The influence of threading dislocations propagating through an AlGaN UVC LED

Douglas Cameron; Paul R. Edwards; Frank Mehnke; Gunnar Kusch; Luca Sulmoni; Marcel Schilling; Tim Wernicke; Michael Kneissl; Robert W. Martin

doi:10.1063/5.0086034

The influence of threading dislocations propagating through an AlGaN UVC LED

Douglas Cameron, Paul R. Edwards, Frank Mehnke, Gunnar Kusch, Luca Sulmoni, Marcel Schilling, Tim Wernicke, Michael Kneissl, Robert W. Martin

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

56 Downloads (Pure)

Abstract

During the epitaxy of AlGaN on sapphire for deep UV emitters, significant lattice mismatch leads to highly strained heterojunctions and the formation of threading dislocations. Combining cathodoluminescence, electron beam induced current and x-ray microanalysis reveal that dislocations with a screw component permeate through a state-of-the-art UVC LED heterostructure into the active region and perturb their local environment in each layer as growth progresses. In addition to acting as non-radiative recombination centers, these dislocations encourage high point defect densities and three-dimensional growth within their vicinity. We find that these point defects can add parasitic recombination pathways and compensate intentional dopants.

Original language	English
Article number	162101
Number of pages	4
Journal	Applied Physics Letters
Volume	120
Issue number	16
DOIs	https://doi.org/10.1063/5.0086034
Publication status	Published - 18 Apr 2022

Keywords

electron beam-induced current (EBIC)
cathodoluminescence (CL)
WDX
AlGaN
light emitting diode (LED)
scanning electron microscopy (SEM)

Access to Document

10.1063/5.0086034Licence: CC BY 4.0

Cameron-etal-APL-2022-The-influence-of-threading-dislocations-propagating-through-an-AlGaN-UVC-LEDFinal published version, 4.54 MBLicence: CC BY 4.0

'Hetero-print': A holistic approach to transfer-printing for heterogeneous integration in manufacturing
Dawson, M. (Principal Investigator), Martin, R. (Co-investigator), Strain, M. (Co-investigator), Watson, I. (Co-investigator) & Guilhabert, B. J. E. (Research Co-investigator)
EPSRC (Engineering and Physical Sciences Research Council)
1/06/18 → 31/05/24
Project: Research
University Of Strathclyde - Equipment Account
Gachagan, A. (Principal Investigator), He, W. (Principal Investigator), Jaroszynski, D. (Principal Investigator), Martin, R. (Principal Investigator), McArthur, S. (Principal Investigator), McArthur, S. (Principal Investigator), Connolly, P. (Co-investigator), Edwards, P. (Co-investigator), Faulds, K. (Co-investigator), Florence, A. (Co-investigator), Graham, D. (Co-investigator), Leithead, B. (Co-investigator), Sefcik, J. (Co-investigator), Ter Horst, J. (Co-investigator), Trager-Cowan, C. (Co-investigator), Uttamchandani, D. (Co-investigator) & Wark, A. (Co-investigator)
EPSRC (Engineering and Physical Sciences Research Council)
1/08/13 → 28/02/23
Project: Research

Electron beam-induced current, cathdodoluminescence and X-ray microanalysis measurements of AlGaN UVC LEDs
Cameron, D. (Creator), Edwards, P. (Creator) & Martin, R. (Creator), University of Strathclyde, 7 Apr 2022
DOI: 10.15129/333c40b0-bb43-48ce-8e9c-af420ef684d7
Dataset

ESEM Quanta 250
Martin, R.
Physics
Facility/equipment: Equipment

Cite this

@article{b9db4a506cb1407f88237ce0626fe2d9,

title = "The influence of threading dislocations propagating through an AlGaN UVC LED",

abstract = "During the epitaxy of AlGaN on sapphire for deep UV emitters, significant lattice mismatch leads to highly strained heterojunctions and the formation of threading dislocations. Combining cathodoluminescence, electron beam induced current and x-ray microanalysis reveal that dislocations with a screw component permeate through a state-of-the-art UVC LED heterostructure into the active region and perturb their local environment in each layer as growth progresses. In addition to acting as non-radiative recombination centers, these dislocations encourage high point defect densities and three-dimensional growth within their vicinity. We find that these point defects can add parasitic recombination pathways and compensate intentional dopants.",

keywords = "electron beam-induced current (EBIC), cathodoluminescence (CL), WDX, AlGaN, light emitting diode (LED), scanning electron microscopy (SEM)",

author = "Douglas Cameron and Edwards, {Paul R.} and Frank Mehnke and Gunnar Kusch and Luca Sulmoni and Marcel Schilling and Tim Wernicke and Michael Kneissl and Martin, {Robert W.}",

year = "2022",

month = apr,

day = "18",

doi = "10.1063/5.0086034",

language = "English",

volume = "120",

journal = "Applied Physics Letters",

issn = "0003-6951",

number = "16",

}

TY - JOUR

T1 - The influence of threading dislocations propagating through an AlGaN UVC LED

AU - Cameron, Douglas

AU - Edwards, Paul R.

AU - Mehnke, Frank

AU - Kusch, Gunnar

AU - Sulmoni, Luca

AU - Schilling, Marcel

AU - Wernicke, Tim

AU - Kneissl, Michael

AU - Martin, Robert W.

PY - 2022/4/18

Y1 - 2022/4/18

N2 - During the epitaxy of AlGaN on sapphire for deep UV emitters, significant lattice mismatch leads to highly strained heterojunctions and the formation of threading dislocations. Combining cathodoluminescence, electron beam induced current and x-ray microanalysis reveal that dislocations with a screw component permeate through a state-of-the-art UVC LED heterostructure into the active region and perturb their local environment in each layer as growth progresses. In addition to acting as non-radiative recombination centers, these dislocations encourage high point defect densities and three-dimensional growth within their vicinity. We find that these point defects can add parasitic recombination pathways and compensate intentional dopants.

AB - During the epitaxy of AlGaN on sapphire for deep UV emitters, significant lattice mismatch leads to highly strained heterojunctions and the formation of threading dislocations. Combining cathodoluminescence, electron beam induced current and x-ray microanalysis reveal that dislocations with a screw component permeate through a state-of-the-art UVC LED heterostructure into the active region and perturb their local environment in each layer as growth progresses. In addition to acting as non-radiative recombination centers, these dislocations encourage high point defect densities and three-dimensional growth within their vicinity. We find that these point defects can add parasitic recombination pathways and compensate intentional dopants.

KW - electron beam-induced current (EBIC)

KW - cathodoluminescence (CL)

KW - WDX

KW - AlGaN

KW - light emitting diode (LED)

KW - scanning electron microscopy (SEM)

U2 - 10.1063/5.0086034

DO - 10.1063/5.0086034

M3 - Article

SN - 0003-6951

VL - 120

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 162101

ER -

The influence of threading dislocations propagating through an AlGaN UVC LED

Abstract

Keywords

Access to Document

Fingerprint

Projects

'Hetero-print': A holistic approach to transfer-printing for heterogeneous integration in manufacturing

University Of Strathclyde - Equipment Account

Datasets

Electron beam-induced current, cathdodoluminescence and X-ray microanalysis measurements of AlGaN UVC LEDs

Equipment

ESEM Quanta 250

Cite this