Thermal instability in two-finger bipolar transistors

N. Nenadovic, V. D'Alessandro, F. Tamigi, A. Rossi, A. Griffo, L. K. Nanver, J. W. Slotboom

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

12 Citations (Scopus)

Abstract

A novel analytical formulation for the biasing condition leading to thermal instability in a two-finger bipolar transistor is derived. The temperature dependence of the current gain as well as the mutual thermal coupling is accounted for. Different technologies are compared by varying the model parameters. It is demonstrated that SiGe devices are more thermally stable than comparable Si devices. Finally, the influence of the substrate modification on thermal instability is investigated. It is shown that thermally conducting substrates are needed to electro-thermally stabilize bipolar transistors. © 2003 IEEE.

Original languageEnglish
Title of host publicationESSDERC 2003 - Proceedings of the 33rd European Solid-State Device Research Conference
EditorsJose Franca, Paulo Freitas
Place of PublicationPiscataway, NJ.
Pages203-206
Number of pages4
ISBN (Electronic)0780379993
DOIs
Publication statusPublished - 30 Sep 2003
Event33rd European Solid-State Device Research Conference, ESSDERC 2003 - Estoril, Portugal
Duration: 16 Sep 200318 Sep 2003

Conference

Conference33rd European Solid-State Device Research Conference, ESSDERC 2003
CountryPortugal
CityEstoril
Period16/09/0318/09/03

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Keywords

  • thermal instabilities
  • two-finger bipolar transistors

Cite this

Nenadovic, N., D'Alessandro, V., Tamigi, F., Rossi, A., Griffo, A., Nanver, L. K., & Slotboom, J. W. (2003). Thermal instability in two-finger bipolar transistors. In J. Franca, & P. Freitas (Eds.), ESSDERC 2003 - Proceedings of the 33rd European Solid-State Device Research Conference (pp. 203-206). [1256849] Piscataway, NJ.. https://doi.org/10.1109/ESSDERC.2003.1256849