The scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films

C. Trager-Cowan, A. Alasmari, W. Avis, J. Bruckbauer, P. R. Edwards, B. Hourahine, S. Kraeusel, G. Kusch, R. Johnston, G. Naresh-Kumar, R. W. Martin, M. Nouf-Allehiani, E. Pascal, L. Spasevski, D. Thomson, S. Vespucci, P. J. Parbrook, M. D. Smith, J. Enslin, F. Mehnke & 16 others M. Kneissl, C. Kuhn, T. Wernicke, S. Hagedorn, A. Knauer, V. Kueller, S. Walde, M. Weyers, P.-M. Coulon, P. A. Shields, Y. Zhang, L. Jiu, Yipin Gong, R. M. Smith, T. Wang, A. Winkelmann

Research output: Contribution to journalArticle

Abstract

In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and cathodoluminescence hyperspectral imaging. We present our recent results on the use of these non-destructive techniques to obtain information on the topography, crystal misorientation, defect distributions, composition, doping, and light emission from a range of UV-emitting nitride semiconductor structures. We aim to illustrate the developing capability of each of these techniques for understanding the properties of UV-emitting nitride semiconductors, and the benefits were appropriate, in combining the techniques.
LanguageEnglish
PagesB73-B82
Number of pages10
JournalPhotonics Research
Volume7
Issue number11
DOIs
Publication statusPublished - 30 Oct 2019

Fingerprint

Nitrides
nitrides
Electron microscopes
electron microscopes
Semiconductor materials
Scanning
Thin films
scanning
Cathodoluminescence
Crystal defects
Light emission
thin films
Electron diffraction
Topography
Doping (additives)
cathodoluminescence
Imaging techniques
misalignment
Scanning electron microscopy
light emission

Keywords

  • scanning electron microscopy
  • electron backscatter diffraction
  • non-destructive techniques
  • UV emitting nitride semiconductors

Cite this

Trager-Cowan, C. ; Alasmari, A. ; Avis, W. ; Bruckbauer, J. ; Edwards, P. R. ; Hourahine, B. ; Kraeusel, S. ; Kusch, G. ; Johnston, R. ; Naresh-Kumar, G. ; Martin, R. W. ; Nouf-Allehiani, M. ; Pascal, E. ; Spasevski, L. ; Thomson, D. ; Vespucci, S. ; Parbrook, P. J. ; Smith, M. D. ; Enslin, J. ; Mehnke, F. ; Kneissl, M. ; Kuhn, C. ; Wernicke, T. ; Hagedorn, S. ; Knauer, A. ; Kueller, V. ; Walde, S. ; Weyers, M. ; Coulon, P.-M. ; Shields, P. A. ; Zhang, Y. ; Jiu, L. ; Gong, Yipin ; Smith, R. M. ; Wang, T. ; Winkelmann, A. / The scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films. In: Photonics Research. 2019 ; Vol. 7, No. 11. pp. B73-B82.
@article{0fd5b975bc224742b0144803642d9547,
title = "The scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films",
abstract = "In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and cathodoluminescence hyperspectral imaging. We present our recent results on the use of these non-destructive techniques to obtain information on the topography, crystal misorientation, defect distributions, composition, doping, and light emission from a range of UV-emitting nitride semiconductor structures. We aim to illustrate the developing capability of each of these techniques for understanding the properties of UV-emitting nitride semiconductors, and the benefits were appropriate, in combining the techniques.",
keywords = "scanning electron microscopy, electron backscatter diffraction, non-destructive techniques, UV emitting nitride semiconductors",
author = "C. Trager-Cowan and A. Alasmari and W. Avis and J. Bruckbauer and Edwards, {P. R.} and B. Hourahine and S. Kraeusel and G. Kusch and R. Johnston and G. Naresh-Kumar and Martin, {R. W.} and M. Nouf-Allehiani and E. Pascal and L. Spasevski and D. Thomson and S. Vespucci and Parbrook, {P. J.} and Smith, {M. D.} and J. Enslin and F. Mehnke and M. Kneissl and C. Kuhn and T. Wernicke and S. Hagedorn and A. Knauer and V. Kueller and S. Walde and M. Weyers and P.-M. Coulon and Shields, {P. A.} and Y. Zhang and L. Jiu and Yipin Gong and Smith, {R. M.} and T. Wang and A. Winkelmann",
year = "2019",
month = "10",
day = "30",
doi = "10.1364/PRJ.7.000B73",
language = "English",
volume = "7",
pages = "B73--B82",
journal = "Photonics Research",
issn = "2327-9125",
publisher = "Optical Society of America",
number = "11",

