The simulation of charge sharing in semiconductor X-ray pixel detectors

K Mathieson, R Bates, V O'Shea, MS Passmore, M Rahman, KM Smith, J Watt, C Whitehill

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Two simulation packages were used to model the sharing of charge, due to the scattering and diffusion of carriers, between adjacent pixel elements in semiconductors X-ray detectors. The X-ray interaction and the consequent multiple scattering was modelled with the aid of the Monte Carlo package, MCNP. The resultant deposited charge distribution was then used to create the charge cloud profile in the finite element semiconductor simulation code MEDICI. The analysis of the current pulses induced on pixel electrodes for varying photon energies was performed for a GaAs pixel detector. For a pixel pitch of 25 μm, the charge lost to a neighbouring pixel was observed to be constant, at 0.6%, through the energies simulated. Ultimately, a fundamental limit on the pixel element size for imaging and spectroscopic devices may be set due to these key physical principles.
Original languageEnglish
Pages (from-to)191-197
Number of pages7
JournalNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume477
Issue number1-3
DOIs
Publication statusPublished - 21 Jan 2002

Keywords

  • semiconductor X-ray pixel detectors
  • pixel detectors
  • pixel electrodes

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