Abstract
It is shown that the liquid adduct dimethylzinc-triethylamine (Me2Zn(NEt3)2) can be used as the zinc source to grow at low temperatures single crystal layers, principally of ZnSe but also of ZnS, by MOCVD without any significant prereaction of the constituent reactants. The high quality and uniformity of the ZnSe layers produced is demonstrated by a low residual carrier concentration, high mobility, an absence of deep-centre photoluminescence and a narrow width for X-ray rocking curves.
Original language | English |
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Pages (from-to) | 441-447 |
Number of pages | 7 |
Journal | Journal of Crystal Growth |
Volume | 94 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1 Feb 1989 |
Keywords
- MOCVD
- ZnSe
- photoluminescence
- X-ray