Projects per year
During the epitaxy of AlGaN on sapphire for deep UV emitters, significant lattice mismatch leads to highly strained heterojunctions and the formation of threading dislocations. Combining cathodoluminescence, electron beam induced current and x-ray microanalysis reveal that dislocations with a screw component permeate through a state-of-the-art UVC LED heterostructure into the active region and perturb their local environment in each layer as growth progresses. In addition to acting as non-radiative recombination centers, these dislocations encourage high point defect densities and three-dimensional growth within their vicinity. We find that these point defects can add parasitic recombination pathways and compensate intentional dopants.
|Number of pages||4|
|Journal||Applied Physics Letters|
|Publication status||Published - 18 Apr 2022|
- electron beam-induced current (EBIC)
- cathodoluminescence (CL)
- light emitting diode (LED)
- scanning electron microscopy (SEM)
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University Of Strathclyde - Equipment Account
Gachagan, A., He, W., Jaroszynski, D., Martin, R., McArthur, S., McArthur, S., Connolly, P., Edwards, P., Faulds, K., Florence, A., Graham, D., Leithead, B., Sefcik, J., Ter Horst, J., Trager-Cowan, C., Uttamchandani, D. & Wark, A.
EPSRC (Engineering and Physical Sciences Research Council)
1/08/13 → 28/02/23
Electron beam-induced current, cathdodoluminescence and X-ray microanalysis measurements of AlGaN UVC LEDs
Cameron, D. (Creator), Edwards, P. (Creator) & Martin, R. (Creator), University of Strathclyde, 7 Apr 2022