Thermal-error regime in high-accuracy gigahertz single-electron pumping

R. Zhao, A. Rossi, S. P. Giblin, J. D. Fletcher, F. E. Hudson, M. Möttönen, M. Kataoka, A. S. Dzurak

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Single-electron pumps based on semiconductor quantum dots are promising candidates for the emerging quantum standard of electrical current. They can transfer discrete charges with part-per-million (ppm) precision in nanosecond time scales. Here, we employ a metal-oxide-semiconductor silicon quantum dot to experimentally demonstrate high-accuracy gigahertz single-electron pumping in the regime where the number of electrons trapped in the dot is determined by the thermal distribution in the reservoir leads. In a measurement with traceability to primary voltage and resistance standards, the averaged pump current over the quantized plateau, driven by a 1-GHz sinusoidal wave in the absence of a magnetic field, is equal to the ideal value of ef within a measurement uncertainty as low as 0.27 ppm.

LanguageEnglish
Article number044021
Number of pages8
JournalPhysical Review Applied
Volume8
Issue number4
DOIs
Publication statusPublished - 30 Oct 2017

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electron pumping
quantum dots
pumps
metal oxide semiconductors
emerging
plateaus
electrons
electric potential
silicon
magnetic fields

Keywords

  • single electron pump
  • quantum dots
  • acoustic waves

Cite this

Zhao, R., Rossi, A., Giblin, S. P., Fletcher, J. D., Hudson, F. E., Möttönen, M., ... Dzurak, A. S. (2017). Thermal-error regime in high-accuracy gigahertz single-electron pumping. Physical Review Applied, 8(4), [044021]. https://doi.org/10.1103/PhysRevApplied.8.044021
Zhao, R. ; Rossi, A. ; Giblin, S. P. ; Fletcher, J. D. ; Hudson, F. E. ; Möttönen, M. ; Kataoka, M. ; Dzurak, A. S. / Thermal-error regime in high-accuracy gigahertz single-electron pumping. In: Physical Review Applied. 2017 ; Vol. 8, No. 4.
@article{d88ec6278539465cb2ca3c02c6d8759c,
title = "Thermal-error regime in high-accuracy gigahertz single-electron pumping",
abstract = "Single-electron pumps based on semiconductor quantum dots are promising candidates for the emerging quantum standard of electrical current. They can transfer discrete charges with part-per-million (ppm) precision in nanosecond time scales. Here, we employ a metal-oxide-semiconductor silicon quantum dot to experimentally demonstrate high-accuracy gigahertz single-electron pumping in the regime where the number of electrons trapped in the dot is determined by the thermal distribution in the reservoir leads. In a measurement with traceability to primary voltage and resistance standards, the averaged pump current over the quantized plateau, driven by a 1-GHz sinusoidal wave in the absence of a magnetic field, is equal to the ideal value of ef within a measurement uncertainty as low as 0.27 ppm.",
keywords = "single electron pump, quantum dots, acoustic waves",
author = "R. Zhao and A. Rossi and Giblin, {S. P.} and Fletcher, {J. D.} and Hudson, {F. E.} and M. M{\"o}tt{\"o}nen and M. Kataoka and Dzurak, {A. S.}",
year = "2017",
month = "10",
day = "30",
doi = "10.1103/PhysRevApplied.8.044021",
language = "English",
volume = "8",
journal = "Physical Review Applied",
issn = "2331-7019",
number = "4",

}

Zhao, R, Rossi, A, Giblin, SP, Fletcher, JD, Hudson, FE, Möttönen, M, Kataoka, M & Dzurak, AS 2017, 'Thermal-error regime in high-accuracy gigahertz single-electron pumping' Physical Review Applied, vol. 8, no. 4, 044021. https://doi.org/10.1103/PhysRevApplied.8.044021

Thermal-error regime in high-accuracy gigahertz single-electron pumping. / Zhao, R.; Rossi, A.; Giblin, S. P.; Fletcher, J. D.; Hudson, F. E.; Möttönen, M.; Kataoka, M.; Dzurak, A. S.

In: Physical Review Applied, Vol. 8, No. 4, 044021, 30.10.2017.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Thermal-error regime in high-accuracy gigahertz single-electron pumping

AU - Zhao, R.

AU - Rossi, A.

AU - Giblin, S. P.

AU - Fletcher, J. D.

AU - Hudson, F. E.

AU - Möttönen, M.

AU - Kataoka, M.

AU - Dzurak, A. S.

PY - 2017/10/30

Y1 - 2017/10/30

N2 - Single-electron pumps based on semiconductor quantum dots are promising candidates for the emerging quantum standard of electrical current. They can transfer discrete charges with part-per-million (ppm) precision in nanosecond time scales. Here, we employ a metal-oxide-semiconductor silicon quantum dot to experimentally demonstrate high-accuracy gigahertz single-electron pumping in the regime where the number of electrons trapped in the dot is determined by the thermal distribution in the reservoir leads. In a measurement with traceability to primary voltage and resistance standards, the averaged pump current over the quantized plateau, driven by a 1-GHz sinusoidal wave in the absence of a magnetic field, is equal to the ideal value of ef within a measurement uncertainty as low as 0.27 ppm.

AB - Single-electron pumps based on semiconductor quantum dots are promising candidates for the emerging quantum standard of electrical current. They can transfer discrete charges with part-per-million (ppm) precision in nanosecond time scales. Here, we employ a metal-oxide-semiconductor silicon quantum dot to experimentally demonstrate high-accuracy gigahertz single-electron pumping in the regime where the number of electrons trapped in the dot is determined by the thermal distribution in the reservoir leads. In a measurement with traceability to primary voltage and resistance standards, the averaged pump current over the quantized plateau, driven by a 1-GHz sinusoidal wave in the absence of a magnetic field, is equal to the ideal value of ef within a measurement uncertainty as low as 0.27 ppm.

KW - single electron pump

KW - quantum dots

KW - acoustic waves

UR - http://www.scopus.com/inward/record.url?scp=85032926238&partnerID=8YFLogxK

UR - https://www.repository.cam.ac.uk/handle/1810/271600

U2 - 10.1103/PhysRevApplied.8.044021

DO - 10.1103/PhysRevApplied.8.044021

M3 - Article

VL - 8

JO - Physical Review Applied

T2 - Physical Review Applied

JF - Physical Review Applied

SN - 2331-7019

IS - 4

M1 - 044021

ER -