The morphology and cathodoluminescence of GaN thin films

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Abstract

In this paper we compare gallium nitride (GaN) films grown by molecular beam epitaxy on sapphire (Al2O3), gallium arsenide (GaAs (111)B) and lithium gallate (LiGaO2) substrates. Atomic force microscopy, scanning electron microscopy, cathodoluminescence imaging and cathodoluminescence spectroscopy are used to characterise the films. From growth runs carried out to date, GaN films on GaAs substrates exhibit the best surface uniformity and the cleanest luminescence.

Original languageEnglish
Article numbere6
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume1
DOIs
Publication statusPublished - 1 Jan 1996

Keywords

  • gallium nitride
  • GaN films
  • sapphire substrates
  • cathodoluminescence spectroscopy

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