The microstructure of Er MBE doped GaN

T. Wojtowicz; P. Ruterana; N. Rousseau; O. Briot; S. Dalmasso; R. W. Martin; K. P. O'Donnell

doi:10.1016/j.mseb.2003.08.027

The microstructure of Er MBE doped GaN

T. Wojtowicz, P. Ruterana, N. Rousseau, O. Briot, S. Dalmasso, R. W. Martin, K. P. O'Donnell

Physics

Research output: Contribution to journal › Conference article › peer-review

4 Citations (Scopus)

Abstract

For a few years now, it has been possible to dope GaN layers using molecular beam epitaxy (MBE) growth. This aims to use the wide band gap semiconductors as hosts to rare earth ions and exploit the sharp emission lines from atomic shell transitions. It was shown that the whole visible spectrum can be covered by addressing different exited states of various rare earth ions. It is also suspected that as in some systems like Si(nano)/SiO₂, the energy coupling could involve defects. In this work, we carry out TEM and HREM analysis on MBE doped GaN layers grown on metal organic chemical vapour deposition (MOCVD) GaN templates. Er concentrations of 1, 6, and 16at.% were subsequently measured by wavelength dispersive X-ray (WDX) in an electron probe. We discuss the results on the spatial distribution of the rare earth atoms at a nanometer scale.

Original language	English
Pages (from-to)	114-117
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	105
Issue number	1-3
DOIs	https://doi.org/10.1016/j.mseb.2003.08.027
Publication status	Published - 15 Dec 2003
Event	EMRS 2003 Symposium J, Rare Earth Doped Materials for Photonic - Strasbourg, Austria Duration: 10 Jun 2003 → 13 Jun 2003

Keywords

Erbium doping
GaN
HREM
MBE
TEM
wide band gap semiconductors

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10.1016/j.mseb.2003.08.027

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@article{08088d2fe81a45afb999eeb95acaea2e,

title = "The microstructure of Er MBE doped GaN",

abstract = "For a few years now, it has been possible to dope GaN layers using molecular beam epitaxy (MBE) growth. This aims to use the wide band gap semiconductors as hosts to rare earth ions and exploit the sharp emission lines from atomic shell transitions. It was shown that the whole visible spectrum can be covered by addressing different exited states of various rare earth ions. It is also suspected that as in some systems like Si(nano)/SiO2, the energy coupling could involve defects. In this work, we carry out TEM and HREM analysis on MBE doped GaN layers grown on metal organic chemical vapour deposition (MOCVD) GaN templates. Er concentrations of 1, 6, and 16at.% were subsequently measured by wavelength dispersive X-ray (WDX) in an electron probe. We discuss the results on the spatial distribution of the rare earth atoms at a nanometer scale.",

keywords = "Erbium doping, GaN, HREM, MBE, TEM, wide band gap semiconductors",

author = "T. Wojtowicz and P. Ruterana and N. Rousseau and O. Briot and S. Dalmasso and Martin, {R. W.} and O'Donnell, {K. P.}",

year = "2003",

month = dec,

day = "15",

doi = "10.1016/j.mseb.2003.08.027",

language = "English",

volume = "105",

pages = "114--117",

journal = "Materials Science and Engineering B",

issn = "0921-5107",

number = "1-3",

note = "EMRS 2003 Symposium J, Rare Earth Doped Materials for Photonic ; Conference date: 10-06-2003 Through 13-06-2003",

}

TY - JOUR

T1 - The microstructure of Er MBE doped GaN

AU - Wojtowicz, T.

AU - Ruterana, P.

AU - Rousseau, N.

AU - Briot, O.

AU - Dalmasso, S.

AU - Martin, R. W.

AU - O'Donnell, K. P.

PY - 2003/12/15

Y1 - 2003/12/15

N2 - For a few years now, it has been possible to dope GaN layers using molecular beam epitaxy (MBE) growth. This aims to use the wide band gap semiconductors as hosts to rare earth ions and exploit the sharp emission lines from atomic shell transitions. It was shown that the whole visible spectrum can be covered by addressing different exited states of various rare earth ions. It is also suspected that as in some systems like Si(nano)/SiO2, the energy coupling could involve defects. In this work, we carry out TEM and HREM analysis on MBE doped GaN layers grown on metal organic chemical vapour deposition (MOCVD) GaN templates. Er concentrations of 1, 6, and 16at.% were subsequently measured by wavelength dispersive X-ray (WDX) in an electron probe. We discuss the results on the spatial distribution of the rare earth atoms at a nanometer scale.

AB - For a few years now, it has been possible to dope GaN layers using molecular beam epitaxy (MBE) growth. This aims to use the wide band gap semiconductors as hosts to rare earth ions and exploit the sharp emission lines from atomic shell transitions. It was shown that the whole visible spectrum can be covered by addressing different exited states of various rare earth ions. It is also suspected that as in some systems like Si(nano)/SiO2, the energy coupling could involve defects. In this work, we carry out TEM and HREM analysis on MBE doped GaN layers grown on metal organic chemical vapour deposition (MOCVD) GaN templates. Er concentrations of 1, 6, and 16at.% were subsequently measured by wavelength dispersive X-ray (WDX) in an electron probe. We discuss the results on the spatial distribution of the rare earth atoms at a nanometer scale.

KW - Erbium doping

KW - GaN

KW - HREM

KW - MBE

KW - TEM

KW - wide band gap semiconductors

UR - http://www.scopus.com/inward/record.url?scp=0344444340&partnerID=8YFLogxK

U2 - 10.1016/j.mseb.2003.08.027

DO - 10.1016/j.mseb.2003.08.027

M3 - Conference article

AN - SCOPUS:0344444340

VL - 105

SP - 114

EP - 117

JO - Materials Science and Engineering B

JF - Materials Science and Engineering B

SN - 0921-5107

IS - 1-3

T2 - EMRS 2003 Symposium J, Rare Earth Doped Materials for Photonic

Y2 - 10 June 2003 through 13 June 2003

ER -

The microstructure of Er MBE doped GaN

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Keywords

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