Theoretical modelling of rare Earth dopants in GaN

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

We review theoretical investigations into the structure and electrical activity of rare earth (RE) dopants in III-V semiconductors especially GaN. Substitutional rare earth dopants in GaN are found to be electrically inactive and require another defect to enable them to act as strong exciton traps. In contrast AlN is distinctive as it possesses a deep donor level. The electronic structure of complexes of the RE with other defects is discussed along with implications for efficient room temperature luminescence.
LanguageEnglish
Title of host publicationRare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications
EditorsKevin O'Donnell, Volkmar Dierolf
Place of PublicationDordrecht, The Netherlands
PublisherSpringer
Pages1-24
Number of pages24
ISBN (Print)9789048128761
DOIs
Publication statusPublished - 2010

Publication series

NameTopics in Applied Physics
PublisherSpringer
Volume124
ISSN (Print)0303-4216

Fingerprint

rare earth elements
defects
excitons
traps
luminescence
electronic structure
room temperature

Keywords

  • density-functional theory
  • EU-doped gan
  • space gaussian pseudopotentials
  • tight-binding approach
  • electronic-structure
  • implanted gan
  • self-interaction
  • optical properties
  • lattice location
  • gallium nitride

Cite this

Jones, R., & Hourahine, B. (2010). Theoretical modelling of rare Earth dopants in GaN. In K. O'Donnell, & V. Dierolf (Eds.), Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications (pp. 1-24). (Topics in Applied Physics; Vol. 124). Dordrecht, The Netherlands: Springer. https://doi.org/10.1007/978-90-481-2877-8
Jones, R. ; Hourahine, Benjamin. / Theoretical modelling of rare Earth dopants in GaN. Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications. editor / Kevin O'Donnell ; Volkmar Dierolf. Dordrecht, The Netherlands : Springer, 2010. pp. 1-24 (Topics in Applied Physics).
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Jones, R & Hourahine, B 2010, Theoretical modelling of rare Earth dopants in GaN. in K O'Donnell & V Dierolf (eds), Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications. Topics in Applied Physics, vol. 124, Springer, Dordrecht, The Netherlands, pp. 1-24. https://doi.org/10.1007/978-90-481-2877-8

Theoretical modelling of rare Earth dopants in GaN. / Jones, R.; Hourahine, Benjamin.

Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications. ed. / Kevin O'Donnell; Volkmar Dierolf. Dordrecht, The Netherlands : Springer, 2010. p. 1-24 (Topics in Applied Physics; Vol. 124).

Research output: Chapter in Book/Report/Conference proceedingChapter

TY - CHAP

T1 - Theoretical modelling of rare Earth dopants in GaN

AU - Jones, R.

AU - Hourahine, Benjamin

PY - 2010

Y1 - 2010

N2 - We review theoretical investigations into the structure and electrical activity of rare earth (RE) dopants in III-V semiconductors especially GaN. Substitutional rare earth dopants in GaN are found to be electrically inactive and require another defect to enable them to act as strong exciton traps. In contrast AlN is distinctive as it possesses a deep donor level. The electronic structure of complexes of the RE with other defects is discussed along with implications for efficient room temperature luminescence.

AB - We review theoretical investigations into the structure and electrical activity of rare earth (RE) dopants in III-V semiconductors especially GaN. Substitutional rare earth dopants in GaN are found to be electrically inactive and require another defect to enable them to act as strong exciton traps. In contrast AlN is distinctive as it possesses a deep donor level. The electronic structure of complexes of the RE with other defects is discussed along with implications for efficient room temperature luminescence.

KW - density-functional theory

KW - EU-doped gan

KW - space gaussian pseudopotentials

KW - tight-binding approach

KW - electronic-structure

KW - implanted gan

KW - self-interaction

KW - optical properties

KW - lattice location

KW - gallium nitride

U2 - 10.1007/978-90-481-2877-8

DO - 10.1007/978-90-481-2877-8

M3 - Chapter

SN - 9789048128761

T3 - Topics in Applied Physics

SP - 1

EP - 24

BT - Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications

A2 - O'Donnell, Kevin

A2 - Dierolf, Volkmar

PB - Springer

CY - Dordrecht, The Netherlands

ER -

Jones R, Hourahine B. Theoretical modelling of rare Earth dopants in GaN. In O'Donnell K, Dierolf V, editors, Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications. Dordrecht, The Netherlands: Springer. 2010. p. 1-24. (Topics in Applied Physics). https://doi.org/10.1007/978-90-481-2877-8