The MOCVD growth without prereaction of ZnSe and ZnS layers

P. J. Wright, P. J. Parbrook, B. Cockayne, A. C. Jones, E. D. Orrell, K. P. O'Donnell, B. Henderson

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Abstract

It is shown that the liquid adduct dimethylzinc-triethylamine (Me2Zn(NEt3)2) can be used as the zinc source to grow at low temperatures single crystal layers, principally of ZnSe but also of ZnS, by MOCVD without any significant prereaction of the constituent reactants. The high quality and uniformity of the ZnSe layers produced is demonstrated by a low residual carrier concentration, high mobility, an absence of deep-centre photoluminescence and a narrow width for X-ray rocking curves.

Original languageEnglish
Pages (from-to)441-447
Number of pages7
JournalJournal of Crystal Growth
Volume94
Issue number2
DOIs
Publication statusPublished - 1 Feb 1989

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Keywords

  • MOCVD
  • ZnSe
  • photoluminescence
  • X-ray

Cite this

Wright, P. J., Parbrook, P. J., Cockayne, B., Jones, A. C., Orrell, E. D., O'Donnell, K. P., & Henderson, B. (1989). The MOCVD growth without prereaction of ZnSe and ZnS layers. Journal of Crystal Growth, 94(2), 441-447. https://doi.org/10.1016/0022-0248(89)90019-5