The microstructure of Er MBE doped GaN

T. Wojtowicz, P. Ruterana, N. Rousseau, O. Briot, S. Dalmasso, R. W. Martin, K. P. O'Donnell

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)


For a few years now, it has been possible to dope GaN layers using molecular beam epitaxy (MBE) growth. This aims to use the wide band gap semiconductors as hosts to rare earth ions and exploit the sharp emission lines from atomic shell transitions. It was shown that the whole visible spectrum can be covered by addressing different exited states of various rare earth ions. It is also suspected that as in some systems like Si(nano)/SiO2, the energy coupling could involve defects. In this work, we carry out TEM and HREM analysis on MBE doped GaN layers grown on metal organic chemical vapour deposition (MOCVD) GaN templates. Er concentrations of 1, 6, and 16at.% were subsequently measured by wavelength dispersive X-ray (WDX) in an electron probe. We discuss the results on the spatial distribution of the rare earth atoms at a nanometer scale.

Original languageEnglish
Pages (from-to)114-117
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Issue number1-3
Publication statusPublished - 15 Dec 2003
EventEMRS 2003 Symposium J, Rare Earth Doped Materials for Photonic - Strasbourg, Austria
Duration: 10 Jun 200313 Jun 2003


  • Erbium doping
  • GaN
  • HREM
  • MBE
  • TEM
  • wide band gap semiconductors


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