Thermal instability in two-finger bipolar transistors

N. Nenadovic, V. D'Alessandro, F. Tamigi, A. Rossi, A. Griffo, L. K. Nanver, J. W. Slotboom

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

12 Citations (Scopus)

Abstract

A novel analytical formulation for the biasing condition leading to thermal instability in a two-finger bipolar transistor is derived. The temperature dependence of the current gain as well as the mutual thermal coupling is accounted for. Different technologies are compared by varying the model parameters. It is demonstrated that SiGe devices are more thermally stable than comparable Si devices. Finally, the influence of the substrate modification on thermal instability is investigated. It is shown that thermally conducting substrates are needed to electro-thermally stabilize bipolar transistors. © 2003 IEEE.

LanguageEnglish
Title of host publicationESSDERC 2003 - Proceedings of the 33rd European Solid-State Device Research Conference
EditorsJose Franca, Paulo Freitas
Place of PublicationPiscataway, NJ.
Pages203-206
Number of pages4
ISBN (Electronic)0780379993
DOIs
Publication statusPublished - 30 Sep 2003
Event33rd European Solid-State Device Research Conference, ESSDERC 2003 - Estoril, Portugal
Duration: 16 Sep 200318 Sep 2003

Conference

Conference33rd European Solid-State Device Research Conference, ESSDERC 2003
CountryPortugal
CityEstoril
Period16/09/0318/09/03

Fingerprint

Bipolar transistors
Substrates
Hot Temperature
Temperature

Keywords

  • thermal instabilities
  • two-finger bipolar transistors

Cite this

Nenadovic, N., D'Alessandro, V., Tamigi, F., Rossi, A., Griffo, A., Nanver, L. K., & Slotboom, J. W. (2003). Thermal instability in two-finger bipolar transistors. In J. Franca, & P. Freitas (Eds.), ESSDERC 2003 - Proceedings of the 33rd European Solid-State Device Research Conference (pp. 203-206). [1256849] Piscataway, NJ.. https://doi.org/10.1109/ESSDERC.2003.1256849
Nenadovic, N. ; D'Alessandro, V. ; Tamigi, F. ; Rossi, A. ; Griffo, A. ; Nanver, L. K. ; Slotboom, J. W. / Thermal instability in two-finger bipolar transistors. ESSDERC 2003 - Proceedings of the 33rd European Solid-State Device Research Conference. editor / Jose Franca ; Paulo Freitas. Piscataway, NJ., 2003. pp. 203-206
@inproceedings{57bcfbb24e164c3f98ed5bfd6ed659b4,
title = "Thermal instability in two-finger bipolar transistors",
abstract = "A novel analytical formulation for the biasing condition leading to thermal instability in a two-finger bipolar transistor is derived. The temperature dependence of the current gain as well as the mutual thermal coupling is accounted for. Different technologies are compared by varying the model parameters. It is demonstrated that SiGe devices are more thermally stable than comparable Si devices. Finally, the influence of the substrate modification on thermal instability is investigated. It is shown that thermally conducting substrates are needed to electro-thermally stabilize bipolar transistors. {\circledC} 2003 IEEE.",
keywords = "thermal instabilities, two-finger bipolar transistors",
author = "N. Nenadovic and V. D'Alessandro and F. Tamigi and A. Rossi and A. Griffo and Nanver, {L. K.} and Slotboom, {J. W.}",
year = "2003",
month = "9",
day = "30",
doi = "10.1109/ESSDERC.2003.1256849",
language = "English",
isbn = "9780780379992",
pages = "203--206",
editor = "Jose Franca and Paulo Freitas",
booktitle = "ESSDERC 2003 - Proceedings of the 33rd European Solid-State Device Research Conference",

}

Nenadovic, N, D'Alessandro, V, Tamigi, F, Rossi, A, Griffo, A, Nanver, LK & Slotboom, JW 2003, Thermal instability in two-finger bipolar transistors. in J Franca & P Freitas (eds), ESSDERC 2003 - Proceedings of the 33rd European Solid-State Device Research Conference., 1256849, Piscataway, NJ., pp. 203-206, 33rd European Solid-State Device Research Conference, ESSDERC 2003, Estoril, Portugal, 16/09/03. https://doi.org/10.1109/ESSDERC.2003.1256849

Thermal instability in two-finger bipolar transistors. / Nenadovic, N.; D'Alessandro, V.; Tamigi, F.; Rossi, A.; Griffo, A.; Nanver, L. K.; Slotboom, J. W.

ESSDERC 2003 - Proceedings of the 33rd European Solid-State Device Research Conference. ed. / Jose Franca; Paulo Freitas. Piscataway, NJ., 2003. p. 203-206 1256849.

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

TY - GEN

T1 - Thermal instability in two-finger bipolar transistors

AU - Nenadovic, N.

AU - D'Alessandro, V.

AU - Tamigi, F.

AU - Rossi, A.

AU - Griffo, A.

AU - Nanver, L. K.

AU - Slotboom, J. W.

PY - 2003/9/30

Y1 - 2003/9/30

N2 - A novel analytical formulation for the biasing condition leading to thermal instability in a two-finger bipolar transistor is derived. The temperature dependence of the current gain as well as the mutual thermal coupling is accounted for. Different technologies are compared by varying the model parameters. It is demonstrated that SiGe devices are more thermally stable than comparable Si devices. Finally, the influence of the substrate modification on thermal instability is investigated. It is shown that thermally conducting substrates are needed to electro-thermally stabilize bipolar transistors. © 2003 IEEE.

AB - A novel analytical formulation for the biasing condition leading to thermal instability in a two-finger bipolar transistor is derived. The temperature dependence of the current gain as well as the mutual thermal coupling is accounted for. Different technologies are compared by varying the model parameters. It is demonstrated that SiGe devices are more thermally stable than comparable Si devices. Finally, the influence of the substrate modification on thermal instability is investigated. It is shown that thermally conducting substrates are needed to electro-thermally stabilize bipolar transistors. © 2003 IEEE.

KW - thermal instabilities

KW - two-finger bipolar transistors

UR - http://www.scopus.com/inward/record.url?scp=70449600239&partnerID=8YFLogxK

U2 - 10.1109/ESSDERC.2003.1256849

DO - 10.1109/ESSDERC.2003.1256849

M3 - Conference contribution book

SN - 9780780379992

SP - 203

EP - 206

BT - ESSDERC 2003 - Proceedings of the 33rd European Solid-State Device Research Conference

A2 - Franca, Jose

A2 - Freitas, Paulo

CY - Piscataway, NJ.

ER -

Nenadovic N, D'Alessandro V, Tamigi F, Rossi A, Griffo A, Nanver LK et al. Thermal instability in two-finger bipolar transistors. In Franca J, Freitas P, editors, ESSDERC 2003 - Proceedings of the 33rd European Solid-State Device Research Conference. Piscataway, NJ. 2003. p. 203-206. 1256849 https://doi.org/10.1109/ESSDERC.2003.1256849