Theoretical modelling of rare Earth dopants in GaN

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Abstract

We review theoretical investigations into the structure and electrical activity of rare earth (RE) dopants in III-V semiconductors especially GaN. Substitutional rare earth dopants in GaN are found to be electrically inactive and require another defect to enable them to act as strong exciton traps. In contrast AlN is distinctive as it possesses a deep donor level. The electronic structure of complexes of the RE with other defects is discussed along with implications for efficient room temperature luminescence.
Original languageEnglish
Title of host publicationRare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications
EditorsKevin O'Donnell, Volkmar Dierolf
Place of PublicationDordrecht, The Netherlands
PublisherSpringer
Pages1-24
Number of pages24
ISBN (Print)9789048128761
DOIs
Publication statusPublished - 2010

Publication series

NameTopics in Applied Physics
PublisherSpringer
Volume124
ISSN (Print)0303-4216

Keywords

  • density-functional theory
  • EU-doped gan
  • space gaussian pseudopotentials
  • tight-binding approach
  • electronic-structure
  • implanted gan
  • self-interaction
  • optical properties
  • lattice location
  • gallium nitride

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