Thermal conductance of laterally-wet-oxidised GaAs/AlxOy Bragg reflectors

M. Le Du, David Massoubre, J.C. Harmand, J.L. Oudar

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Abstract

Thermal resistivity measurements were carried out on GaAs-based monolithic saturable absorber microcavities. Two-types of microcavity mirrors were compared: GaAs/AlAs against GaAs/AlxOy Bragg reflectors processed by lateral-wet-oxidation of Al(Ga)As layers. It is found that GaAs/AlxOy mirrors are not efficient heat dissipators, the GaAs/AlxOy microcavity structure showing a thermal resistivity more than ten times higher than the GaAs/AlAs structure. Using modelling to fit the experimental data, thermal conductivity of the 250 nm AlxOy layers is estimated to be approximately 0.007 WK–1cm–1. These results illustrate a significant drawback related to the use of thick wet-oxidised Al(Ga)As/GaAs layers
Original languageEnglish
Pages (from-to)1060-1062
Number of pages3
JournalElectronics Letters
Volume42
Issue number18
DOIs
Publication statusPublished - 1 Aug 2006

Keywords

  • thermal conductance
  • Bragg reflectors
  • thermal conductivity
  • thermal resistivity measurements
  • GaAs-based absorber microcavities
  • microcavity mirrors
  • monolithic absorber microcavities
  • lateral-wet-oxidation
  • saturable absorber microcavities

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    Le Du, M., Massoubre, D., Harmand, J. C., & Oudar, J. L. (2006). Thermal conductance of laterally-wet-oxidised GaAs/AlxOy Bragg reflectors. Electronics Letters, 42(18), 1060-1062. https://doi.org/10.1049/el:20062192