The MOCVD growth without prereaction of ZnSe and ZnS layers

P. J. Wright; P. J. Parbrook; B. Cockayne; A. C. Jones; E. D. Orrell; K. P. O'Donnell; B. Henderson

doi:10.1016/0022-0248(89)90019-5

The MOCVD growth without prereaction of ZnSe and ZnS layers

P. J. Wright, P. J. Parbrook, B. Cockayne, A. C. Jones, E. D. Orrell, K. P. O'Donnell, B. Henderson

Physics

Research output: Contribution to journal › Article › peer-review

54 Citations (Scopus)

Abstract

It is shown that the liquid adduct dimethylzinc-triethylamine (Me₂Zn(NEt₃)₂) can be used as the zinc source to grow at low temperatures single crystal layers, principally of ZnSe but also of ZnS, by MOCVD without any significant prereaction of the constituent reactants. The high quality and uniformity of the ZnSe layers produced is demonstrated by a low residual carrier concentration, high mobility, an absence of deep-centre photoluminescence and a narrow width for X-ray rocking curves.

Original language	English
Pages (from-to)	441-447
Number of pages	7
Journal	Journal of Crystal Growth
Volume	94
Issue number	2
DOIs	https://doi.org/10.1016/0022-0248(89)90019-5
Publication status	Published - 1 Feb 1989

Keywords

MOCVD
ZnSe
photoluminescence
X-ray

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10.1016/0022-0248(89)90019-5

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title = "The MOCVD growth without prereaction of ZnSe and ZnS layers",

abstract = "It is shown that the liquid adduct dimethylzinc-triethylamine (Me2Zn(NEt3)2) can be used as the zinc source to grow at low temperatures single crystal layers, principally of ZnSe but also of ZnS, by MOCVD without any significant prereaction of the constituent reactants. The high quality and uniformity of the ZnSe layers produced is demonstrated by a low residual carrier concentration, high mobility, an absence of deep-centre photoluminescence and a narrow width for X-ray rocking curves.",

keywords = "MOCVD, ZnSe, photoluminescence, X-ray",

author = "Wright, {P. J.} and Parbrook, {P. J.} and B. Cockayne and Jones, {A. C.} and Orrell, {E. D.} and O'Donnell, {K. P.} and B. Henderson",

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T1 - The MOCVD growth without prereaction of ZnSe and ZnS layers

AU - Wright, P. J.

AU - Parbrook, P. J.

AU - Cockayne, B.

AU - Jones, A. C.

AU - Orrell, E. D.

AU - O'Donnell, K. P.

AU - Henderson, B.

PY - 1989/2/1

Y1 - 1989/2/1

N2 - It is shown that the liquid adduct dimethylzinc-triethylamine (Me2Zn(NEt3)2) can be used as the zinc source to grow at low temperatures single crystal layers, principally of ZnSe but also of ZnS, by MOCVD without any significant prereaction of the constituent reactants. The high quality and uniformity of the ZnSe layers produced is demonstrated by a low residual carrier concentration, high mobility, an absence of deep-centre photoluminescence and a narrow width for X-ray rocking curves.

AB - It is shown that the liquid adduct dimethylzinc-triethylamine (Me2Zn(NEt3)2) can be used as the zinc source to grow at low temperatures single crystal layers, principally of ZnSe but also of ZnS, by MOCVD without any significant prereaction of the constituent reactants. The high quality and uniformity of the ZnSe layers produced is demonstrated by a low residual carrier concentration, high mobility, an absence of deep-centre photoluminescence and a narrow width for X-ray rocking curves.

KW - MOCVD

KW - ZnSe

KW - photoluminescence

KW - X-ray

UR - http://www.scopus.com/inward/record.url?scp=0024960060&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(89)90019-5

DO - 10.1016/0022-0248(89)90019-5

M3 - Article

AN - SCOPUS:0024960060

VL - 94

SP - 441

EP - 447

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 2

ER -

The MOCVD growth without prereaction of ZnSe and ZnS layers

Abstract

Keywords

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