs VECSELs using intracavity sapphire and silicon carbide heatspreaders

J.E. Hastie; C.W. Jeon; J.M. Hopkins; D. Burns; M.D. Dawson

Thermal management of AlGaAs VECSELs using intracavity sapphire and silicon carbide heatspreaders

J.E. Hastie, C.W. Jeon, J.M. Hopkins, D. Burns, M.D. Dawson

Institute Of Photonics

Research output: Contribution to conference › Paper › peer-review

Abstract

High conductivity intra-cavity crystalline heatspreaders are used to control the pumpinduced temperature increase limiting the power scaling of VECSELs. Output powers of greater than 100mW were achieved at room temperature using both sapphire and SiC.

Original language	English
Publication status	Unpublished - 26 Jun 2002
Event	International Quantum Electronics Conference/ Conference on Lasers, Applications, and Technologies (IQEC/LAT 2002) - Moscow, Russia Duration: 22 Jun 2002 → 28 Jun 2002

Conference

Conference	International Quantum Electronics Conference/ Conference on Lasers, Applications, and Technologies (IQEC/LAT 2002)
City	Moscow, Russia
Period	22/06/02 → 28/06/02

Keywords

thermal management
AlGaAs
VECSELs
intracavity sapphire
silicon carbide
heatspreaders

Cite this

@conference{e17ecc52d4c142fb94e5b1acaf6b9def,

title = "Thermal management of AlGaAs VECSELs using intracavity sapphire and silicon carbide heatspreaders",

abstract = "High conductivity intra-cavity crystalline heatspreaders are used to control the pumpinduced temperature increase limiting the power scaling of VECSELs. Output powers of greater than 100mW were achieved at room temperature using both sapphire and SiC.",

keywords = "thermal management, AlGaAs, VECSELs, intracavity sapphire, silicon carbide, heatspreaders",

author = "J.E. Hastie and C.W. Jeon and J.M. Hopkins and D. Burns and M.D. Dawson",

year = "2002",

month = jun,

day = "26",

language = "English",

note = "International Quantum Electronics Conference/ Conference on Lasers, Applications, and Technologies (IQEC/LAT 2002) ; Conference date: 22-06-2002 Through 28-06-2002",

}

Thermal management of AlGaAs VECSELs using intracavity sapphire and silicon carbide heatspreaders. / Hastie, J.E.; Jeon, C.W.; Hopkins, J.M.; Burns, D.; Dawson, M.D.

2002. Paper presented at International Quantum Electronics Conference/ Conference on Lasers, Applications, and Technologies (IQEC/LAT 2002), Moscow, Russia.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Thermal management of AlGaAs VECSELs using intracavity sapphire and silicon carbide heatspreaders

AU - Hastie, J.E.

AU - Jeon, C.W.

AU - Hopkins, J.M.

AU - Burns, D.

AU - Dawson, M.D.

PY - 2002/6/26

Y1 - 2002/6/26

N2 - High conductivity intra-cavity crystalline heatspreaders are used to control the pumpinduced temperature increase limiting the power scaling of VECSELs. Output powers of greater than 100mW were achieved at room temperature using both sapphire and SiC.

AB - High conductivity intra-cavity crystalline heatspreaders are used to control the pumpinduced temperature increase limiting the power scaling of VECSELs. Output powers of greater than 100mW were achieved at room temperature using both sapphire and SiC.

KW - thermal management

KW - AlGaAs

KW - VECSELs

KW - intracavity sapphire

KW - silicon carbide

KW - heatspreaders

UR - http://congress.phys.msu.su/iqec-lat-2002/download/advance/june26.pdf

M3 - Paper

T2 - International Quantum Electronics Conference/ Conference on Lasers, Applications, and Technologies (IQEC/LAT 2002)

Y2 - 22 June 2002 through 28 June 2002

ER -

Thermal management of AlGaAs VECSELs using intracavity sapphire and silicon carbide heatspreaders

Abstract

Conference

Keywords

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