Thermal management of AlGaAs VECSELs using intracavity sapphire and silicon carbide heatspreaders

J.E. Hastie, C.W. Jeon, J.M. Hopkins, D. Burns, M.D. Dawson

Research output: Contribution to conferencePaper

Abstract

High conductivity intra-cavity crystalline heatspreaders are used to control the pumpinduced temperature increase limiting the power scaling of VECSELs. Output powers of greater than 100mW were achieved at room temperature using both sapphire and SiC.

Conference

ConferenceInternational Quantum Electronics Conference/ Conference on Lasers, Applications, and Technologies (IQEC/LAT 2002)
CityMoscow, Russia
Period22/06/0228/06/02

Fingerprint

Temperature control
Sapphire
Silicon carbide
Crystalline materials
Temperature

Keywords

  • thermal management
  • AlGaAs
  • VECSELs
  • intracavity sapphire
  • silicon carbide
  • heatspreaders

Cite this

Hastie, J. E., Jeon, C. W., Hopkins, J. M., Burns, D., & Dawson, M. D. (2002). Thermal management of AlGaAs VECSELs using intracavity sapphire and silicon carbide heatspreaders. Paper presented at International Quantum Electronics Conference/ Conference on Lasers, Applications, and Technologies (IQEC/LAT 2002), Moscow, Russia, .
Hastie, J.E. ; Jeon, C.W. ; Hopkins, J.M. ; Burns, D. ; Dawson, M.D. / Thermal management of AlGaAs VECSELs using intracavity sapphire and silicon carbide heatspreaders. Paper presented at International Quantum Electronics Conference/ Conference on Lasers, Applications, and Technologies (IQEC/LAT 2002), Moscow, Russia, .
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title = "Thermal management of AlGaAs VECSELs using intracavity sapphire and silicon carbide heatspreaders",
abstract = "High conductivity intra-cavity crystalline heatspreaders are used to control the pumpinduced temperature increase limiting the power scaling of VECSELs. Output powers of greater than 100mW were achieved at room temperature using both sapphire and SiC.",
keywords = "thermal management, AlGaAs, VECSELs, intracavity sapphire, silicon carbide, heatspreaders",
author = "J.E. Hastie and C.W. Jeon and J.M. Hopkins and D. Burns and M.D. Dawson",
year = "2002",
month = "6",
day = "26",
language = "English",
note = "International Quantum Electronics Conference/ Conference on Lasers, Applications, and Technologies (IQEC/LAT 2002) ; Conference date: 22-06-2002 Through 28-06-2002",

}

Hastie, JE, Jeon, CW, Hopkins, JM, Burns, D & Dawson, MD 2002, 'Thermal management of AlGaAs VECSELs using intracavity sapphire and silicon carbide heatspreaders' Paper presented at International Quantum Electronics Conference/ Conference on Lasers, Applications, and Technologies (IQEC/LAT 2002), Moscow, Russia, 22/06/02 - 28/06/02, .

Thermal management of AlGaAs VECSELs using intracavity sapphire and silicon carbide heatspreaders. / Hastie, J.E.; Jeon, C.W.; Hopkins, J.M.; Burns, D.; Dawson, M.D.

2002. Paper presented at International Quantum Electronics Conference/ Conference on Lasers, Applications, and Technologies (IQEC/LAT 2002), Moscow, Russia, .

Research output: Contribution to conferencePaper

TY - CONF

T1 - Thermal management of AlGaAs VECSELs using intracavity sapphire and silicon carbide heatspreaders

AU - Hastie, J.E.

AU - Jeon, C.W.

AU - Hopkins, J.M.

AU - Burns, D.

AU - Dawson, M.D.

PY - 2002/6/26

Y1 - 2002/6/26

N2 - High conductivity intra-cavity crystalline heatspreaders are used to control the pumpinduced temperature increase limiting the power scaling of VECSELs. Output powers of greater than 100mW were achieved at room temperature using both sapphire and SiC.

AB - High conductivity intra-cavity crystalline heatspreaders are used to control the pumpinduced temperature increase limiting the power scaling of VECSELs. Output powers of greater than 100mW were achieved at room temperature using both sapphire and SiC.

KW - thermal management

KW - AlGaAs

KW - VECSELs

KW - intracavity sapphire

KW - silicon carbide

KW - heatspreaders

UR - http://congress.phys.msu.su/iqec-lat-2002/download/advance/june26.pdf

M3 - Paper

ER -

Hastie JE, Jeon CW, Hopkins JM, Burns D, Dawson MD. Thermal management of AlGaAs VECSELs using intracavity sapphire and silicon carbide heatspreaders. 2002. Paper presented at International Quantum Electronics Conference/ Conference on Lasers, Applications, and Technologies (IQEC/LAT 2002), Moscow, Russia, .