The optical linewidth of InGaN light emitting diodes

P.G. Middleton, K.P. O'Donnell, T. Breitkopf, H. Kalt, W. Van Der Stricht, I. Moerman, P. Demeester

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A comparative study of the optical linewidths of high-quality InGaN epilayers and commercial single quantum well light emitting diode structures was undertaken using photo- and electroluminescence. Optical linewidths show a linear increase with increasing indium concentration in both cases. We assess the contribution of three mechanisms to the luminescence linewidth: alloy fluctuations, well width fluctuations and strain effects. It is found that the broadening of the emission line is an intrinsic property of InGaN alloys. The piezoelectric effect in wurtzite semiconductors is proposed as a novel line-broadening mechanism.

Original languageEnglish
Pages (from-to)285-288
Number of pages4
JournalMaterials Science and Engineering B
Volume50
Issue number1-3
DOIs
Publication statusPublished - 18 Dec 1997

Fingerprint

Linewidth
Light emitting diodes
light emitting diodes
wurtzite
electroluminescence
indium
Indium
Piezoelectricity
Epilayers
Electroluminescence
quantum wells
luminescence
photoluminescence
Semiconductor quantum wells
Luminescence
Photoluminescence
Semiconductor materials

Keywords

  • light emitting diodes
  • luminescence
  • optical linewidth

Cite this

Middleton, P. G., O'Donnell, K. P., Breitkopf, T., Kalt, H., Van Der Stricht, W., Moerman, I., & Demeester, P. (1997). The optical linewidth of InGaN light emitting diodes. Materials Science and Engineering B, 50(1-3), 285-288. https://doi.org/10.1016/S0921-5107(97)00191-8
Middleton, P.G. ; O'Donnell, K.P. ; Breitkopf, T. ; Kalt, H. ; Van Der Stricht, W. ; Moerman, I. ; Demeester, P. / The optical linewidth of InGaN light emitting diodes. In: Materials Science and Engineering B. 1997 ; Vol. 50, No. 1-3. pp. 285-288.
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Middleton, PG, O'Donnell, KP, Breitkopf, T, Kalt, H, Van Der Stricht, W, Moerman, I & Demeester, P 1997, 'The optical linewidth of InGaN light emitting diodes', Materials Science and Engineering B, vol. 50, no. 1-3, pp. 285-288. https://doi.org/10.1016/S0921-5107(97)00191-8

The optical linewidth of InGaN light emitting diodes. / Middleton, P.G.; O'Donnell, K.P.; Breitkopf, T.; Kalt, H.; Van Der Stricht, W.; Moerman, I.; Demeester, P.

In: Materials Science and Engineering B, Vol. 50, No. 1-3, 18.12.1997, p. 285-288.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The optical linewidth of InGaN light emitting diodes

AU - Middleton, P.G.

AU - O'Donnell, K.P.

AU - Breitkopf, T.

AU - Kalt, H.

AU - Van Der Stricht, W.

AU - Moerman, I.

AU - Demeester, P.

PY - 1997/12/18

Y1 - 1997/12/18

N2 - A comparative study of the optical linewidths of high-quality InGaN epilayers and commercial single quantum well light emitting diode structures was undertaken using photo- and electroluminescence. Optical linewidths show a linear increase with increasing indium concentration in both cases. We assess the contribution of three mechanisms to the luminescence linewidth: alloy fluctuations, well width fluctuations and strain effects. It is found that the broadening of the emission line is an intrinsic property of InGaN alloys. The piezoelectric effect in wurtzite semiconductors is proposed as a novel line-broadening mechanism.

AB - A comparative study of the optical linewidths of high-quality InGaN epilayers and commercial single quantum well light emitting diode structures was undertaken using photo- and electroluminescence. Optical linewidths show a linear increase with increasing indium concentration in both cases. We assess the contribution of three mechanisms to the luminescence linewidth: alloy fluctuations, well width fluctuations and strain effects. It is found that the broadening of the emission line is an intrinsic property of InGaN alloys. The piezoelectric effect in wurtzite semiconductors is proposed as a novel line-broadening mechanism.

KW - light emitting diodes

KW - luminescence

KW - optical linewidth

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Middleton PG, O'Donnell KP, Breitkopf T, Kalt H, Van Der Stricht W, Moerman I et al. The optical linewidth of InGaN light emitting diodes. Materials Science and Engineering B. 1997 Dec 18;50(1-3):285-288. https://doi.org/10.1016/S0921-5107(97)00191-8