The MOCVD growth without prereaction of ZnSe and ZnS layers

P. J. Wright, P. J. Parbrook, B. Cockayne, A. C. Jones, E. D. Orrell, K. P. O'Donnell, B. Henderson

Research output: Contribution to journal › Article

52 Citations (Scopus)

Abstract

It is shown that the liquid adduct dimethylzinc-triethylamine (Me2Zn(NEt3)2) can be used as the zinc source to grow at low temperatures single crystal layers, principally of ZnSe but also of ZnS, by MOCVD without any significant prereaction of the constituent reactants. The high quality and uniformity of the ZnSe layers produced is demonstrated by a low residual carrier concentration, high mobility, an absence of deep-centre photoluminescence and a narrow width for X-ray rocking curves.

LanguageEnglish
Pages441-447
Number of pages7
JournalJournal of Crystal Growth
Volume94
Issue number2
DOIs
Publication statusPublished - 1 Feb 1989

Fingerprint

Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Carrier concentration
Zinc
Photoluminescence
Single crystals
X rays
Liquids
adducts
zinc
photoluminescence
Temperature
single crystals
curves
liquids
x rays
dimethylzinc
triethylamine

Keywords

  • MOCVD
  • ZnSe
  • photoluminescence
  • X-ray

Cite this

Wright, P. J., Parbrook, P. J., Cockayne, B., Jones, A. C., Orrell, E. D., O'Donnell, K. P., & Henderson, B. (1989). The MOCVD growth without prereaction of ZnSe and ZnS layers. Journal of Crystal Growth, 94(2), 441-447. https://doi.org/10.1016/0022-0248(89)90019-5
Wright, P. J. ; Parbrook, P. J. ; Cockayne, B. ; Jones, A. C. ; Orrell, E. D. ; O'Donnell, K. P. ; Henderson, B. / The MOCVD growth without prereaction of ZnSe and ZnS layers. In: Journal of Crystal Growth. 1989 ; Vol. 94, No. 2. pp. 441-447.
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Wright, PJ, Parbrook, PJ, Cockayne, B, Jones, AC, Orrell, ED, O'Donnell, KP & Henderson, B 1989, 'The MOCVD growth without prereaction of ZnSe and ZnS layers' Journal of Crystal Growth, vol. 94, no. 2, pp. 441-447. https://doi.org/10.1016/0022-0248(89)90019-5

The MOCVD growth without prereaction of ZnSe and ZnS layers. / Wright, P. J.; Parbrook, P. J.; Cockayne, B.; Jones, A. C.; Orrell, E. D.; O'Donnell, K. P.; Henderson, B.

In: Journal of Crystal Growth, Vol. 94, No. 2, 01.02.1989, p. 441-447.

Research output: Contribution to journal › Article

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AU - Wright, P. J.

AU - Parbrook, P. J.

AU - Cockayne, B.

AU - Jones, A. C.

AU - Orrell, E. D.

AU - O'Donnell, K. P.

AU - Henderson, B.

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AB - It is shown that the liquid adduct dimethylzinc-triethylamine (Me2Zn(NEt3)2) can be used as the zinc source to grow at low temperatures single crystal layers, principally of ZnSe but also of ZnS, by MOCVD without any significant prereaction of the constituent reactants. The high quality and uniformity of the ZnSe layers produced is demonstrated by a low residual carrier concentration, high mobility, an absence of deep-centre photoluminescence and a narrow width for X-ray rocking curves.

KW - MOCVD

KW - ZnSe

KW - photoluminescence

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Wright PJ, Parbrook PJ, Cockayne B, Jones AC, Orrell ED, O'Donnell KP et al. The MOCVD growth without prereaction of ZnSe and ZnS layers. Journal of Crystal Growth. 1989 Feb 1;94(2):441-447. https://doi.org/10.1016/0022-0248(89)90019-5

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