The influence of threading dislocations propagating through an AlGaN UVC LED

Douglas Cameron, Paul R. Edwards, Frank Mehnke, Gunnar Kusch, Luca Sulmoni, Marcel Schilling, Tim Wernicke, Michael Kneissl, Robert W. Martin

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)
50 Downloads (Pure)


During the epitaxy of AlGaN on sapphire for deep UV emitters, significant lattice mismatch leads to highly strained heterojunctions and the formation of threading dislocations. Combining cathodoluminescence, electron beam induced current and x-ray microanalysis reveal that dislocations with a screw component permeate through a state-of-the-art UVC LED heterostructure into the active region and perturb their local environment in each layer as growth progresses. In addition to acting as non-radiative recombination centers, these dislocations encourage high point defect densities and three-dimensional growth within their vicinity. We find that these point defects can add parasitic recombination pathways and compensate intentional dopants.
Original languageEnglish
Article number162101
Number of pages4
JournalApplied Physics Letters
Issue number16
Publication statusPublished - 18 Apr 2022


  • electron beam-induced current (EBIC)
  • cathodoluminescence (CL)
  • WDX
  • AlGaN
  • light emitting diode (LED)
  • scanning electron microscopy (SEM)


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