}

Trager-Cowan, C, Alasmari, A, Avis, W, Bruckbauer, J, Edwards, PR, Hourahine, B, Kraeusel, S, Kusch, G, Johnston, R, Naresh-Kumar, G, Martin, RW, Nouf-Allehiani, M, Pascal, E, Spasevski, L, Thomson, D, Vespucci, S, Parbrook, PJ, Smith, MD, Enslin, J, Mehnke, F, Kneissl, M, Kuhn, C, Wernicke, T, Hagedorn, S, Knauer, A, Kueller, V, Walde, S, Weyers, M, Coulon, P-M, Shields, PA, Zhang, Y, Jiu, L, Gong, Y, Smith, RM, Wang, T & Winkelmann, A 2019, 'The scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films' Photonics Research, vol. 7, no. 11, pp. B73-B82. https://doi.org/10.1364/PRJ.7.000B73

The scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films. / Trager-Cowan, C.; Alasmari, A.; Avis, W.; Bruckbauer, J.; Edwards, P. R.; Hourahine, B.; Kraeusel, S.; Kusch, G.; Johnston, R.; Naresh-Kumar, G.; Martin, R. W.; Nouf-Allehiani, M.; Pascal, E.; Spasevski, L.; Thomson, D.; Vespucci, S.; Parbrook, P. J.; Smith, M. D.; Enslin, J.; Mehnke, F.; Kneissl, M.; Kuhn, C.; Wernicke, T.; Hagedorn, S.; Knauer, A.; Kueller, V.; Walde, S.; Weyers, M.; Coulon, P.-M.; Shields, P. A.; Zhang, Y.; Jiu, L.; Gong, Yipin; Smith, R. M.; Wang, T.; Winkelmann, A.

In: Photonics Research, Vol. 7, No. 11, 30.10.2019, p. B73-B82.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films

AU - Trager-Cowan, C.

AU - Alasmari, A.

AU - Avis, W.

AU - Bruckbauer, J.

AU - Edwards, P. R.

AU - Hourahine, B.

AU - Kraeusel, S.

AU - Kusch, G.

AU - Johnston, R.

AU - Naresh-Kumar, G.

AU - Martin, R. W.

AU - Nouf-Allehiani, M.

AU - Pascal, E.

AU - Spasevski, L.

AU - Thomson, D.

AU - Vespucci, S.

AU - Parbrook, P. J.

AU - Smith, M. D.

AU - Enslin, J.

AU - Mehnke, F.

AU - Kneissl, M.

AU - Kuhn, C.

AU - Wernicke, T.

AU - Hagedorn, S.

AU - Knauer, A.

AU - Kueller, V.

AU - Walde, S.

AU - Weyers, M.

AU - Coulon, P.-M.

AU - Shields, P. A.

AU - Zhang, Y.

AU - Jiu, L.

AU - Gong, Yipin

AU - Smith, R. M.

AU - Wang, T.

AU - Winkelmann, A.

PY - 2019/10/30

Y1 - 2019/10/30

N2 - In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and cathodoluminescence hyperspectral imaging. We present our recent results on the use of these non-destructive techniques to obtain information on the topography, crystal misorientation, defect distributions, composition, doping, and light emission from a range of UV-emitting nitride semiconductor structures. We aim to illustrate the developing capability of each of these techniques for understanding the properties of UV-emitting nitride semiconductors, and the benefits were appropriate, in combining the techniques.

AB - In this paper we describe the scanning electron microscopy techniques of electron backscatter diffraction, electron channeling contrast imaging, wavelength dispersive X-ray spectroscopy, and cathodoluminescence hyperspectral imaging. We present our recent results on the use of these non-destructive techniques to obtain information on the topography, crystal misorientation, defect distributions, composition, doping, and light emission from a range of UV-emitting nitride semiconductor structures. We aim to illustrate the developing capability of each of these techniques for understanding the properties of UV-emitting nitride semiconductors, and the benefits were appropriate, in combining the techniques.

KW - scanning electron microscopy

KW - electron backscatter diffraction

KW - non-destructive techniques

KW - UV emitting nitride semiconductors

UR - https://www.osapublishing.org/prj/home.cfm

U2 - 10.1364/PRJ.7.000B73

DO - 10.1364/PRJ.7.000B73

M3 - Article

VL - 7

SP - B73-B82

JO - Photonics Research

T2 - Photonics Research

JF - Photonics Research

SN - 2327-9125

IS - 11

ER -