Thermal conductance of laterally-wet-oxidised GaAs/AlxOy Bragg reflectors

M. Le Du; David Massoubre; J.C. Harmand; J.L. Oudar

doi:10.1049/el:20062192

Thermal conductance of laterally-wet-oxidised GaAs/AlxOy Bragg reflectors

M. Le Du, David Massoubre, J.C. Harmand, J.L. Oudar

Institute Of Photonics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Thermal resistivity measurements were carried out on GaAs-based monolithic saturable absorber microcavities. Two-types of microcavity mirrors were compared: GaAs/AlAs against GaAs/AlxOy Bragg reflectors processed by lateral-wet-oxidation of Al(Ga)As layers. It is found that GaAs/AlxOy mirrors are not efficient heat dissipators, the GaAs/AlxOy microcavity structure showing a thermal resistivity more than ten times higher than the GaAs/AlAs structure. Using modelling to fit the experimental data, thermal conductivity of the 250 nm AlxOy layers is estimated to be approximately 0.007 WK–1cm–1. These results illustrate a significant drawback related to the use of thick wet-oxidised Al(Ga)As/GaAs layers

Original language	English
Pages (from-to)	1060-1062
Number of pages	3
Journal	Electronics Letters
Volume	42
Issue number	18
DOIs	https://doi.org/10.1049/el:20062192
Publication status	Published - 1 Aug 2006

Keywords

thermal conductance
Bragg reflectors
thermal conductivity
thermal resistivity measurements
GaAs-based absorber microcavities
microcavity mirrors
monolithic absorber microcavities
lateral-wet-oxidation
saturable absorber microcavities

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10.1049/el:20062192

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@article{295794d21b0a48e985f2da3e1ed251f5,

title = "Thermal conductance of laterally-wet-oxidised GaAs/AlxOy Bragg reflectors",

abstract = "Thermal resistivity measurements were carried out on GaAs-based monolithic saturable absorber microcavities. Two-types of microcavity mirrors were compared: GaAs/AlAs against GaAs/AlxOy Bragg reflectors processed by lateral-wet-oxidation of Al(Ga)As layers. It is found that GaAs/AlxOy mirrors are not efficient heat dissipators, the GaAs/AlxOy microcavity structure showing a thermal resistivity more than ten times higher than the GaAs/AlAs structure. Using modelling to fit the experimental data, thermal conductivity of the 250 nm AlxOy layers is estimated to be approximately 0.007 WK–1cm–1. These results illustrate a significant drawback related to the use of thick wet-oxidised Al(Ga)As/GaAs layers",

keywords = "thermal conductance, Bragg reflectors, thermal conductivity , thermal resistivity measurements, GaAs-based absorber microcavities, microcavity mirrors, monolithic absorber microcavities, lateral-wet-oxidation , saturable absorber microcavities ",

author = "{Le Du}, M. and David Massoubre and J.C. Harmand and J.L. Oudar",

year = "2006",

month = aug,

day = "1",

doi = "10.1049/el:20062192",

language = "English",

volume = "42",

pages = "1060--1062",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "18",

}

TY - JOUR

T1 - Thermal conductance of laterally-wet-oxidised GaAs/AlxOy Bragg reflectors

AU - Le Du, M.

AU - Massoubre, David

AU - Harmand, J.C.

AU - Oudar, J.L.

PY - 2006/8/1

Y1 - 2006/8/1

N2 - Thermal resistivity measurements were carried out on GaAs-based monolithic saturable absorber microcavities. Two-types of microcavity mirrors were compared: GaAs/AlAs against GaAs/AlxOy Bragg reflectors processed by lateral-wet-oxidation of Al(Ga)As layers. It is found that GaAs/AlxOy mirrors are not efficient heat dissipators, the GaAs/AlxOy microcavity structure showing a thermal resistivity more than ten times higher than the GaAs/AlAs structure. Using modelling to fit the experimental data, thermal conductivity of the 250 nm AlxOy layers is estimated to be approximately 0.007 WK–1cm–1. These results illustrate a significant drawback related to the use of thick wet-oxidised Al(Ga)As/GaAs layers

AB - Thermal resistivity measurements were carried out on GaAs-based monolithic saturable absorber microcavities. Two-types of microcavity mirrors were compared: GaAs/AlAs against GaAs/AlxOy Bragg reflectors processed by lateral-wet-oxidation of Al(Ga)As layers. It is found that GaAs/AlxOy mirrors are not efficient heat dissipators, the GaAs/AlxOy microcavity structure showing a thermal resistivity more than ten times higher than the GaAs/AlAs structure. Using modelling to fit the experimental data, thermal conductivity of the 250 nm AlxOy layers is estimated to be approximately 0.007 WK–1cm–1. These results illustrate a significant drawback related to the use of thick wet-oxidised Al(Ga)As/GaAs layers

KW - thermal conductance

KW - Bragg reflectors

KW - thermal conductivity

KW - thermal resistivity measurements

KW - GaAs-based absorber microcavities

KW - microcavity mirrors

KW - monolithic absorber microcavities

KW - lateral-wet-oxidation

KW - saturable absorber microcavities

U2 - 10.1049/el:20062192

DO - 10.1049/el:20062192

M3 - Article

VL - 42

SP - 1060

EP - 1062

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 18

ER -

Thermal conductance of laterally-wet-oxidised GaAs/AlxOy Bragg reflectors

Abstract

Keywords

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